A solar cell, a preparation method thereof, a photovoltaic module, and a photovoltaic system, wherein the solar cell includes a substrate and a first tunnel oxide layer and a passivation medium layer sequentially stacked on a first surface of the substrate. The first tunnel oxide layer is at least partially in contact with the first surface. The passivation medium layer includes at least a transparent conductive oxide layer.

A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a substrate having a light-receiving surface and a back surface. The solar cell can include a first semiconductor region of a first conductivity type disposed on a first dielectric layer, wherein the first dielectric layer is disposed on the substrate. The solar cell can also include a second semiconductor region of a second, different, conductivity type disposed on a second dielectric layer, where a portion of the second thin dielectric layer is disposed between the first and second semiconductor regions. The solar cell can include a third dielectric layer disposed on the second semiconductor region. The solar cell can include a first conductive contact disposed over the first semiconductor region but not the third dielectric layer. The solar cell can include a second conductive contact disposed over the second semiconductor region, where the second conductive contact is disposed over the third dielectric layer and second semiconductor region. In an embodiment, the third dielectric layer can be a dopant layer.

An ultrathin silicon oxynitride interface material, a tunnel oxide passivated structure and preparation methods and applications thereof are provided. The ultrathin silicon oxynitride interface material is an SiON film with a thickness of 1 nm to 4 nm, and the percentage content of N atoms is 1% to 40%. Compared with silicon oxide, the diffusion rate of boron in the SiON film of the present disclosure is low, which effectively reduces the damaging effect of boron, improves the integrity of the SiON film and maintains the chemical passivation effect. The SiON film with high nitrogen concentration can noticeably lower the concentration of boron on the silicon surface so as to lessen the boron-induced defects. Furthermore, the SiON film has an energy band structure approximate to silicon nitride, which increases the hole transport efficiency and hole selectivity, and further improves the passivation quality and reduces the contact resistivity.

Embodiments of the present disclosure relate to the photovoltaic field, and provide a solar cell and a photovoltaic module. The solar cell includes a substrate, a tunneling dielectric layer formed on the substrate, a doped conductive layer formed on the tunneling dielectric layer, at least one conductive connection structure, a passivation layer over the doped conductive layer and the at least one conductive connection structure, and a plurality of finger electrodes. The doped conductive layer has a plurality of protrusions arranged along a first direction, and each protrusion extends along a second direction perpendicular to the first direction. The at least one conductive connection structure is formed between two adjacent protrusions and connected with sidewalls of the two adjacent protrusions. Each finger electrode of the plurality of finger electrodes extends along the second direction to penetrate the passivation layer and connect to a respective protrusion.

A solar cell, including a crystalline silicon substrate; a first passivation contact step provided on a surface of the crystalline silicon substrate; a second passivation contact step provided on a surface of the first passivation contact step away from the crystalline silicon substrate and located corresponding to an electrode; a first passivation antireflection step provided on the surface of the first passivation contact step away from the crystalline silicon substrate and not in contact with the second passivation contact step; a second passivation antireflection step provided on a surface of the second passivation contact step away from the first passivation contact step; and the electrode including a side in contact with the first passivation contact step and another side penetrating through the second passivation contact step and the second passivation antireflection step.

A heterojunction solar cell and a manufacturing method thereof are provided. The manufacturing method includes the following steps: A: forming a tunnel oxide layer on a first main surface of a semiconductor substrate; B: forming a first intrinsic polysilicon layer on the tunnel oxide layer; C: forming the first intrinsic polysilicon layer into a P-type polysilicon layer by diffusion annealing; D: removing a borosilicate glass (BSG) layer formed by the diffusion annealing; E: forming a mask layer on the P-type polysilicon layer; F: performing texturing and cleaning on a second main surface of the semiconductor substrate, and removing the mask layer; G: forming a second intrinsic amorphous silicon layer on the second main surface of the semiconductor substrate; and H: forming an N-type oxygen-doped microcrystalline silicon layer on the second intrinsic amorphous silicon layer.

Solar cell and photovoltaic module. Solar cell includes: semiconductor substrate, first passivation layer, and second passivation layer. Semiconductor substrate includes front surface and back surface opposite to each other. Back surface of semiconductor substrate has alternated N-type conductive regions and P-type conductive regions. First passivation layer is disposed on side of P-type conductive region facing away from semiconductor substrate. Length of first passivation layer along first direction is greater than length of P-type conductive region along first direction. Second passivation layer is disposed on side of N-type conductive region facing away from semiconductor substrate. Length of second passivation layer along first direction is smaller than length of N-type conductive region along first direction, first direction is parallel to plane of semiconductor substrate. Solar cell improves light utilization rate on backlight side of solar cell while reducing parasitic absorption of solar cell, thereby improving photoelectric conversion efficiency of solar cell.

A photovoltaic module and a method for manufacturing the photovoltaic module are provided. The photovoltaic module includes a cell module including multiple cell string groups and multiple first connection structures. Each cell string group includes multiple cell strings arranged along a first direction. Each cell string includes multiple solar cells and multiple second connection structures. Second connection structures located on a corresponding solar cell include third connection structures interleaved with fourth connection structures, and each third connection structure is spaced from an adjacent fourth connection structure by a distance L in the first direction. A second connection structure connected to an end of a respective end first connection structure is spaced apart by a distance N in the first direction from an adjacent second connection structure connected to an end of another end first connection structure, and the distance N is less than twice the distance L.

A functional polycrystalline silicon tunneling silicon oxide passivated contact structure (TOPCon) and a preparation method thereof are provided. The functional polycrystalline silicon tunneling silicon oxide passivated contact structure includes a crystalline silicon substrate, a nano silicon oxide, and a functional polycrystalline silicon structure laminated in sequence. The functional polycrystalline silicon structure includes a carbon and nitrogen co-doped polycrystalline silicon layer, or alternating layers of a carbon-doped polycrystalline silicon layer and a nitrogen-doped polycrystalline silicon layer. The present invention uses doping engineering to prepare new polycrystalline silicon with different functions, namely, carbon-doped polycrystalline silicon, nitrogen-doped polycrystalline silicon, and carbon and nitrogen co-doped polycrystalline silicon, and forms a functional polycrystalline silicon structure, exerting different functional effects of carbon and nitrogen doped atoms, and simultaneously realizing passivation in the bulk and surface of the silicon wafer, thereby obtaining a TOPCon structure with ultra-high passivation performance.

Provided is a back-contact solar cell. The back-contact solar cell includes: a substrate having first doped regions, second doped regions and gap regions arranged on the substrate; first doped semiconductor layers located on the corresponding first doped regions; second doped semiconductor layers located on the corresponding second doped regions, a conductive type of a second doping element within the second doped semiconductor layer is different from that of a first doping element within the first doped semiconductor layer; a conductive layer located on part of the gap region; a passivation layer covering the first doped semiconductor layers, the second doped semiconductor layers, the conductive layers and the gap regions; first electrodes in electrical contact with the first doped semiconductor layers; and second electrodes, in electrical contact with the second doped semiconductor layers.