A display device includes a stage, a bonding unit disposed on the stage and comprising a position detection sensor, a resin supply unit, and a light irradiation unit, and a fixing unit disposed closer to the stage than the bonding unit is to fix a target member. Embodiments align a display module such that a first side edge of the display module is disposed under the bonding unit. Embodiments move the position detection sensor along the first side edge of the display module to sense a first coating path; move the resin supply unit along the sensed first coating path to coat a first filling agent between the window and the display panel; and move the light irradiation unit along the sensed first coating path to cure the coated first filling agent to form a first filling layer.

A unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, and an optical layer disposed between the light emitting devices and the transparent substrate and transmitting light emitted from the light emitting devices. The transparent substrate has a concavo-convex pattern on a surface facing the light emitting devices.

In an embodiment an optoelectronic component includes a carrier, an optoelectronic semiconductor chip and an encapsulation, wherein the semiconductor chip is fixed on a mounting surface of the carrier and is electrically conductively connected with the carrier, wherein the encapsulation is located around the semiconductor chip and covers the mounting surface at least partially, wherein the encapsulation includes a first layer and a second layer, wherein the first layer is arranged between the mounting surface and the second layer, wherein each of the first layer and the second layer is based on a silicone, and wherein the first layer and the second layer are directly adjacent to each other in a region of an interface.

In an embodiment an optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a radiation exit surface and side surfaces running transversely with respect to the radiation exit surface, the optoelectronic semiconductor chip configured to emit primary radiation through the radiation exit surface, a conversion element arranged on the radiation exit surface, the conversion element configured to convert at least part of the primary radiation into secondary radiation and including a stack of at least two conversion layers and a reflective element laterally surrounding the optoelectronic semiconductor chip, wherein a lateral extent of the conversion layers decreases from a layer which is closest to the radiation exit surface to a layer which is most distant from the radiation exit surface, wherein the conversion element includes a part laterally extending beyond the radiation exit surface and being concavely curved, wherein the conversion element is partly arranged on the reflective element, and wherein the conversion element is arranged on a concavely curved surface of the reflective element.

A display device includes an active area and a peripheral area adjacent to the active area, the display device including: a base layer; and a backplane structure including a backplane layer on the base layer, an outer via layer on the backplane layer, and an outer protective layer on the outer via layer, wherein the outer protective layer includes a first outer protective layer having holes exposing the outer via layer in the active area, and a second outer protective layer having a plurality of trenches recessed toward the outer via layer without exposing the outer via layer in the peripheral area.

Light emitting assemblies comprise a plurality of Light Emitting Diode (LED) dies arranged and attached to common substrate to form an LED array having a desired optimum packing density. The LED dies are wired to one another and are attached to landing pads on the substrate for receiving power from an external electrical source via an interconnect device. The assembly comprises a lens structure, wherein each LED die comprises an optical lens disposed thereover that is configured to promote optimal light transmission. Each optical lens has a diameter that is between about 1.5 to 3 times the size of a respective LED die, and is shaped in the form of a hemisphere. Fillet segments are integral with and interposed between the adjacent optical lenses, and provide sufficient space between adjacent optical lenses so that the diameters of adjacent optical lenses do not intersect with one another.

A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

A display device includes a circuit substrate and at least one light emitting diode (LED) packaging structure electrically connected to the circuit substrate. Each of the at least one LED packaging structure includes a plurality of LEDs, a plurality of transparent packaging structures, a molding layer, a redistribution structure and a common electrode. Each LED includes a first electrode, a semiconductor stack structure and a second electrode stacked with each other. The transparent packaging structures respectively surround the LEDs. The molding layer surrounds the transparent packaging structures. The redistribution structure is located on a first side of the molding layer and is electrically connected to the first electrodes of the LEDs. The common electrode is located on a second side of the molding layer and is electrically connected to the second electrodes of the LEDs.

A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.

A display panel, a tiled display panel and a manufacturing method of display panel are provided. The display panel includes a substrate; a light-shielding layer disposed on the substrate and provided with a plurality of through-holes; a transparent insulation layer including transparent portions arranged in the through-holes respectively; a light-emitting layer disposed on the transparent insulation layer, wherein the light-emitting layer includes a plurality of light-emitting diode (LED) chips are disposed to the plurality of through-holes in a one-to-one correspondence, and a light-emitting surface the LED chip faces to the transparent portion; a device array layer disposed on the light-shielding layer and including a driver and a plurality of metal wirings used to connect the LED chips with the driver; and a sealing layer disposed on the substrate and encapsulating the light-shielding layer, the transparent insulation layer, the light-emitting layer, and the device array layer.