A semiconductor device includes source and drain regions, a channel region between the source and drain regions, and a gate structure over the channel region. The gate structure includes a gate dielectric over the channel region, a work function metal layer over the gate dielectric and comprising iodine, and a fill metal over the work function metal layer.

A method for manufacturing a semiconductor structure includes: forming a channel layer on a substrate; forming a first barrier layer on the channel layer, the first barrier layer being made of a material represented by Al.sub.x1Ga.sub.1-x1N; forming a doped layer on the first barrier layer; forming a second barrier layer over the first barrier layer opposite to the channel layer, the second barrier layer being made of a material represented by Al.sub.x2Ga.sub.1-x2N, x2 being greater than x1; and forming a third barrier layer on the second barrier layer opposite to the first barrier layer, the third barrier layer being made of a material represented by Al.sub.x3Ga.sub.1-x3N, x3 being smaller than x2.

A transistor comprising an epi layer formed within a substrate. A first dopant layer formed within the epi layer. A second dopant layer formed within the first dopant layer. A third dopant layer formed within the first dopant layer having a lateral well extension. A fourth dopant layer formed within the first dopant layer wherein at least a portion of the fourth dopant layer extends over a first portion of the second dopant layer. A gap formed between an end of the source layer and an end of the lateral well extension wherein the gap is formed over a second portion of the second dopant layer. A gate contact operatively connected to the third dopant layer. A source contact operatively connected to the fourth dopant layer.

A transistor comprising an epi layer formed within a substrate. A first dopant layer formed within the epi layer. A plurality of second dopant layers formed within a recessed portion and the protruding portion of the first dopant layer. A plurality of third dopant layers formed within the protruding portion of the first dopant layer. A fourth dopant layer formed within the protruding portion of the first dopant layer. A plurality of gate contacts operatively connected to the respective second dopant layer. A source contact operatively connected to the plurality of third dopant layers and the fourth dopant layer.

A transistor comprising a first dopant layer formed within an epi layer formed within a substrate. A second dopant layer having a lower lateral well extension formed within the first dopant layer. A third dopant layer formed within the first dopant layer. A fourth dopant layer formed within the first dopant layer and over the second dopant layer. A fifth dopant layer formed within the first dopant layer. A gap formed between an end of the fifth dopant layer and an end of the first fourth dopant layer. A gate contact operatively connected to the fourth dopant layer. A source contact operatively connected to the fifth dopant layer.

A transistor comprising a first dopant layer formed within an epi layer formed within a substrate. A plurality of well implant layers layer formed within the first dopant layer. A plurality of gate implant layers formed within the first dopant layer. A sixth dopant layer formed within the first dopant layer. A first gap formed between a first end of the sixth dopant layer and an end one of the gate implant layers. A second gap formed between a second end of the sixth dopant layer and an end of an upper lateral gate extension. A plurality of gate contacts operatively connected to the respective gate implant layers. A source contact operatively connected to the sixth dopant layer.

The embodiment of the present disclosure provides a semiconductor structure and a method for manufacturing thereof, the semiconductor structure includes a substrate and a channel structure at a side of the substrate, and the channel structure includes a first channel layer and a first barrier layer which are sequentially disposed at a side of the substrate; where the semiconductor structure includes a gate region, and a source region and a drain region at both sides of the gate region, the channel structure in the source region is provided with a first groove, and the channel structure in the drain region is provided with a second groove; and two N-type heavily doped layers are in the first groove and the second groove respectively, where a surface of the N-type heavily doped layers away from the substrate has a plurality of V-shaped pits.

A semiconductor device (having a CMOS architecture) includes first to fourth cell regions Each of the first and second cell regions includes a pair of first and second stacks of nanosheets relative to, e.g., the Z-axis. The nanosheets of the first stack have a first dopant-type, e.g., N-type. The nanosheets of the second stack have a second dopant type, e.g., P-type. Each pair of first and second stacks represents a CMOS architecture relative to a second direction, e.g., the Y-axis Each of the third and fourth cell regions has CFET architecture, the CFET architecture being a type of CMOS architecture relative to the Z-axis. The third and fourth cell regions are adjacent each other relative to the Y-axis. The first and second active regions are on corresponding first and second sides of each of the third and fourth active regions. The first and second cell regions are non-CFET cell regions.

Group III oxide semiconducting devices with effective device isolation and edge termination regions.

An integrated bilateral switch power device is based on gallium nitride, formed in a die having a semiconductor body integrating a first and a second field effect transistor. The semiconductor body has a semiconductor substrate and a layer stack based on gallium nitride. The layer stack is superimposed on the substrate and forms a channel region and a first and a second gate region arranged side by side and at a mutual distance above the channel region. The substrate is electrically coupled to a substrate node. A first and a second conduction contact region are arranged side by side and at a mutual distance on opposite sides of the channel region and a substrate bias RC network is configured to electrically couple the substrate node selectively to the first and the second conduction contact regions which is at a minimum potential.