A device includes a plurality of photodiode regions within a semiconductor substrate, a plurality of transistors, a plurality of deep trench isolation (DTI) structures, and a plurality of isolation structures. The transistors are over a front-side surface of the semiconductor substrate. The DTI structures extend a first depth from a backside surface of the semiconductor substrate into the semiconductor substrate. The isolation structures extend a second depth from the backside surface of the semiconductor substrate into the semiconductor substrate. The second depth is less than the first depth. From a plan view, each of the plurality of isolation structures has a triangular profile at the backside surface of the semiconductor substrate.

Distance measurement accuracy is improved. An avalanche photodiode sensor according to an embodiment includes a first semiconductor substrate and a second semiconductor substrate bonded to a first surface of the first semiconductor substrate, wherein the first semiconductor substrate includes a plurality of photoelectric conversion portions arranged in a matrix and an element separation portion, the plurality of photoelectric conversion portions include a first photoelectric conversion portion, the element separation portion has a first element separation region and a second element separation region, the first photoelectric conversion portion is arranged between the first element separation region and the second element separation region, the first semiconductor substrate further includes a plurality of concave-convex portions on a second surface opposite to the first surface and between the first element separation region and the second element separation region, and the second semiconductor substrate includes a reading circuit connected to each of the photoelectric conversion portions.

The disclosed embodiments include an image sensor and a method to manufacture thereof. In one embodiment, the method includes forming a plurality of semiconductor slices having a uniform width, at least two of the semiconductor slices having different lengths, and each of the semiconductor slices having a slice edge defining a side of the semiconductor slice. The method further includes arranging the semiconductor slices to form a semi-rectangular shape defining boundaries of the image sensor, each of the semiconductor slices being disposed proximate to another semiconductor slice of the plurality of semiconductor slices. Forming each semiconductor slice includes forming a plurality of pixel arrays over the semiconductor slice, the pixel arrays having an approximately uniform pixel pitch, and forming a seal ring around the semiconductor slice, the seal ring enclosing the semiconductor slice and the pixel arrays of the semiconductor slice, and each semiconductor slice having a different seal ring.

The present disclosure provides an image sensor panel and a method for capturing graphical information using the image sensor panel. In one aspect, the image sensor panel includes a substrate and a sensor array on the substrate, the sensor array including a plurality of photosensitive pixels. The substrate includes a first region defined by the sensor array and a second region other than the first region. The second region is optically transparent and has an area greater than that of the first region.

An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a microlens, a waveguide unit having a core and a cladding and capable of propagating light transmitted through the microlens, and a pair of photo diodes and configured to carry out photoelectric conversion of light guided by the waveguide unit. Each of the pixels includes an absorption unit that is electrically independent, and the absorption unit has an optical absorptance with respect to a light beam to be photoelectrically converted by the pair of photo diodes higher than an optical absorptance of the core and of the cladding. An optical distance between the absorption unit and an interface of the cladding and the core on the side toward the microlens is no greater than a wavelength of the light beam to be converted.

A complementary metal-oxide-semiconductor depth sensor element comprises a photogate formed in a photosensitive area on a substrate. A first transfer gate and a second transfer gate are formed respectively on two sides of the photogate in intervals. A first floating doped area and a second floating doped area are formed respectively on the outer sides of the first transfer gate and the second transfer gate. The first and second floating doped regions have dopants of a first polarity and the semiconductor area has dopants of a second polarity opposite to the first polarity. Since the photogate and at least parts of the first and second transfer gates connect to the same semiconductor area and no other dopants of polarity opposite to the second polarity. Therefore, the majority carriers from the photogate excited by lights drift, but not diffuse, to transfer to the first and second transfer gates.

An image sensor for high angular response discrimination is provided. A plurality of pixels comprises a phase detection autofocus (PDAF) pixel and an image capture pixel. Pixel sensors of the pixels are arranged in a semiconductor substrate. A grid structure is arranged over the semiconductor substrate, laterally surrounding color filters of the pixels. Microlenses of the pixels are arranged over the grid structure, and comprise a PDAF microlens of the PDAF pixel and an image capture microlens of the image capture pixel. The PDAF microlens comprises a larger optical power than the image capture microlens, or comprises a location or shape so a PDAF receiving surface of the PDAF pixel has an asymmetric profile. A method for manufacturing the image sensor is also provided.

In a solid-state imaging device including a plurality of pixels each pixel including a plurality of photodiodes, it is prevented that an incidence angle of incident light on the solid-state imaging device becomes large in a pixel in an end of the solid-state imaging device, causing a difference in output between the two photodiodes in the pixel, and thus autofocus detection accuracy is deteriorated. Photodiodes extending in a longitudinal direction of a pixel allay section are provided in each pixel. The photodiodes in the pixel are arranged in a direction orthogonal to the longitudinal direction of the pixel allay section.

An imaging device which can perform imaging with a global shutter system and in which transistors are shared by pixels is provided. The imaging device includes first and second photoelectric conversion elements and first to sixth transistors. Active layers of the first to fourth transistors each include an oxide semiconductor. The imaging device has a configuration in which a reset transistor and an amplifier transistor are shared by a plurality of pixels and can perform imaging with a global shutter system. In addition, the imaging device can be used as a high-speed camera.

A method of protecting a CMOS device within an integrated photonic semiconductor structure is provided. The method may include depositing a conformal layer of germanium over the CMOS device and an adjacent area to the CMOS device, depositing a conformal layer of dielectric hardmask over the germanium, and forming, using a mask level, a patterned layer of photoresist for covering the CMOS device and a photonic device formation region within the adjacent area. Openings are etched into areas of the deposited layer of silicon nitride not covered by the patterned photoresist, such that the areas are adjacent to the photonic device formation region. The germanium material is then etched from the conformal layer of germanium at a location underlying the etched openings for forming the photonic device at the photonic device formation region. The conformal layer of germanium deposited over the CMOS device protects the CMOS device.