Junctions and methods of forming junctions are provided. The junction can include an n-type doped semiconductor and a hole-selective contact layer, and the n-type doped semiconductor can include a barrier intrinsic layer. Further, the hole-selective contact layer can be deposited directly on the barrier layer, forming an interface between the hole-selective contact layer and the barrier layer. A composition of the barrier layer is chosen to tailor a Fermi level at the interface such that the Fermi level at the interface is near a valence band edge of the n-type doped semiconductor. The barrier layer can be selected from one of an intrinsic layer and a lightly doped p-type layer.

A method for manufacturing a photodetection device, which includes the following steps: making a cadmium-rich structured coating, over a substrate of Cd.sub.xHg.sub.1-xTe, and using a first etching mask; etching to enlarge the through openings of the first etching mask or the through openings of an interlayer etched with the structured coating, so as to form a second etching mask; injecting acceptor doping elements into the substrate, throughout the second etching mask, and activating and diffusing the acceptor doping elements to form at least one P doped region in the semiconductor substrate; selective interdiffusion annealing of cadmium, so as to form in each P doped region a cadmium-rich concentrated well with a cadmium concentration lateral gradient; and making at least one electrical contact pad, at each through opening in the structured coating.

A substrate to fabricate a photodiode structure has a top layer made from cadmium-doped semiconductor material. A first HgCdTe-base layer is formed by liquid phase epitaxy from the top layer with a bath containing an n-type electrically active dopant to electrically dope the first layer. The cadmium diffuses from the top layer to the first layer to form a decreasing cadmium concentration gradient from the interface with the top layer in a direction away from the interface. The cadmium concentration gradient causes a decreasing band gap width gradient in the first layer from the interface and causes an n-type dopant concentration gradient in the first layer from the interface.

Provided is a method of manufacturing a synaptic device. The method includes forming a first electrode, forming a synaptic mimic layer including a hole transport layer and an electron transport layer on the first electrode, and forming a second electrode on the synaptic mimic layer, wherein the forming of the synaptic mimic layer includes forming the electron transport layer on the hole transport layer through a solution process.

Provided is a method of manufacturing a synaptic device. The method includes forming a first electrode, forming a synaptic mimic layer including a hole transport layer and an electron transport layer on the first electrode, and forming a second electrode on the synaptic mimic layer, wherein the forming of the synaptic mimic layer includes forming the electron transport layer on the hole transport layer through a solution process.

A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

A system, apparatus and method are provided for assembling an agriphotovoltaic (APV) system in which solar/photovoltaic cells selectively absorb a first portion or portions of the terrestrial solar spectrum and allow a second portion or portions to pass through to underlying vegetation. For example, solar photons in the green, blue, and ultraviolet (UV) range of the spectrum may be absorbed and used to generate electricity, while other photons (e.g., orange, yellow, and/or red) may be allowed to reach the vegetation. Yet further, a fraction of the generated electricity may be used to generate elements of the first portion(s) of the spectrum (e.g., some blue photons), for transmission toward the vegetation.

A system, apparatus and method are provided for assembling an agriphotovoltaic (APV) system in which solar/photovoltaic cells selectively absorb a first portion or portions of the terrestrial solar spectrum and allow a second portion or portions to pass through to underlying vegetation. For example, solar photons in the green, blue, and ultraviolet (UV) range of the spectrum may be absorbed and used to generate electricity, while other photons (e.g., orange, yellow, and/or red) may be allowed to reach the vegetation. Yet further, a fraction of the generated electricity may be used to generate elements of the first portion(s) of the spectrum (e.g., some blue photons), for transmission toward the vegetation.

A photon avalanche diode, includes a quartz substrate, a doped HgCdTe contact layer on the substrate, an absorbing HgCdTe layer on the contact layer, a larger bandgap HgCdTe layer on the absorbing layer, a doped HgCdTe layer for a top contact layer on the larger bandgap HgCdTe layer, and a non-absorbing HgCdTe metasurface on the top contact layer.