According to an aspect, an image sensor package includes a substrate, an image sensor die coupled to the substrate, a light transmitting member, and a plurality of pillar members disposed between and contacting the image sensor die and the light transmitting member. A height of the plurality of pillar members defines a gap height between an active region of the image sensor die and the light transmitting member. The image sensor package including a bonding material that couples the light transmitting member to the image sensor. The bonding material contacts a side of a pillar member, of the plurality of pillar members, that extends between a first end contacting the light transmitting member and a second end contacting the image sensor die.

Reflected light from a back-illuminated photoelectric conversion element is to be reduced. The photoelectric conversion element includes an on-chip lens, a substrate, a front-surface-side reflective film, and a back-surface-side reflective film. The on-chip lens condenses incident light. A photoelectric conversion unit that performs photoelectric conversion on the condensed incident light is disposed in the substrate, and the back surface side of the substrate is irradiated with the condensed incident light. The front-surface-side reflective film is disposed on the front surface side that is a different side from the back surface side of the substrate, and reflects transmitted light that is the incident light having passed through the photoelectric conversion unit. The back-surface-side reflective film is disposed on the back surface side of the substrate, has an opening of substantially the same size as the condensing size of the condensed incident light, and further reflects the reflected transmitted light.

An endoscopic instrument (48) includes a tubular shaft (63) with an objective lens (1, 45), arranged at a distal tip (49), with an arrangement (3) of connected lens elements (5, 7, 9, 11, 13) having optical properties and following each other along an optical axis (15). The arrangement has a polygonal and at least hexagonal cross-section that is perpendicular to the optical axis. The lens is inserted interlocking, friction-locking and/or bonded in an imaging channel (51) of the distal tip. The imaging channel includes a first distal imaging channel section (51a) into which the objective lens is inserted, and a second imaging channel section (51b), with a greater inner diameter, arranged proximally of the first imaging channel section. An image sensor unit (17) bond connected to the objective is arranged in the second imaging channel section. The image sensor unit has greater lateral dimensions than the objective lens.

A fingerprint sensor includes: a thin film transistor disposed on a substrate; a first insulating layer disposed on the thin film transistor; a first sensing electrode disposed on the first insulating layer and connected to the thin film transistor; a second insulating layer disposed on the first sensing electrode and including an opening exposing the first sensing electrode; a sensing semiconductor layer disposed in the opening of the second insulating layer and on the first sensing electrode, and including an N-type semiconductor layer, an I-type semiconductor layer, and a P-type semiconductor layer; and a second sensing electrode disposed on the sensing semiconductor layer. An upper surface of the sensing semiconductor layer and an upper surface of the second insulating layer are coplanar.

A method for forming a sensor package is disclosed. The method comprises: providing a sensor; forming an optical filter and a transparent mold on the sensor to form a sensor assembly; providing a substrate, wherein one or more connectors are attached on a front surface of the substrate; forming a first encapsulant layer on the front surface of the substrate, wherein the one or more connectors are exposed from the first encapsulant layer; disposing the sensor assembly on the first encapsulant layer; connecting the sensor with the one or more connectors; and forming a second encapsulant layer on the first encapsulant layer to cover the sensor assembly.

Apparatus and methods relating to photonic bandgap optical nanostructures are described. Such optical nanostructures may exhibit prohibited photonic bandgaps or allowed photonic bands, and may be used to reject (e.g., block or attenuate) radiation at a first wavelength while allowing transmission of radiation at a second wavelength. Examples of photonic bandgap optical nanostructures includes periodic and quasi-periodic structures, with periodicity or quasi-periodicity in one, two, or three dimensions and structural variations in at least two dimensions. Such photonic bandgap optical nanostructures may be formed in integrated devices that include photodiodes and CMOS circuitry arranged to analyze radiation received by the photodiodes.

An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an oxide layer which is in contact with the nanostructure body, an alloy layer which is in contact with the oxide layer and which is made of an alloy containing a first metal and a second metal that are different in work function from each other, and an n-type semiconductor which is in Schottky contact with the alloy layer.

A back-illuminated photo detector array (PDA) includes a front side and a back side. The back side receives optical energy incident on the back side at an incident direction. The front side includes a detection layer that includes detection structures and a plurality of photon-trapping nanostructures (PTN). The PTN cause optical energy incident on the back side to disperse in a direction perpendicular to the incident direction, and thereby improve an absorption efficiency of the back-illuminated PDA.

A light-absorbing structure includes a metal layer composed an inverted truncated-pyramid structure (ITPS) array to absorb an incident light especially in the infrared band. A cross-section of each inverted truncated-pyramid structure includes an upper base and a lower base, where the length of the upper base is greater than the length of the lower base. A photo detector includes a semiconductor layer, the mentioned metal layer, a first electrode, and a second electrode. An upper surface of the semiconductor layer includes an ITPS array and forms a Schottky contact with the metal layer. The first electrode contacts with an upper surface of the metal layer, and the second electrode forms Ohmic contact with a lower surface of the semiconductor layer.

A detector device for a microscope includes a multi-element photodetector having a plurality of photodetector elements arranged in a photodetector array. Each photodetector element is configured to output a detector signal upon receiving light. The plurality of photodetector elements is arranged in one or more photodetector groups. Each photodetector group has a signal combiner configured to combine the detector signals of the photodetector elements into a collective output signal of the photodetector group to reduce a dead time thereof. In a case of only one photodetector group, the multi-element photodetector includes an optical distributor configured to distribute the light across the photodetector group; or in a case of more than one photodetector group, the photodetector groups differ from each other with respect to a density at which the photodetector elements are arranged in the respective photodetector group.