The present disclosure relates to an integrated chip including a dielectric structure over a substrate. A first capacitor is disposed between sidewalls of the dielectric structure. The first capacitor includes a first electrode between the sidewalls of the dielectric structure and a second electrode between the sidewalls and over the first electrode. A second capacitor is disposed between the sidewalls. The second capacitor includes the second electrode and a third electrode between the sidewalls and over the second electrode. A third capacitor is disposed between the sidewalls. The third capacitor includes the third electrode and a fourth electrode between the sidewalls and over the third electrode. The first capacitor, the second capacitor, and the third capacitor are coupled in parallel by a first contact on a first side of the first capacitor and a second contact on a second side of the first capacitor.

A MOS varactor includes a first N-type junction region and a second N-type junction region spaced apart from each other by a channel region, a gate insulation layer disposed on the channel region, a gate electrode disposed on the gate insulation layer, and an N-type well region including the channel region and surrounding the first and second N-type junction regions. The N-type well region exhibits a maximum impurity concentration in the channel region.

A capacitor structure is described. The capacitor structure includes a substrate; a plurality of source/drain regions formed in said substrate to form an active area, the active area having an active area width; and a first and a second plurality of gates formed above the substrate. Each gate of the first and second plurality of gates having a gate width. The gate width is configured to be less than the active area width and each gate of the first and second plurality of gates is formed between a pair of source/drain regions of the plurality of source/drain regions such that the first plurality of gates interleave with the second plurality of gates.

A capacitor structure is described. The capacitor structure includes a substrate; a source/drain region formed in the substrate to form an active area, the active area having an active area width; and at least two gates formed above the substrate. The at least two gates having a gate width. The gate width is configured to be less than the active area width. And, the at least two gates are formed such that the source/drain region is between the two gates to form at least one channel between the two gates.

A MOS varactor includes a first N-type junction region and a second N-type junction region spaced apart from each other by a channel region, a gate insulation layer disposed on the channel region, a gate electrode disposed on the gate insulation layer, and an N-type well region including the channel region and surrounding the first and second N-type junction regions. The N-type well region exhibits a maximum impurity concentration in the channel region.

A device comprises a semiconductor substrate having first and second implant regions and an electrode above and between the first and second implant regions of a first dopant type. A contact structure is in direct contact with the first and second implant regions and the electrode. A third implant region has a second dopant type different from the first dopant type. A bulk contact is provided on the third implant.

A capacitor structure is described. A capacitor structure including a substrate; a source/drain region formed in the substrate to form an active area having an active area width; and a plurality of gates formed above the substrate. The source/drain region having a reflection symmetry. Each of the plurality of gates having a gate width. The gate width is configured to be less than said active area width. And, the plurality of gates are formed to have reflection symmetry.

A capacitor structure is described. The capacitor structure includes a substrate, a plurality of source/drain regions, a first plurality gates, and a second plurality of gates. The plurality of source/drain regions is formed in the substrate. The first and second plurality of gates is formed above the substrate. Each gate of the first and second plurality of gates has a gate width. The gate widths are configured to be less than an active area width and each gate of the first and second plurality of gates is formed between a pair of the source/drain regions of the plurality of source/drain regions. And, each gate of the first plurality of gates is configured to be in line with a corresponding gate of the second plurality of gates to form a head-to-head gate configuration.

A semiconductor layer stack includes a first conductive layer, a dielectric layer including a high-k material, which is formed on the first conductive layer, a second conductive layer formed on the dielectric layer, and an interface control layer formed between the dielectric layer and the second conductive layer and including a leakage blocking material, a dopant material, a high bandgap material and a high work function material.

This application provides a method for fabricating an MOS capacitor based on a SONOS process, including: forming a gate oxide layer on the semiconductor structure, the gate oxide layer covering a SONOS unit region, an MOS capacitor region and other device regions; removing the gate oxide layer on the SONOS unit region and the MOS capacitor region; forming an ONO film layer on the SONOS unit region, the MOS capacitor region, and the gate oxide layer on the other device regions; and performing etching to remove the ONO film layer on the other device regions, and reserve the ONO film layer on the SONOS unit region and the MOS capacitor region. According to this application, the threshold voltage of the MOS capacitor itself is increased and the working voltage of the capacitor in the accumulation region is decreased, thus greatly improving the voltage withstand performance of the MOS capacitor.