A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

A front-side illuminated image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode, transistor gate structures, shallow trench isolation structures, and other associated pixel circuits formed in a semiconductor substrate. Buried light shielding structures that are opaque to light may be formed over regions of the substrate to prevent the transistor gate structures, shallow trench isolation structures, and the other associated pixel circuits from being exposed to stray light. Buried light shielding structures formed in this way can help reduce optical pixel crosstalk.

A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. The dielectric layer is located on the substrate. The light pipe structure is located in the dielectric layer of the first region. The light pipe structure corresponds to the sensor. The pad is located in the dielectric layer of a second region. The shielding layer is located on the dielectric layer, wherein the light pipe structure is surrounded by the shielding layer. The protection layer is located on the shielding layer. At least one pad opening is disposed in the dielectric layer, the shielding layer, and the protection layer above the pad. The pad opening exposes a top surface of the corresponding pad.

A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals.

To obtain an imaging unit, a lens barrel, and a portable terminal which can effectively suppress spring-back of solid-state imaging elements, while facilitating height lowering thereof. An imaging unit includes: a solid-state imaging element; and an imaging lens for forming a subject image on a photoelectric conversion part of the solid-state imaging element. An imaging surface of the solid-state imaging element is curved in a manner that a peripheral side is inclined toward an object side relative to a screen center. The imaging lens constrains the solid-state imaging element to prevent a radius of curvature of the imaging surface from varying. Thus, field curvature, distortion aberration, and comatic aberration are appropriately corrected.

A CMOS time-of-flight image sensor must be robust to interface traps and fixed charges which may be present due to fabrication and which may cause an undesired induced electric field in the silicon substrate. This undesired induced electrical field is reduced by introducing a hydrogen-enriched dielectric material. Further remedial techniques can include applying ultraviolet light and/or performing a plasma treatment. Another possible approach adds a passivation doping layer at a top of the detector as a shield against the undesired induced electric field. One or more of the above techniques can be used to prevent any unstable behavior of the time-of-flight sensor.

An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an InGaZn oxide including c-axis-aligned crystals.

A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.

A photodetector includes a plurality of pixels and a common reset line connected to the pixels, and each of the pixels includes: an avalanche photodiode; a quenching transistor that includes a gate and a source which are connected to the cathode of the avalanche photodiode; and a photodiode reset transistor that includes a source and a drain one of which is connected to the drain of the quenching transistor and the other of which is connected to the common reset line.