Abstract
A transistor comprising an epi layer formed within a substrate. A first dopant layer formed within the epi layer. A second dopant layer formed within the first dopant layer. A third dopant layer formed within the first dopant layer having a lateral well extension. A fourth dopant layer formed within the first dopant layer wherein at least a portion of the fourth dopant layer extends over a first portion of the second dopant layer. A gap formed between an end of the source layer and an end of the lateral well extension wherein the gap is formed over a second portion of the second dopant layer. A gate contact operatively connected to the third dopant layer. A source contact operatively connected to the fourth dopant layer.
Claims
1. A transistor comprising: a substrate; an epi layer formed within the substrate; a first dopant layer formed within the epi layer; a second dopant layer formed within the first dopant layer having a first lateral well extension; a third dopant layer formed within the first dopant layer having a second lateral well extension; a fourth dopant layer formed within the first dopant layer; a gap formed between an end of the fourth dopant layer and an end of the second lateral well extension of the third dopant layer wherein the gap formed over a portion of the second dopant layer; a gate contact operatively connected to the second lateral well extension of the third dopant layer; and a source contact operatively connected to the fourth dopant layer and the first lateral well extension of the second dopant layer.
2. The transistor of claim 1, wherein the fourth dopant layer operatively connected to the second dopant layer.
3. The transistor of claim 1, wherein the substrate comprises a first concentration of a first type dopant.
4. The transistor of claim 3, wherein the epi layer comprises a second concentration of the first type dopant, the first concentration greater than the second concentration.
5. The transistor of claim 4, wherein the first dopant layer comprises a third concentration of the first type dopant.
6. The transistor of claim 5, wherein the second dopant layer and the third dopant layer comprises a fourth concentration of a second type dopant.
7. The transistor of claim 6, wherein the fourth dopant layer comprises a fifth concentration of the first type dopant.
8. The transistor of claim 7, wherein the first type dopant comprises an n-type dopant and the second type dopant comprises a p-type dopant.
9. The transistor of claim 7, wherein the first type dopant comprises a p-type dopant and the second type dopant comprises an n-type dopant.
10. A method of manufacturing a transistor, the method comprising: providing a substrate; forming an epi layer within the substrate; implanting a first dopant layer into the epi layer; implanting a second dopant layer into the first dopant layer having a first lateral well extension; implanting a third dopant layer into the first dopant layer having a second lateral well extension; implanting a fourth dopant layer into the first dopant layer; forming a gap between an end of the fourth dopant layer and an end of the second lateral well extension of the third dopant layer wherein the gap formed over a portion of the second dopant layer; forming a gate contact operatively connected to the second lateral well extension of the third dopant layer; and forming a source contact operatively connected to the fourth dopant layer and the first lateral well extension of the second dopant layer.
11. The method of claim 10, wherein the fourth dopant layer operatively connected to the second dopant layer.
12. The method of claim 10, wherein the substrate comprises a first concentration of a first type dopant.
13. The method of claim 12, wherein the epi layer comprises a second concentration of the first type dopant, the first concentration greater than the second concentration.
14. The method of claim 13, wherein the first dopant layer comprises a third concentration of the first type dopant.
15. The method of claim 14, wherein the second dopant layer and the third dopant layer comprises a fourth concentration of a second type dopant.
16. The method of claim 15, wherein the fourth dopant layer comprises a fifth concentration of the second type dopant.
17. The method of claim 16, wherein the first type dopant comprises an n-type dopant and the second type dopant comprises a p-type dopant.
18. The method of claim 16, wherein the first type dopant comprises a p-type dopant and the second type dopant comprises an n-type dopant.
Description
BRIEF DESCRIPTION OF DRAWINGS
[0005] FIG. 1 shows an illustration of a transistor according to one or more examples.
[0006] FIG. 2A is a cross sectional view of some of the steps in a method of manufacturing a transistor according to one or more examples.
[0007] FIG. 2B is a cross sectional view of some of the steps in a method of manufacturing a transistor according to one or more examples.
[0008] FIG. 2C is a cross sectional view of some of the steps in a method of manufacturing a transistor according to one or more examples.
DETAILED DESCRIPTION OF VARIOUS EXAMPLES
[0009] Reference will now be made in detail to the following various examples, which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. The following examples may be in various forms without being limited to the examples set forth herein.
[0010] FIG. 1 shows an illustration of a transistor 10 according to one or more examples. Transistor 10 may represent, and may be called a junction field-effect transistor, without limitation. The example transistor 10 (junction field-effect transistor) of FIG. 1 includes a substrate 20. The substrate 20 shown in FIG. 1 may have a first concentration of a first type dopant, e.g., 5E18 (i.e. 510.sup.18). A drain contact 25 may be formed at a first side of the substrate 20. The example transistor 10 (junction field-effect transistor) of FIG. 1 may include an epi layer 30 formed within the substrate 20 at a second side of the substrate 20. The second side of the substrate 20 is opposite the first side of the substrate 20 where the drain contact 25 was formed. The epi layer 30 may comprise a second concentration of the first type dopant, wherein the first concentration of first type dopant in the substrate 20 is greater than the second concentration of first type dopant in the epi layer 30. The example transistor 10 (junction field-effect transistor) of FIG. 1 may include a first dopant layer 40 formed within the epi layer 30. The first dopant layer 40 may comprise a third concentration of the first type dopant. The example transistor 10 (junction field-effect transistor) of FIG. 1 may include a second dopant layer 50 formed within the first dopant layer 40 having a first lateral well extension 55. The example transistor 10 (junction field-effect transistor) of FIG. 1 may include a third dopant layer 60 formed within the first dopant layer 40 having a second lateral well extension 65. The second dopant layer 50 and the third dopant layer 60 may comprise a fourth concentration of a second type dopant that may have a peak doping in the range 1E17 to 5E18. The example transistor 10 (junction field-effect transistor) of FIG. 1 may include a fourth dopant layer 70 formed within the first dopant layer 40. The fourth dopant layer 70 may be operatively connected to the first lateral well extension 55 of the second dopant layer 50. The fourth dopant layer 70 may comprise a fifth concentration of the first type dopant. The example transistor 10 (junction field-effect transistor) of FIG. 1 may include a planar surface over the third dopant layer 60 and the fourth dopant layer 70. The example transistor 10 (junction field-effect transistor) of FIG. 1 may include a gap 80 formed between an end 75 of the fourth dopant layer 70 and an end 68 of the second lateral well extension 65 of the third dopant layer 60 wherein the gap 80 is formed over a portion of the second dopant layer 50. The example transistor 10 (junction field-effect transistor) of FIG. 1 may include a gate contact 90 operatively connected to the second lateral well extension 65 of the third dopant layer 60. The gate contact 90 may be made from a metal, polysilicon, or other suitable material. The example transistor 10 (junction field-effect transistor) of FIG. 1 may include a source contact 100 operatively connected to the fourth dopant layer 70 and the first lateral well extension 55 of the second dopant layer 50. The source contact 100 may be made from a metal, polysilicon, or other suitable material. When a gate-to-source voltage is applied to the transistor 10 (junction field-effect transistor) of FIG. 1, current flows through a channel created between the second lateral well extension 65 of the third dopant layer 60 and the fourth dopant layer 70 from the source contact 100 to the drain contact 25, thereby creating a shielded source 100.
[0011] In one example of the example transistor 10 (junction field-effect transistor) of FIG. 1, the first type dopant may be an n-type dopant and the second type dopant may be a p-type dopant. In another example of the example transistor 10 (junction field-effect transistor) of FIG. 1, the first type dopant may be a p-type dopant and the second type dopant may be an n-type dopant.
[0012] FIGS. 2A-2C show a method of manufacturing a transistor 10 according to one or more examples. Although the example method shown in FIGS. 2A-2C include steps shown in a particular order, the steps may be performed in a different order, and may include additional steps that are not explicitly shown.
[0013] FIG. 2A is a cross sectional view of some of the steps in a method of manufacturing a transistor 10 according to one or more examples. Transistor 10 may represent, and may be called a junction field-effect transistor, without limitation. In FIG. 2A, the example method shows a substrate 20 that may have a first concentration of a first type dopant, e.g., 5E18 (i.e. 510.sup.18). In FIG. 2A, the method may include forming an epi layer 30 formed within the substrate 20. The epi layer 30 may comprise a second concentration of the first type dopant, wherein the first concentration of first type dopant in the substrate 20 is greater than the second concentration of first type dopant in the epi layer 30.
[0014] FIG. 2B is a cross sectional view of some of the steps in a method of manufacturing a transistor 10 according to one or more examples. In FIG. 2B, the method may include implanting a first dopant layer 40 into the epi layer 30. The first dopant layer 40 may comprise a third concentration of the first type dopant.
[0015] FIG. 2C is a cross sectional view of some of the steps in a method of manufacturing a transistor according to one or more examples. In the method step shown in FIG. 2C, the method may include implanting a second dopant layer 50 into the first dopant layer 40. The second dopant layer 50 may have a first lateral well extension 55. In the method step shown in FIG. 2C, the method may include implanting a third dopant layer 60 into the first dopant layer 40. The third dopant layer 60 may have a second lateral well extension 65. The second dopant layer 50 and the third dopant layer 60 may comprise a fourth concentration of a second type dopant. In the method step shown in FIG. 2C, the method may include implanting a fourth dopant layer 70 into the first dopant layer 40. The fourth dopant layer 70 may be operatively connected to the first lateral well extension 55 of the second dopant layer 50. The fourth dopant layer 70 may comprise a fifth concentration of the first type dopant. In the method step shown in FIG. 2C, the method may include forming a planar surface over the first lateral well extension 55 of the second dopant layer 50, over the second lateral well extension 65 of the third dopant layer 60 and over the fourth dopant layer 70. In FIG. 2C, the method may include forming a gap 80 formed between an end 75 of the fourth dopant layer 70 and an end 68 of the second lateral well extension 65 of the third dopant layer 60 wherein the gap 80 is formed over a portion of the second dopant layer 50. In FIG. 2C, the method may include forming a gate contact 90 operatively connected to the second lateral well extension 65 of the third dopant layer 60. The gate contact 90 may be made from a metal, polysilicon, or other suitable material. In FIG. 2C, the method may include forming a source contact 100 operatively connected to the fourth dopant layer 70 and the first lateral well extension 55 of the second dopant layer 50. The source contact 100 may be made from a metal, polysilicon, or other suitable material. In FIG. 2C, the method may include forming a drain contact 25 that may be formed on the substrate 20 at an opposite side of the substrate 20 to the epi layer 30. The drain contact 25 may be made from a metal, polysilicon, or other suitable material. When a gate-to-source voltage is applied to the transistor 10 (junction field-effect transistor) of FIG. 2C, current flows through a channel created between the second lateral well extension 65 of the third dopant layer 60 and the fourth dopant layer 70 from the source contact 100 to the drain contact 25, thereby creating a shielded source 100.
[0016] The example method of manufacturing a transistor 10 of FIGS. 2A-2C may have the first type dopant be an n-type dopant with the second type dopant being a p-type dopant. Alternatively, the first type dopant may be a p-type dopant with the second type dopant being an n-type dopant.
[0017] Various examples have been disclosed herein, in connection with the above description and the drawings. It will be understood that it would be unduly repetitious to literally describe and illustrate every combination and subcombination of these examples. Accordingly, all examples may be combined in any way and/or combination, and the present specification, including the drawings, shall be construed to constitute a complete written description of all combinations and subcombinations of the examples described herein, and of the manner and process of making and using them, and shall support claims to any such combination or subcombination.
[0018] It will be appreciated by persons skilled in the art that the examples described herein are not limited to what has been particularly shown and described herein above. In addition, unless mention was made above to the contrary, it should be noted that all of the accompanying drawings are not to scale. A variety of modifications and variations are possible in light of the above teachings.
