The optical assembly disclosed in the embodiment of the invention includes: a lighting module having a resin layer and a light emitting device inside the resin layer, and having an exit surface for emitting surface light to one side; a reflective portion having a recess in a lower portion of the exit side of the lighting module and an aspherical curved surface at the bottom of the recess; and a transparent cover on the recess to reflect the surface light to a set region.

A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

An electronic device includes a first substrate, a second substrate, a circuit layer, a diode element, and a conductive wire. The first substrate has a first surface, a second surface opposite to the first surface, and a first side surface connected between the first surface and the second surface. The second substrate has a third surface, a fourth surface opposite to the third surface, and a second side surface connected between the third surface and the fourth surface, wherein the fourth surface is disposed away from the first surface. The circuit layer and the diode element are disposed on the first surface. The diode element and the conductive wire are electrically connected to the circuit layer. A first portion of the conductive wire is disposed on the first side surface, and a second portion of the conductive wire is disposed on the second side surface.

A semiconductor device includes a semiconductor stack, an insulating structure, a metal oxide structure and a metal structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active structure located between the first semiconductor structure and the second semiconductor structure. The insulating structure is disposed below the first semiconductor structure and comprising a first opening and a second opening. The metal oxide structure is disposed below the insulating structure and located in the first opening, and contacts the semiconductor stack to form a first contact surface therebetween. The metal structure is located in the second opening, and contacts the semiconductor stack to form a second contact surface therebetween. The first contact surface is separated from the second contact surface.

The invention provides a light generating system (1000) configured to generate system light (1001), wherein the light generating system (1000) comprises a first light generating device (110), wherein: (A) the first light generating device (110) comprises a first light source (10) and a first luminescent converter (210); (B) the first light source (10) comprises a solid state light source, wherein the first light source (10) is configured to generate first light source light (11) having a first light source centroid wavelength (.sub.S, 1) selected from the range of 380-420 nm; (C) the first luminescent converter (210) is configured to convert at least part of the first light source light (11) into first converter light (211) having a first converter centroid wavelength (.sub.c, 1) selected from the green-yellow wavelength range; (D) the first light generating device (110) is configured to generate first device light (111) having a spectral power distribution in the wavelength range of 380-780 nm with at least 60% of the spectral power provided by the first light source light (11) and at maximum 40% of the spectral power provided by the first converter light (211).

Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.

A light emitting diode is provided having a LED layer configured to emit pump light having a pump light wavelength from a light emitting surface, the LED layer comprising a plurality of Group III-nitride layers. A container layer is provided on the light emitting surface of the LED layer, the container surface including an opening defining a container volume through the container layer to the light emitting surface of the LED layer. A colour converting layer is provided in the container volume, the colour converting Got layer configured to absorb pump light and emit converted light of a converted light wavelength longer than the pump light wavelength. A lens is provided on the container surface over the opening, the lens having a convex surface on an opposite side of the lens to the colour converting layer. A pump light reflector laminate provided over the convex surface of the lens the pump light reflector laminate having a stop-band configured to reflect the pump light centred on a first wavelength.

A light emitting diode is provided having a LED layer configured to emit pump light having a pump light wavelength from a light emitting surface, the LED layer comprising a plurality of Group III-nitride layers. A container layer is provided on the light emitting surface of the LED layer, the container surface including an opening defining a container volume through the container layer to the light emitting surface of the LED layer. A colour converting layer is provided in the container volume, the colour converting Got layer configured to absorb pump light and emit converted light of a converted light wavelength longer than the pump light wavelength. A lens is provided on the container surface over the opening, the lens having a convex surface on an opposite side of the lens to the colour converting layer. A pump light reflector laminate provided over the convex surface of the lens the pump light reflector laminate having a stop-band configured to reflect the pump light centred on a first wavelength.

In some examples, an article comprises a semiconductor including at least one integrated circuit, a LED array on a first surface of the semiconductor, and a fill material disposed on a first edge of the semiconductor. The first edge of the LED array or the semiconductor is oriented substantially perpendicular to the first surface of the semiconductor.

A semiconductor light emitting device that is excellent in radiating heat and that can be molded into a sealing shape having intended optical characteristics by die molding is provided. The semiconductor light emitting device includes: a lead frame including a plate-like semiconductor light emitting element mounting portion having an LED chip mounted on a main surface, and a plate-like metal wire connecting portion extending over a same plane as the semiconductor light emitting element mounting portion; a metal wire electrically connecting the LED chip and the metal wire connecting portion; a thermosetting resin molded by die molding or dam-sheet molding so as to completely cover the LED chip and the metal wire; and a resin portion provided to surround the lead frame and having the thickness not greater than the thickness of the lead frame.