An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes a semiconductor layer sequence having a bottom face and a top face, wherein the semiconductor layer sequence comprises a first layer of a first conductivity type, an active layer for generating electromagnetic radiation, and a second layer of a second conductivity type and a bottom contact element located at the bottom face and a top contact element located at the top face for injecting current into the semiconductor layer sequence. The chip further includes a current distribution element located at the bottom face, the current distribution element distributes current along the bottom face during operation and a plurality of vias extending from the current distribution element through the first layer and through the active layer into the semiconductor layer sequence, wherein the vias are not in direct electrical contact with the active layer.

In a light-emitting diode, a plurality of dot-shaped ohmic contact electrodes are provided between a metal reflective film and a compound semiconductor layer, an ohmic electrode and a surface electrode composed of a pad portion and a plurality of linear portions connected to the pad portion are provided in that order on the opposite side of the compound semiconductor layer from the semiconductor substrate, the surface of the ohmic electrode is covered with the linear portions, the ohmic contact electrodes and the ohmic electrode are formed in positions that do not overlap with the pad portion in plan view, and among the plurality of ohmic contact electrodes, 5% or more and 40% or less of the ohmic contact electrodes are disposed in positions that overlap with the linear portions in plan view.

A light-emitting diode, a method of manufacturing the same, a lamp and an illumination device. A light-emitting diode (100) is provided with a compound semiconductor layer (10) including a light-emitting layer (24) provided on a substrate (1); an ohmic contact electrode (7) provided between the substrate and compound semiconductor layer; an ohmic electrode (11) provided on the side of the compound semiconductor layer opposite the substrate; a surface electrode (12) including a branch section (12b) provided so as to cover the surface of the ohmic electrode and a pad section (12a) coupled to the branch section; and a current-blocking portion (13) provided between an under-pad light-emitting layer (24a) arranged in an area of the light-emitting layer that overlaps the pad section (12a) and a light-emitting layer arranged in an area except the area that overlaps the pad section, to prevent current from being supplied to the under-pad light-emitting layer.

The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.

A side-view type light emitting device having a bottom surface thereof as a light emission surface and one side surface thereof as amounting surface for mounting on amounting substrate includes a stacked semiconductor layer having a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked in that order from a side of the bottom surface; a first connecting electrode exposed from the one side surface and electrically connected to the first semiconductor layer; a metal wire having one end thereof electrically connected to an upper surface of the second semiconductor layer; a second connecting electrode exposed from the one side surface and electrically connected to the other end of the metal wire; and a resin layer which covers at least a part of each of the first semiconductor layer, the second semiconductor layer, the first connecting electrode, the second connecting electrode and the metal wire and which is configured to form an upper surface and side surfaces of the light emitting device.

A light emitting device can include a substrate including first and second surfaces, the substrate having a thickness of less than 350 micrometers; a reflective layer on the second surface of the substrate; a light emitting structure on the first surface of the substrate and including first and second semiconductor layers with an active layer therebetween, the second semiconductor layer includes an aluminum-gallium-nitride layer, and the active layer includes aluminum and indium and has a multiple quantum well layer; a transparent conductive layer disposed on the second semiconductor layer and including an indium-tin-oxide; a first electrode on the first semiconductor layer and including multiple layers; a second electrode on the transparent conductive layer and including multiple layers; first and second pads on the first and second electrodes, respectively, in which the second pad includes the same material as the first pad and has a thickness of more than 500 nanometers.

Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a non-conductive reflective film which is formed on the plurality of semiconductor layers; and first and second electrodes formed on the non-conductive reflective film, wherein a spacing between the first electrode and the second electrode is 80 m or greater, and a ratio of a combined area of the first and second electrodes to a planform area of the semiconductor light emitting device as seen on a top view is 0.7:1 or less.

A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor structure. A filler material can penetrate at least some of the plurality of pores and directly contact the surface of the semiconductor structure. In an illustrative embodiment, multiple types of filler material at least partially fill the pores of the aluminum oxide layer.

A method of manufacturing a light-emitting element includes forming a light-transmissive insulating film on a portion of an upper surface of a semiconductor layered body; forming a first light-transmissive electrode to continuously cover the upper surface of the semiconductor layered body and an upper surface of the light-transmissive insulating film; heat-treating the first light-transmissive electrode, and subsequently forming a metal film in at least a portion of a region above the light-transmissive insulating film; forming a second light-transmissive electrode to continuously cover an upper surface of the metal film and an upper surface of the first light-transmissive electrode, the second light-transmissive electrode being electrically connected to the first light-transmissive electrode; and forming a pad electrode in a region where the metal film is disposed in a top view, such that at least a portion of the pad electrode is in contact with an upper surface of the second light-transmissive electrode.

Solid state lighting (SSL) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.