The present disclosure relates to an image pickup device and an electronic apparatus that enable further downsizing of device size. The device includes: a first structural body and a second structural body that are layered, the first structural body including a pixel array unit, the second structural body including an input/output circuit unit, and a signal processing circuit; a first through-via, a signal output external terminal, a second through-via, and a signal input external terminal that are arranged below the pixel array, the first through-via penetrating through a semiconductor substrate constituting a part of the second structural body, the second through-via penetrating through the semiconductor substrate; a substrate connected to the signal output external terminal and the signal input external terminal; and a circuit board connected to a first surface of the substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.

A circuit substrate to be laminated on another substrate includes a plurality of signal lines, a plurality of input portions respectively connected to the plurality of signal lines, and each configured to receive a signal from an outside of the circuit substrate, a plurality of signal processing circuits respectively connected to the plurality of input portions via the plurality of signal lines, and a plurality of transistors configured to supply a predetermined voltage to the plurality of signal lines in a state where no signal is input to the plurality of input portions from the outside. A part of the plurality of transistors is connected to a first control line, and another part of the plurality of transistors is connected to a second control line different from the first control line.

A solid-state imaging apparatus includes a first substrate that includes a plurality of photoelectric conversion units, a second substrate that includes at least a part of a readout circuit configured to read signals based on electric charges of the plurality of photoelectric conversion units and a peripheral circuit including a control circuit, and a wiring structure that is disposed between the first substrate and the second substrate and includes a pad portion electrically connected to the peripheral circuit via a draw-out wiring and an insulating layer. The wiring structure has, at least at a part thereof, a seal ring disposed in such a way as to surround the photoelectric conversion units and the peripheral circuit.

A method for forming a sensor package is disclosed. The method comprises: providing a sensor; forming an optical filter and a transparent mold on the sensor to form a sensor assembly; providing a substrate, wherein one or more connectors are attached on a front surface of the substrate; forming a first encapsulant layer on the front surface of the substrate, wherein the one or more connectors are exposed from the first encapsulant layer; disposing the sensor assembly on the first encapsulant layer; connecting the sensor with the one or more connectors; and forming a second encapsulant layer on the first encapsulant layer to cover the sensor assembly.

Provided is a semiconductor chip, a solid-state imaging device, and electronic equipment which achieve further reduction in thickness of a silicon substrate, required for 3D staking and which have a structure with no effect on device characteristics. Such a configuration having a first semiconductor chip including photodiodes, a second semiconductor chip including a signal processing circuit from the photodiodes and which is stacked on the first semiconductor chip, a first insulating film which is stacked on a second surface of the second semiconductor chip that is opposite to a first surface thereof having the first semiconductor chip stacked thereon and which includes oxygen, and a second insulating film which is stacked on the first insulating film and which includes oxygen are made, thereby preventing occurrence of leakage at a depletion layer of a transistor in the semiconductor chip and achieving reduction in film thickness.

An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Some implementations described herein include an optoelectronic device for a low-lighting application and techniques to form the optoelectronic device. The optoelectronic device includes near infrared light vertical-cavity surface emitting laser devices, near infrared light pixel sensors, and visible light pixel sensors. The near infrared light vertical-cavity surface emitting laser devices and the near infrared light pixel sensor include selectively grown epitaxial materials (e.g., silicon germanium, gallium arsenide, or another type III/V material) that improves a performance of the near infrared light vertical-cavity surface emitting laser devices, near infrared light pixel sensors.

A first substrate having a plurality of photoelectric transducers formed on the first substrate, a second substrate having a pixel transistor for each of sets of two or more of the photoelectric transducers as a constituent unit, the pixel transistor being shared by the set and formed on the second substrate, and a second wiring which is connected to a first wiring formed on the second substrate via one contact, and is connected to a plurality of first elements, the first wiring leading to a second element shared by a plurality of first elements among a plurality of elements formed on the first substrate, each of the plurality of first elements being formed for each of the photoelectric transducers are included.

A stack-type semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower interconnection on the lower substrate, a lower pad on the lower interconnection, and a lower interlayer insulating layer covering side surfaces of the lower interconnection and the lower pad. The upper device includes an upper substrate, an upper interconnection under the upper substrate, an upper pad under the upper interconnection, and an upper interlayer insulating layer covering side surfaces of the upper interconnection and the upper pad. Each of the pads has a thick portion and a thin portion. The thin portions of the pads are bonded to each other, the thick portion of the lower pad contacts the bottom of the upper interlayer insulating layer, and the thick portion of the upper pad contacts the top of the lower interlayer insulating layer.

An MN array of sensor tiles are attached to a substrate using a compliant layer that includes an adhesive. A thickness of the compliant layer varies depending on a thickness of the sensor tiles so that outward facing sides of the sensor tiles are substantially aligned.