Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic vehicle and can be used to improve the material properties of metal particle layers. Specific formulations have been developed to be screen-printed directly onto a dried metal particle layer and fired to make a fired multilayer stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve adhesion to a substrate. Such pastes can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline silicon back-surface field (BSF), and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include integrated circuits and more broadly, electronic devices.

Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic vehicle and can be used to improve the material properties of metal particle layers. Specific formulations have been developed to be screen-printed directly onto a dried metal particle layer and fired to make a fired multilayer stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve adhesion to a substrate. Such pastes can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline silicon back-surface field (BSF), and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include integrated circuits and more broadly, electronic devices.

A method of forming a fired multilayer stack are described. The method involves the steps of a) applying a wet metal particle layer on at least a portion of a surface of a substrate, b) drying the wet metal particle layer to form a dried metal particle layer, c) applying a wet intercalation layer directly on at least a portion of the dried metal particle layer to form a multilayer stack, d) drying the multilayer stack, and e) co-firing the multilayer stack to form the fired multilayer stack. The intercalating layer may include one or more of low temperature base metal particles, crystalline metal oxide particles, and glass frit particles. The wet metal particle layer may include aluminum, copper, iron, nickel, molybdenum, tungsten, tantalum, titanium, steel or combinations thereof.

The present invention provides a novel crystalline oxide, a process for producing the crystalline oxides, a conductive paste comprising the crystalline oxides and an article comprising a substrate and an abovementioned conductive paste applied on the substrate.

A solar cell includes a solar cell substrate including a principal surface on which a p-type surface and an n-type surface are exposed, a p-side electrode formed on the p-type surface and including a first linear portion linearly extending in a first direction, and an n-side electrode formed on the n-type surface and including a second linear portion linearly extending in the first direction and arranged next to the first linear portion in a second direction orthogonal to the first direction. Corners of a tip end of at least one of the first and second linear portions are formed in a chamfered shape.

Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.

There is provided a photovoltaic device (100) having a substrate (10), i-type amorphous layers (16i, 18i) formed over a region of at least a part of a back surface of the substrate, and an i-type amorphous layer (12i) formed over a region of at least a part of a light-receiving surface of the substrate (10); and characterized in that electrodes (24n, 24p) are provided on the back surface and no electrode is provided on the light-receiving surface, and an electrical resistance per unit area of the back surface side i-type amorphous layers is lower than an electrical resistance per unit area of the light-receiving surface side i-type amorphous layer.

The invention relates to a device for interconnecting photovoltaic cells having contacts on their back side, comprising at least one layer of a woven produced from electrically insulating fibers, comprising at least one thread or tape section made of an electrically conductive material woven with said fibers and arranged so as to be flush with the surface of at least one region of the woven in order to form an electrical contact region intended to be connected to a contact pad located on the back side of a cell. The invention also relates to a module of interconnected photovoltaic cells having contacts on the back side, comprising an interconnecting device arranged along the back side of the cells, and a process for manufacturing such a module.

Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to crystalline semiconductor, including crystalline silicon.

After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and interior surfaces of the cracks. The passivation layer is deposited in a manner such that that the cracks in the absorber layer are fully passivated by the passivation layer. An emitter layer is then formed over the passivation layer to pinch off upper portions of the cracks, leaving voids in lower portions of the cracks.