A semiconductor device cell includes a drift region having a first conductivity type, a well region having a second conductivity type disposed adjacent to the drift region, the well region defining a set of well region segments. A source region having the first conductivity type is disposed adjacent to the well region and surrounded by the well region. A channel region having the second conductivity type, and defining a set of channel region segments a periphery of the channel region segment being surrounded by the well region. The well region, source region, and channel region cooperatively define a first axial length extending across the surface.

A semiconductor structure and method of manufacture is provided. In some embodiments, a semiconductor structure includes a semiconductor layer comprising a first uppermost surface, a lowermost surface, and a first sidewall surface extending between the uppermost surface and the lowermost surface. A gate dielectric layer is over the semiconductor layer. A first gate electrode is over a portion of the gate dielectric layer over the uppermost surface of the semiconductor layer. A first source/drain region is in the semiconductor layer under the first uppermost surface and adjacent the first gate electrode. A second source/drain region is in the semiconductor layer under the lowermost surface of the semiconductor layer.

A semiconductor device includes a deep well region located on a substrate, a drift region located in the deep well region, a first gate electrode that overlaps with the first body region and the drift region, a second gate electrode that overlaps with the second body region and the drift region, a first source region and a second source region located in the first and second body regions, respectively, a drain region located in the drift region and disposed between the first gate electrode and the second gate electrode, a silicide layer located on the substrate, a first non-silicide layer located between the drain region and the first gate electrode, wherein the first non-silicide layer extends over a top surface of the first gate electrode, and a first field plate contact plug in contact with the first non-silicide layer.

Various embodiments of the present disclosure are directed towards an integrated chip including an isolation structure extending into a front-side surface of a substrate. The isolation structure laterally encloses a first device region of the substrate. The isolation structure comprises a pair of isolation edges elongated in a first direction and at least partially defining the first device region. A pair of source/drain regions is disposed within the first device region and laterally spaced from one another in the first direction. A first gate electrode structure is disposed in the first device region between the pair of source/drain regions. The first gate electrode structure comprises a first pair of opposing sidewalls elongated in the first direction. The opposing sidewalls are laterally offset from a corresponding isolation edge in the pair of isolation edges by a non-zero distance in a direction towards a center of the first gate electrode structure.

A semiconductor component includes: gate structures extending into a silicon carbide body from a first surface and having a width along a first horizontal direction parallel to the first surface that is less than a vertical extent of the gate structures perpendicular to the first surface; contact structures extending into the silicon carbide body from the first surface, the gate and contact structures alternating along the first horizontal direction; shielding regions which, in the silicon carbide body, adjoin a bottom of the contact structures and are spaced apart from the gate structures along the first horizontal direction; and source regions between the first surface and body regions. The body regions form pn junctions with the source regions and include main sections adjoining the gate structures and contact sections adjoining the contact structures. A vertical extent of the contact structures is greater than the vertical extent of the gate structures.

A semiconductor device includes a source region. A drain region has a first conductivity type and a second dopant concentration spaced apart from the source region. A first drift region is located between the source region and the drain region and has the first conductivity type and a first dopant concentration that is lower than the second dopant concentration of the drain region. An oxide structure includes a first portion on or over the first drift region and a tapered portion between the first portion and the drain region. A substrate surface extension is between the tapered portion and the drain region. A buffer region has the first conductivity type between the first drift region and the drain region and under the tapered portion of the oxide structure. The buffer region has a third dopant concentration between the second dopant concentration and the first dopant concentration.

The invention provides a high-voltage semiconductor structure, which comprises a substrate with a first conductivity type, a gate structure located on the substrate, a source drift region and a drain drift region located in the substrate at two sides of the gate structure respectively, wherein the source drift region and the drain drift region respectively comprise a first part and a second part when viewed from a top, the width of the first part is smaller than that of the second part, and the first part is directly connected with the second part. The source drift region and the drain drift region are T-shaped when viewed from the top view, and the source drift region and the drain drift region have a second conductivity type.

A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of the substrate. The S/D recess cavity is between the fin structure and the isolation structure. The field effect transistor further includes a strained structure in the S/D recess cavity. The strain structure includes a lower portion. The lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. The strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.

A semiconductor component includes: gate structures extending into a silicon carbide body from a first surface to a first depth and having a width along a first horizontal direction parallel to the first surface; contact structures extending into the silicon carbide body from the first surface to a second depth, the gate and contact structures alternating along the first horizontal direction; shielding regions which, in the silicon carbide body, adjoin a bottom of the contact structures but not a bottom of the gate structures and are spaced apart from the gate structures along the first horizontal direction; and source regions between the first surface and body regions. The body regions form pn junctions with the source regions and include main sections adjoining the gate structures, and between the main sections and the contact structures, contact sections adjoining the contact structures.

A semiconductor structure and method of manufacture is provided. In some embodiments, a semiconductor structure includes a semiconductor layer comprising a first uppermost surface, a lowermost surface, and a first sidewall surface extending between the uppermost surface and the lowermost surface. A gate dielectric layer is over the semiconductor layer. A first gate electrode is over a portion of the gate dielectric layer over the uppermost surface of the semiconductor layer. A first source/drain region is in the semiconductor layer under the first uppermost surface and adjacent the first gate electrode. A second source/drain region is in the semiconductor layer under the lowermost surface of the semiconductor layer.