Patent classifications
H
ELECTRICITY
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H10
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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H10F
INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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39/00
Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays Display name: Semiconductor photodiode arrays and other radiation detectors
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H10F39/021
of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
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H10F39/021

Infrared image sensor component manufacturing method
12615864 · 2026-04-28 · ·

A method includes following steps. A first III-V compound layer is epitaxially grown over a semiconductive substrate. The first III-V compound layer has an energy gap in a gradient distribution. A source/drain contact is formed over the first III-V compound layer. A gate structure is formed over the first III-V compound layer.