The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.

An image sensor pixel includes first, second and third PIN photodiodes having respective first, second and third widths, which are unequal to each other, and respective first, second and third absorption spectra associated therewith, which are unequal to each other. The first absorption spectra is a first linear combination of three color matching functions divided by a wavelength of light incident the image sensor, the second absorption spectra is a second linear combination of the three color matching functions divided by a wavelength of light incident the image sensor, and the third absorption spectra is a third linear combination of the three color matching functions divided by a wavelength of light incident the image sensor.

A pixel includes, on a first face, first trenches extending parallel to a first direction and regularly spaced in a second direction (orthogonal to the first direction) and second trenches extending parallel to the second direction and regularly spaced in the first direction. The first trenches include first notches, each first notch extending from a first trench and being aligned with a corresponding second trench. The second trenches include second notches, each second notch extending from a second trench and being aligned with a corresponding first trench.

A pixel array includes octagon-shaped pixel sensors and a combination of visible light pixel sensors (e.g., red, green, and blue pixel sensors) and near infrared (NIR) pixel sensors. The color information obtained by the visible light pixel sensors and the luminance obtained by the NIR pixel sensors may be combined to increase the low-light performance of the pixel array, and to allow for low-light color images in low-light applications. The octagon-shaped pixel sensors may be interspersed in the pixel array with square-shaped pixel sensors to increase the utilization of space in the pixel array, and to allow for pixel sensors in the pixel array to be sized differently. The capability to accommodate different sizes of visible light pixel sensors and NIR pixel sensors permits the pixel array to be formed and/or configured to satisfy various performance parameters.

The present technique relates to a solid-state imaging device, a solid-state imaging device manufacturing method, and an electronic apparatus that are capable of providing a solid-state imaging device that can prevent generation of RTS noise due to miniaturization of amplifying transistors, and can achieve a smaller size and a higher degree of integration accordingly. A solid-state imaging device includes a photodiode as a photoelectric conversion unit, a transfer gate that reads out charges from the photodiode, a floating diffusion from which the charges of the photodiode are read by an operation of the transfer gate, and an amplifying transistor connected to the floating diffusion. More particularly, the amplifying transistor is of a fully-depleted type. Such an amplifying transistor includes an amplifier gate (gate electrode) extending in a direction perpendicular to convex strips formed by processing a surface layer of a semiconductor layer, for example.

The present technology relates to a solid-state imaging element and electronic equipment that allow an increase in the signal charge amount Qs that each pixel can accumulate. A solid-state imaging element according to the first aspect of the present technology includes: a photoelectric conversion section formed in each pixel; and an inter-pixel separation section separating the photoelectric conversion section of each pixel, in which the inter-pixel separation section includes a protruding section having a shape protruding toward the photoelectric conversion section. The present technology can be applied to a back-illuminated CMOS image sensor, for example.

A photodetector including a substrate having a semiconductor material layer, such as a silicon-containing layer, and a germanium-based well embedded in the semiconductor material layer, where a gap is located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer. The gap between the lateral side surface of the germanium-based well and the surrounding semiconductor material layer may reduce the surface contact area between the germanium-containing material of the well and the surrounding semiconductor material, which may be a silicon-based material. The formation of the gap located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer may help minimize the formation of crystal defects, such as slips, in the germanium-based well, and thereby reduce the dark current and improve photodetector performance.

Resolution is improved in a required direction while maintaining contrast in inspection of an anamorphic mask. A photodetector detects light from a mask with a reduction rate at the time of exposure in a longitudinal direction different from a reduction rate at the time of exposure in a lateral direction. The photodetector includes a rectangular pixel, a ratio of a dimension of the rectangular pixel in the longitudinal direction to a dimension of the rectangular pixel in the lateral direction being equal to an inverse ratio of the reduction rate in the longitudinal direction to the reduction rate in the lateral direction.

Long wavelength polarization sensitive image sensor devices and methods are provided. The image sensor includes pixels that each include a plurality of sub-pixels. At least some of the sub-pixels within each pixel are associated with a grid structure. Each grid structure includes two or more linear grid elements that are parallel to one another. The grid elements are disposed directly on a light incident surface of a sensor substrate in which the sub-pixels are formed, and are electrically floating. The sub-pixels can be formed as photodiodes in a silicon or other semiconductor substrate. Infrared light incident on the pixels results in the heating of the grid elements, and in particular of grid elements oriented in a direction that is parallel to a polarization of the incident light, which in turn generates a current in associated a sub-pixels. A polarization state and intensity of the incident light can be determined.

A pixel array may include a metal shielding structure on a grid structure between pixel sensors in the pixel array. The metal shielding structure laterally extends outward from the grid structure to reflect photons of incident light that might otherwise travel between the grid structure and the isolation structure of the pixel sensors in the pixel array. The lateral extensions of the metal shielding reflect these photons to reduce crosstalk between adjacent pixel sensors, thereby increasing the performance of the pixel array.