One embodiment of the invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can form a sacrificial layer on a first side of a Si substrate; load the Si substrate into a chemical vapor deposition tool, with the sacrificial layer in contact with a wafer carrier; and form a first doped Si layer on a second side of the Si substrate. The system subsequently can remove the sacrificial layer; load the Si substrate into a chemical vapor deposition tool, with the first doped Si layer facing a wafer carrier; and form a second doped Si layer on the first side of the Si substrate.

A photovoltaic device includes a digital alloy buffer layer including a plurality of alternating layers of semiconductor material. An absorption layer epitaxially is grown on the digital alloy buffer layer, an intrinsic layer is formed on the absorption layer and a doped layer is formed on the intrinsic layer. A conductive contact is formed on the doped layer.

A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a first emitter region over a substrate, the first emitter region having a perimeter around a portion of the substrate. A first conductive contact is electrically coupled to the first emitter region at a location outside of the perimeter of the first emitter region.

Some embodiments of the present invention relate to a technical field of N-type TOPCon solar cells, and disclose a back-side metal electrode of an N-type TOPCon solar cell. The back-side metal electrode includes a substrate, a plurality of first silver fine grids disposed on a passivation film which is on a back side of the substrate, a plurality of second aluminum fine grids overlaid on the plurality of first silver fine grids, and a plurality of first silver main grids disposed perpendicular to the plurality of first silver fine grids. Each of the plurality of first silver main grids is a segmented structure. The back-side metal electrode further includes a plurality of second aluminum main grids, which are formed, in a printing manner, between any two adjacent grid segments of a plurality of grid segments and around each of the plurality of grid segments.

Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

The disclosure is applicable to the technical field of solar cells and provides a solar cell and a method for manufacturing thereof, a cell assembly, and a photovoltaic system. In the solar cell, a P-type silicon substrate is used as a base layer, a first surface of the P-type silicon substrate is not completely covered with P-type doped layers, and a second surface of the P-type silicon substrate is not completely covered with N-type doped layers. Moreover, on the P-type silicon substrate, the P-type doped layers are locally arranged on a light-facing surface. In addition, the N-type doped layers are locally arranged on a light-sheltered surface, and a total area of all third regions is set to be greater than that of all first regions.

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

Solar cells of varying composition are disclosed, generally including a central substrate, conductive layer(s), antireflection layers(s), passivation layer(s) and/or electrode(s). Multifunctional layers provide combined functions of passivation, transparency, sufficient conductivity for vertical carrier flow, the junction, and/or varying degrees of anti-reflectivity. Improved manufacturing methods including single-side CVD deposition processes and thermal treatment for layer formation and/or conversion are also disclosed.

One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside glass cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. The solar cell can also include a conductive contact disposed on the semiconductor region with the conductive contact including a paste, a first metal, and a first conductive portion that includes a conductive alloy formed from the first metal at an interface of the substrate and the semiconductor region.