A semiconductor structure includes: a substrate; a gate structure located on the substrate, wherein the gate structure comprises a first conductive layer, a barrier layer and a second conductive layer which are stacked in sequence; wherein the first conductive layer includes a first polysilicon layer, a first metal layer and a second polysilicon layer, wherein the first polysilicon layer is adjacent to the substrate and the second polysilicon layer is contiguous to the barrier layer; and wherein the first metal layer is located between the first polysilicon layer and the second polysilicon layer. The gate structure of the embodiments of the application has a straight profile and an excellent electrical performance.

A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.

The present invention relates to a high-mobility driving element and a method for manufacturing same, the high-mobility driving element comprising: a substrate; an insulating film disposed on the substrate; a channel layer disposed on at least a partial region of the insulating film and including a metal oxide; a source electrode and a drain electrode connected to the channel layer and disposed on the insulating film and either side of the channel layer to face each other; and a protective layer covering all of the channel layer, the source electrode, and the drain electrode, wherein the channel layer comprises a plurality of fluorinated regions in at least a partial region between the source electrode and the drain electrode.

A semiconductor device includes a semiconductor substrate. A well resistor is in the semiconductor substrate. A field plate is above the well resistor. An insulator is between the well resistor and the field plate. The well resistor includes a first terminal and a second terminal. The field plate may be coupled to the first terminal or the second terminal.

A transistor includes a vertical stack containing, in order from bottom to top or from top to bottom, a gate electrode, a gate dielectric, and an active layer and located over a substrate. The active layer includes an amorphous semiconductor material. A crystalline source region including a first portion of a crystalline semiconductor material overlies, and is electrically connected to, a first end portion of the active layer. A crystalline drain region including a second portion of the crystalline semiconductor material overlies, and is electrically connected to, a second end portion of the active layer.

Provided is a metal-oxide thin-film transistor. The metal-oxide thin-film transistor includes a gate, a gate insulation layer, a metal-oxide semiconductor layer, a source electrode, a drain electrode, and a passivation layer that are successively disposed on a base substrate; wherein the source electrode and the drain electrode are both in a laminated structure, wherein the laminated structure of the source electrode or the drain electrode at least includes a bulk metal layer and an electrode protection layer; wherein the electrode protection layer includes a metal or a metal alloy; the electrode protection layer is at least disposed between the metal-oxide semiconductor layer and the bulk metal layer; wherein a metal-oxide layer is disposed between the electrode protection layer and the bulk metal layer.

A thin film transistor, and a method for manufacturing the same and a display apparatus comprising the same are provided. The thin film transistor includes a light shielding layer, an active layer on the light shielding layer, a gate electrode spaced apart from the active layer and overlapping at least a portion of the active layer, and an internal bridge electrically connecting the light shielding layer and the gate electrode being insulated from the active layer. The internal bridge overlaps the gate electrode and penetrates the active layer along a direction from the gate electrode to the light shielding layer. In addition, one embodiment of the present disclosure provides a display apparatus including the thin film transistor.

The semiconductor device includes a substrate, a stack structure including gate patterns and interlayer insulating films that are alternately stacked on the substrate, an insulating pillar extending in a thickness direction of the substrate within the stack structure, a polycrystalline metal oxide film extending along a sidewall of the insulating pillar between the insulating pillar and the stack structure, a liner film having a transition metal between the insulating pillar and the polycrystalline metal oxide film, and a tunnel insulating film, a charge storage film, and a blocking insulating film which are disposed in order between the polycrystalline metal oxide film and the gate patterns.

A display device according to an embodiment includes a substrate and a transistor including an oxide semiconductor layer and a gate electrode disposed on the oxide semiconductor layer. The oxide semiconductor layer includes a channel region and a first source region disposed adjacent to the channel region and a second source region disposed adjacent to the first source region, and the drain region include a first drain region disposed adjacent to the channel region and a second drain region disposed adjacent to the first drain region. Each of the first source region and the first drain region includes a first impurity ion, and each of the second source region and the second drain region includes a second impurity ion which are different from the first impurity.