A light emitting device package including a base including a top flat surface; an insulating layer on the base; a light emitting diode on the base; an optical member comprising a light transmissive material such that light emitted from the light emitting diode passes therethrough; a guiding member to guide the optical member, the guiding member having a ring shape; an electrical circuit layer electrically connected to the light emitting diode, the electrical circuit layer including an electrode portion and an extended portion, the electrode portion disposed inside the guiding member and electrically connected to the light emitting diode, the extended portion extended from the electrode portion to outside the guiding member; and an electrode layer on the electrode portion of the electrical circuit layer and electrically connected to the light emitting diode.

To suppress or prevent erosion (decrease in film thickness), water absorption, or cracking of a DBR film surface in washing or etching treatment in a downstream process. The DBR film structure of a DBR film 7D includes a pair of or a plurality of pairs of a deposited SiO.sub.2 film and a deposited TiO.sub.2 film. Such a top layer of DBR film structures has hitherto been a deposited SiO.sub.2 film that provides high reflectance. In order to prevent erosion while maintaining high reflectance, the top layer herein is a high-refractive-index thin film (for example, a deposited TiO.sub.2 film) having a thickness in the range of 1 to 13 nm, and a tapered DBR end portion (a slope having a taper angle in the range of 15 to 45 degrees) is formed by vapor deposition in a lift-off process. The high-refractive-index thin film is overlaid with a reflective metal film 8D serving as a first layer.

A light emitting device, includes a substrate; a plurality of light emitting stacked layers, comprising a first surface and a second surface; a mesa structure; a current blocking (CB) layer; a transparent conductive layer; a first pad electrode and a second pad electrode; and a passivation layer, wherein the second surface is electrically opposite to the first surface, the transparent conductive layer is disposed on or above the first surface, the first pad electrode is disposed on the transparent conductive layer and on the first surface, and the second pad electrode is disposed on the second surface and on the mesa structure, the CB layer is disposed on the first surface, surrounded by the transparent conductive layer, and at a lower region of the first pad electrode, a portion of the first pad electrode is filling a first opening of the transparent conductive layer and the CB layer.

A light emitting diode (LED) having distributed Bragg reflector (DBR) and a manufacturing method thereof are provided. The distributed Bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. The distributed Bragg reflector has a plurality of through holes, such that the metal layer and the transparent conductive layer disposed on two sides of the distributed Bragg reflector may contact each other to conduct the current. Due to the distribution properties of the through holes, the current may be more uniformly diffused, and the light may be more uniformly emitted from the light emitting layer.

A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.

A light emitting device, includes a substrate; a plurality of light emitting stacked layers, comprising a first surface and a second surface; a mesa structure; a current blocking (CB) layer; a transparent conductive layer; a first pad electrode and a second pad electrode; and a passivation layer, wherein the second surface is electrically opposite to the first surface, the transparent conductive layer is disposed on or above the first surface, the first pad electrode is disposed on the transparent conductive layer and on the first surface, and the second pad electrode is disposed on the second surface and on the mesa structure, the CB layer is disposed on the first surface, surrounded by the transparent conductive layer, and at a lower region of the first pad electrode, a portion of the first pad electrode is filling a first opening of the transparent conductive layer and the CB layer.

The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.

A light source device includes a LED package, a container where the LED package is arranged and that is filled with nitrogen gas, and a fluorine-based coating film applied on a surface of the LED package and covering a light exit surface of the LED package. The LED package includes a LED element, a base board on which the LED element is mounted, a peripheral wall portion surrounding the LED element and extending from the base board, sealing resin disposed in an inner space within the peripheral wall portion such that the LED element is sealed with the sealing resin, and the light exit surface that is a surface of the sealing resin surrounded by the peripheral wall portion. Light from the LED element is exited outside the sealing resin through the light exit surface.

Residual internal stress within optoelectronic devices such as light-emitting diodes and laser diodes is reduced to improve internal quantum efficiency and thereby increase light output.

A light emitting element includes a semiconductor stacked body, an oxide film, and a reflecting film. The semiconductor stacked body has a body surface. The oxide film has an upper surface and a bottom surface opposite to the upper surface. The oxide film is provided on the semiconductor stacked body such that the bottom surface of the oxide film is opposite to the body surface of the semiconductor stacked body. The reflecting film is provided on the oxide film to be in contact with the upper surface of the oxide film and includes silver and oxide nanoparticles.