An electronic device is provided, which comprises: a substrate comprising an active region and a peripheral region; a common conductive line disposed corresponding to the peripheral region of the substrate; and a scan line disposed on the substrate, wherein the scan line is electrically connected to a first static discharge conductive line through a first electrostatic protection circuit in the peripheral region, wherein the common conductive line is electrically separated from the first static discharge conductive line; wherein in a top view of the substrate, there is a first distance between the common conductive line and the first static discharge conductive line, and the first distance is greater than or equal to 1.5 m and less than or equal to 12 mm.

Methods and devices for wired charging and communication with a wearable device are described. In one embodiment, a symmetrical contact interface comprises a first contact pad and a second contact pad, and particular wired circuitry is coupled to the first and second contact pads to enable charging as well as receive and transmit communications via the contact pads as part of various device states.

An embodiment includes a tie-off circuit includes multiple field effect transistors (FETs), and a node isolation circuit that is connected to a first output node and a second output node of the tie-off circuit. The node isolation circuit consists of a first FET with a third output node and a second FET with a fourth output node. The second output node includes a logical LO node and is coupled to a gate of the first FET and generates a TIE HI output.

A circuit structure is provided. The circuit structure includes first pfet device. The circuit structure further includes a first nfet device connected to the pfet device. The circuit structure further includes a keeper nfet device that reduces stress associated with the first nfet device by keeping the first nfet device off during its functional state. The circuit structure further includes a keeper pfet device that reduces stress associated with the first pfet device by keeping the first pfet device off during its functional state.

A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are provided for isolation between multi-channel VTVS. Trench gates are also provided for increasing the capacitance of VTVS with integrated EMI filter.

An electrostatic discharge (ESD) protection circuit includes an input terminal, a transistor, and an output terminal. The input terminal is configured to receive an input signal. The transistor includes a first source/drain region, a second source/drain region, and a drift region that has a resistance in series between the first and second source/drain regions and that is configured to attenuate an ESD voltage in the input signal. The output terminal is connected to the second source/drain region.

An integrated circuit device includes at least two epitaxially grown active regions grown onto a substrate, the active regions being placed between a first gate device and a second gate device. The integrated circuit device includes at least one dummy gate between the two epitaxially grown active regions and between the first gate device and the second gate device, wherein each active region is substantially uniform in length. The first gate device and the second device are formed over a first well having a first conductivity type and the dummy gate is formed over a second well having a second conductivity type.

A device is disclosed that includes a first transistor, a second transistor, and a first PODE device. The second transistor is electrically coupled to the first transistor. The first PODE device is adjacent to a drain/source region of the second transistor. A control end of the first PODE device is electrically coupled to a drain/source end of the second transistor.

In accordance with an embodiment, semiconductor component having a compound semiconductor material based semiconductor device connected to a silicon based semiconductor device and a protection element, wherein the silicon based semiconductor device is a transistor. The protection element is coupled in parallel across the silicon based semiconductor device and may be a resistor, a diode, or a transistor. In accordance with another embodiment, the silicon based semiconductor device is a diode. The compound semiconductor material may be shorted to a source of potential such as, for example, ground, with a shorting element.

An array substrate, an electro-static discharge method thereof and a display device are disclosed. The array substrate includes: a plurality of data lines, a plurality of gate lines, a power signal line, a charge release signal line, a plurality of electro-static discharge units and at least one short circuit ring unit. The charge release signal line and the power signal line are disposed in parallel, two electro-static discharge units are disposed between them to form an electro-static discharge circuit, each gate line and/or each data line is connected with the charge release signal line by one electro-static discharge unit; the short circuit ring unit is connected between the charge release signal line and the power signal line.