A manufacturing method for a substrate for an LCD panel includes providing a substrate, and applying photoresist techniques to form a first wiring layer on the substrate and patterning the first wiring layer to form a first laminating layer. An insulating layer and a semiconductor film are also formed and the semiconductor film is patterned to form a second laminating layer. A second wiring layer is formed and patterned to create a third laminating layer, a passivation layer, and a conductive film, and the conductive film is patterned to form a pixel electrode and a fourth laminating layer. The first, second, third, and fourth laminating layers stack together to form the necessary spacer. A color filter substrate with a constant gap is held between the insulating layer and the first laminating layer, and between the passivation layer and the third laminating layer.

A method for manufacturing an array substrate which includes: depositing a gate metal film on a base substrate, and forming a first pattern including the gate electrode by a first patterning process; depositing a gate insulating film, a first transparent conductive film, a source/drain metal film and a doped a-Si film sequentially, and forming a second pattern including the pixel electrode, the source electrode, the drain electrode and a doped semiconductor layer by a second patterning process; depositing an a-Si film, and forming a third pattern including a TFT channel, the semiconductor layer and a gate insulating layer via-hole by a third patterning process; depositing a passivation layer film, and forming a fourth pattern including a passivation layer via-hole by a fourth patterning process, the passivation layer via-hole being arranged at a position corresponding to the gate insulating layer via-hole; and depositing a second transparent conductive film on the base substrate with the fourth pattern, and forming a fifth pattern including an electrical connector by a fifth patterning process.

Disclosed are a manufacturing method of a dual gate TFT substrate and a structure thereof. The manufacturing method of a dual gate TFT substrate includes sequentially manufacturing a bottom gate, a first isolation layer, an island shaped semiconductor layer, and a second isolation layer on a substrate; then, depositing a second metal layer, and implementing a patterning process to the second metal layer with one mask to form a source, a drain and a top gate at the same time; and then, sequentially manufacturing a third isolation layer and a pixel electrode. It can promote the stability of the TFT, reduce the amount of the masks, and shorten the process flow, simplifying the manufacture process and diminishing the production cost. In the structure of the dual gate TFT substrate, the structure is simple, and the stability of the TFT is better, and easy to manufacture.

Disclosed is a display device and a method of manufacturing the display device. The display device includes a pixel electrode disposed in an opening area; a common electrode having at least one region that overlaps the pixel electrode in the opening area; a gate line extending along a row direction in a non-opening area that surrounds the opening area; a data line extending along the non-opening area in a column direction that is perpendicular to the row direction; and a touch sensing line extending in the column direction across the opening area, wherein the opening area may have a shape in which a length of the opening area in the row direction is longer than a length of the opening area in the column direction.

A liquid crystal display (LCD) device capable of preventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.

The present disclosure provides an array substrate, including: a plurality of gate lines and a plurality of data lines intersecting with one another for defining a plurality of pixel regions, each pixel region including two pixel units, each pixel unit including a pixel electrode; and a common electrode line and a pixel electrode line, the pixel electrode line being electrically connected to the pixel electrode. The common electrode line and at least one pixel electrode line form at least an overlapping area for forming at least one storing capacitor there-between.

A semiconductor device in which parasitic capacitance is reduced is provided. A first oxide insulating layer and a first oxide semiconductor layer are sequentially formed over a first insulating layer. A first conductive layer is formed over the first oxide semiconductor layer and etched to form a second conductive layer. The first oxide insulating layer and the first oxide semiconductor layer are etched with the second conductive layer as a mask to form a second oxide insulating layer and a second oxide semiconductor layer. A planarized insulating layer is formed over the first insulating layer and the second conductive layer. A second insulating layer, a source electrode layer, and a drain electrode layer are formed by etching the planarized insulating layer and the second conductive layer. A third oxide insulating layer, a gate insulating layer, and a gate electrode layer are formed over the second oxide semiconductor layer.

A TFT substrate and a method for manufacturing the TFT substrate are provided. A TFT structure is formed on a substrate. A color resist layer is formed on the substrate, and a first opening area is formed in the color resist layer at a location corresponding to the TFT structure. A first black matrix is formed in the first opening area such that the TFT structure is covered by the first black matrix. A pixel electrode is formed on the color resist layer and the first black matrix and is electrically coupled to the TFT structure through the first black matrix. With such an arrangement, light can be shielded and light transmittance can be reduced when a panel including the TFT substrate is bent. This helps improve contrast of the panel.

The application provides a thin film transistor, a method for manufacturing the thin film transistor, and a display panel, the thin film transistor includes a metal electrode, and a step of forming the metal electrode includes: forming a first material layer on a substrate; performing a pattering process on the first material layer to form a groove pattern in the first material layer such that the groove pattern matches with a pattern of the metal electrode to be formed; forming the metal electrode in the groove pattern such that a gap is formed between an edge of the metal electrode and an edge of the groove pattern; forming a protection pattern on the substrate formed with the metal electrode such that the protection pattern covers the metal electrode and its edge. In the application, the protection pattern is formed on the resultant metal electrode and can effectively protect conductive metal.

Embodiments of the disclosure provide a thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device. The thin film transistor comprises a substrate (1), and a gate electrode (2), a source electrode (41) and a drain electrode (42) provided on the substrate. A projection of a gap between the source electrode (41) and the drain electrode (42) on the substrate (1) coincides with a projection of the gate electrode (2) on the substrate (1).