A method of baking a detector, the method comprising: placing a mid-wave infrared detector in an environmental chamber, wherein the environmental chamber is opaque. The mid-wave infrared detector comprises an anode, a guard terminal, and a cathode. The method further comprising connecting the anode to the cathode in a short circuit configuration, heating the environmental chamber to a bake temperature selected in the range of 60 to 70 degrees Celsius, and maintaining the detector in the environmental chamber for a period selected in the range of 72 hours to 240 hours.

Methods of fabricating metal oxide and/or metalloid oxide coatings and related products and systems are generally described.

Methods of fabricating metal oxide and/or metalloid oxide coatings and related products and systems are generally described.

An exemplary embodiment of the present disclosure provides an upper cell of a tandem solar cell, including: a lower transparent electrode disposed on a transparent substrate; an epitaxial Cu.sub.2O light-absorbing layer disposed on the lower transparent electrode; an N-type oxide layer disposed on the epitaxial Cu.sub.2O light-absorbing layer; an upper transparent electrode disposed on the N-type oxide layer; and a metal grid electrode disposed on the transparent electrode, wherein the epitaxial Cu.sub.2O light-absorbing layer has a single crystalline structure.

An exemplary embodiment of the present disclosure provides an upper cell of a tandem solar cell, including: a lower transparent electrode disposed on a transparent substrate; an epitaxial Cu.sub.2O light-absorbing layer disposed on the lower transparent electrode; an N-type oxide layer disposed on the epitaxial Cu.sub.2O light-absorbing layer; an upper transparent electrode disposed on the N-type oxide layer; and a metal grid electrode disposed on the transparent electrode, wherein the epitaxial Cu.sub.2O light-absorbing layer has a single crystalline structure.

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

A bio-inspired imaging device mimicking visual adaptation of human vision provides a large dynamic range in imaging an image. The device employs a neuromorphic vision sensor realized with phototransistors each being a field-effect transistor, a channel layer of which is an atomically-thin layer of two-dimensional semiconductor material. The channel layer is intentionally formed with defects trap states for trapping a portion of charge carriers generated by a light beam incident on the phototransistor such that intensity information of the light beam is memorized. A gate-source voltage directs the defects trap states to de-trap the trapped portion of charge carriers or to further trap an additional portion of charge carriers, allowing the phototransistor to exhibit a time-dependent excitation or inhibition effect on drain current to thereby enable the imaging sensor to mimic scotopic or photopic adaptation in imaging the image.

A bio-inspired imaging device mimicking visual adaptation of human vision provides a large dynamic range in imaging an image. The device employs a neuromorphic vision sensor realized with phototransistors each being a field-effect transistor, a channel layer of which is an atomically-thin layer of two-dimensional semiconductor material. The channel layer is intentionally formed with defects trap states for trapping a portion of charge carriers generated by a light beam incident on the phototransistor such that intensity information of the light beam is memorized. A gate-source voltage directs the defects trap states to de-trap the trapped portion of charge carriers or to further trap an additional portion of charge carriers, allowing the phototransistor to exhibit a time-dependent excitation or inhibition effect on drain current to thereby enable the imaging sensor to mimic scotopic or photopic adaptation in imaging the image.

A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.

Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.