Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.

A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a first emitter region over a substrate, the first emitter region having a perimeter around a portion of the substrate. A first conductive contact is electrically coupled to the first emitter region at a location outside of the perimeter of the first emitter region.

The present disclosure provides a solar cell and a method for preparing the same. The solar cell includes a semiconductor substrate, a first heavily doped layer, a front electrode, an emitter layer, and a back electrode. The first heavily doped layer and the front electrode are disposed on the front surface of the semiconductor substrate. The first heavily doped layer is disposed between the front electrode and the semiconductor substrate. The emitter layer is disposed between the back electrode and the semiconductor substrate.

Methods of fabricating emitter regions of solar cells using surface treatments, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes treating a surface of a silicon substrate to form a lyophilic area between two lyophobic areas and depositing a liquid phase material containing a silicon material in the lyophilic area to form an emitter region.

Methods of fabricating emitter regions of solar cells using surface treatments, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes treating a surface of a silicon substrate to form a lyophilic area between two lyophobic areas and depositing a liquid phase material containing a silicon material in the lyophilic area to form an emitter region.

Provided is a solar cell. The solar cell includes a silicon substrate, a P-type doping structure located on the back surface of the silicon substrate, an N-type doping structure located on the back surface of the silicon substrate, a spacing region located between the P-type doping structure and the N-type doping structure, a first electrode located on a back surface of the P-type doping structure, and a second electrode located on a back surface of the N-type doping structure. In a first direction, the back surface of the P-type doping structure is higher than the back surface of the N-type doping structure, and the first direction is from a front surface of the silicon substrate to the back surface of the silicon substrate. With the solar cell of the present disclosure, more carriers can be generated and successfully collected, improving a cell efficiency.

In one aspect, a preparation method for a double-sided solar cell includes: preparing a semi-finished product of the double-sided solar cell, the semi-finished product including a silicon wafer, and a P-type doped layer, a front passivation layer, and a front anti-reflection layer that are sequentially formed on a front surface of the silicon wafer; providing an opening corresponding to a front finger on a front surface of the semi-finished product, the opening extending through the front anti-reflection layer and the front passivation layer in sequence and exposing a surface of the P-type doped layer; and coating a non-fire-through paste in contact with the P-type doped layer through the opening, sintering the paste, to form the front finger. This preparation method can increase the open circuit voltage of the double-sided solar cell, and improve the conversion efficiency of double-sided solar cell.

Disclosed are a solar cell and a photovoltaic module. The solar cell includes: a solar cell, a substrate, a passivation contact layer, a doped layer, and a first passivation dielectric layer. The substrate has a first surface and a second surface arranged to be opposite to each other, and the first surface of the substrate includes a first region and a second region alternately arranged along a preset direction. The passivation contact layer is disposed in the first region and includes a tunneling layer and a doped conductive layer stacked and arranged in the first region of the first surface. The doped layer is disposed in the second region. The first passivation dielectric layer is disposed on a surface of the doped layer facing away from the substrate.

Disclosed is a method for producing a photovoltaic cell. The method includes providing a silicon wafer, forming a tunneling oxide layer on a first side of the silicon wafer, forming an amorphous silicon layer having alternatingly arranged P-type amorphous silicon and N-type amorphous silicon on a side of the tunneling oxide layer away from the silicon wafer, forming a protective layer on a side of the amorphous silicon layer away from the silicon wafer, performing laser processing on the protective layer and the amorphous silicon layer to form grooves, subjecting the silicon wafer to further processing to increase depths of the grooves, removing the protective layer, and subjecting the silicon wafer to high temperature processing to convert the amorphous silicon layer into a polycrystalline silicon layer.

Disclosed is a method for producing a photovoltaic cell. The method includes providing a silicon wafer, forming a tunneling oxide layer on a first side of the silicon wafer, forming an amorphous silicon layer having alternatingly arranged P-type amorphous silicon and N-type amorphous silicon on a side of the tunneling oxide layer away from the silicon wafer, forming a protective layer on a side of the amorphous silicon layer away from the silicon wafer, performing laser processing on the protective layer and the amorphous silicon layer to form grooves, subjecting the silicon wafer to further processing to increase depths of the grooves, removing the protective layer, and subjecting the silicon wafer to high temperature processing to convert the amorphous silicon layer into a polycrystalline silicon layer.