A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Provided are a solar cell and a light emitting device with low leakage current and low cost, using ZnO fine particles. A p-type ZnO layer (p-type layer) made primarily of p-type ZnO fine particles is formed. P-side electrodes are formed at a plurality of regions on the p-type layer. A thin insulating layer is formed between an n-type layer and the p-type layer. In the insulating layer, openings are formed at regions A each not overlapping the p-side electrodes and being apart from them in a plan view. In the configuration, by thus making the p-side electrodes apart from the regions A, the length of a current path in the p-type layer can be made substantially larger than the layer thickness.

Provided are a solar cell and a light emitting device with low leakage current and low cost, using ZnO fine particles. A p-type ZnO layer (p-type layer) made primarily of p-type ZnO fine particles is formed. P-side electrodes are formed at a plurality of regions on the p-type layer. A thin insulating layer is formed between an n-type layer and the p-type layer. In the insulating layer, openings are formed at regions A each not overlapping the p-side electrodes and being apart from them in a plan view. In the configuration, by thus making the p-side electrodes apart from the regions A, the length of a current path in the p-type layer can be made substantially larger than the layer thickness.

Some embodiments include an imaging system comprising a detector substrate, at least one detector circuit comprising a capacitor coupled with the detector substrate, the capacitor arranged to collect an electrical charge from the detector substrate, and the imaging system further comprises at least one programmable current source, arranged to provide a neutralizing charge to the capacitor, and the imaging system is configured to select a value for the neutralizing charge in dependence of a frame number.

Some embodiments include an imaging system comprising a detector substrate, at least one detector circuit comprising a capacitor coupled with the detector substrate, the capacitor arranged to collect an electrical charge from the detector substrate, and the imaging system further comprises at least one programmable current source, arranged to provide a neutralizing charge to the capacitor, and the imaging system is configured to select a value for the neutralizing charge in dependence of a frame number.

A method of detecting radiation from a source and a radiation detection system embodying the principles of the method are described. The method comprises: positioning a detector to receive radiation from the source; applying a multiplexing transformation to radiation from the source to create complexity in three dimensions in the pattern of radiation from the source; receiving a plurality of responses each being a response to an interaction with incident radiation occurring within the detector; determining, for each of the plurality of responses, a characteristic of the interaction, wherein the characteristic comprises at least a position in three dimensions of the interaction within the detector; processing the said plurality of responses in accordance with the determined position in three dimensions of each interaction within the detector and drawing inferences therefrom regarding the pattern of radiation from the source.

A method of detecting radiation from a source and a radiation detection system embodying the principles of the method are described. The method comprises: positioning a detector to receive radiation from the source; applying a multiplexing transformation to radiation from the source to create complexity in three dimensions in the pattern of radiation from the source; receiving a plurality of responses each being a response to an interaction with incident radiation occurring within the detector; determining, for each of the plurality of responses, a characteristic of the interaction, wherein the characteristic comprises at least a position in three dimensions of the interaction within the detector; processing the said plurality of responses in accordance with the determined position in three dimensions of each interaction within the detector and drawing inferences therefrom regarding the pattern of radiation from the source.

A method for manufacturing a CdTe based thin film solar cell device with a graded refractive index profile within the CdTe-based absorber layer. The method comprises the following steps: a) providing a transparent substrate comprising a front electrode, b) forming a doped CdTe based absorber layer on the substrate, c) performing an activation treatment after step b). The doped CdTe based absorber layer in step b) is formed as a doped CdTe based absorber layer stack comprising a first and a second layer. The first layer is formed as a first doping element containing layer comprising vanadium as the first doping element by depositing a first doping element-rich layer and subsequently depositing a CdSe layer or a CdSeTe layer, or by depositing a CdSe layer or a CdSeTe layer each doped with the first doping element. The second layer is formed by depositing a CdTe layer. A CdTe based thin film solar cell device with a graded refractive index profile.

An X-ray detector comprises: a semiconductor bulk made of Cd.sub.(1-x)Zn.sub.xTe, wherein x is in a range of 0 to 50%; a contact made of a first material on the semiconductor bulk; and a contact-semiconductor region, which is part of the semiconductor bulk and is adjacent to the contact. The contact-semiconductor region is doped with a second material, which differs from the first material, and a majority of the semiconductor bulk is not doped with the second material.