An organic light emitting diode device can be formed by imprinting a material layer to form an array of non-planar features selected from protrusions and via cavities. The array of non-planar features can be imprinted by moving the material layer under a rolling press or under a rolling die that transfers a pattern thereupon. A layer stack including a transparent electrode layer, an organic light emitting material layer, and a backside electrode layer is formed over the array of non-planar features such that convex sidewalls of the organic light emitting material layer contact concave sidewalls of the backside electrode layer. The layer stack can be encapsulated with a passivation substrate. Additionally or alternatively, an array of convex lenses can be imprinted on a transparent material layer to decrease total internal reflection of an organic light emitting diode device.

Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to crystalline semiconductor, including crystalline silicon.

An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

Functional yarn equipped with semiconductor functional elements includes: a plurality of semiconductor functional elements whose electrically conductive directions defined by positive and negative electrodes are aligned and disposed between a pair of conducting wires in which each of the positive electrodes being connected to the conducting wire and each of the negative electrodes being connected to the conducting wire; an element mounting region consisting of conducting wire portions on which a plurality of the semiconductor functional elements are disposed; a conducting wire region consisting of only conducting wire portions and an insulating member that covers the surface of at least one of the pair of conducting wire portions of the conducting wire region.

After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and interior surfaces of the cracks. The passivation layer is deposited in a manner such that that the cracks in the absorber layer are fully passivated by the passivation layer. An emitter layer is then formed over the passivation layer to pinch off upper portions of the cracks, leaving voids in lower portions of the cracks.

The disclosure provides a photo-detection device for use in long-wave infrared detection and a method of fabrication. The device comprises a GaSb substrate, a photo absorbing layer comprising InAs/InAsSb superlattice type-II, a barrier layer comprising AlAsSb, and a contact layer comprising InAs/InAsSb superlattice type-II. The barrier layer is configured to allow minority carrier holes current flow while blocking majority carrier electrons current flow between the photo-absorbing and contact layers. The disclosure further provides a method of producing the photo-detector using photolithography which includes selective etching of the contact layer that stops on the top of the barrier so no etching is made to the barrier layer so the barrier may operate as a passivator too. The disclosure presents an x-ray and photoluminescence results for InAs/InAsSb superlattice type-II material. Also present a measurement of a single element, Long-Wave photo-detector, showing very low dark current and very high Quantum efficiency, as predicted.

An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.

In an avalanche photodiode provided with a substrate including a first electrode and a first semiconductor layer, formed of a first conductivity type, which is connected to the first electrode, the configuration is in such a way that, at least an avalanche multiplication layer, a light absorption layer, and a second semiconductor layer having a bandgap that is larger than that of the light absorption layer are layered on the substrate; a second conductivity type conductive region is formed in the second semiconductor layer; and the second conductivity type conductive region is arranged so as to be connected to a second electrode. With the foregoing configuration, an avalanche photodiode having a small dark current and a high long-term reliability can be provided with a simple process. Additionally, the configuration is in such a way that, by removing at least the light absorption layer among the layers which are layered on the peripheral portion, of the substrate, on which the second conductivity type conductive region and the second semiconductor layer around the second conductivity type conductive region are surrounded by that layers, a side face of the light absorption layer is formed. With the configuration, the dark current can be further reduced.

An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.