A solar cell element comprises a silicon substrate, a passivation layer, a first conductive portion, an electrode, and a second conductive portion. The silicon substrate has a plurality of recessed portions in one main surface. The passivation layer is located on the one main surface and has holes in positions corresponding to the recessed portions. The first conductive portion is located in each of the holes. The electrode is connected to the first conductive portion while being located on the passivation layer, and contains aluminum. The second conductive portion is connected to each of the silicon substrate and the first conductive portion while being located in a region in each of the recessed portions, and contains aluminum and silicon. A void in which the second conductive portion is not located is present in the region in each of the recessed portions.

Fabrication methods for forming self aligned contacts for back contact solar cells are provided.

Systems and methods for fabricating a photovoltaic structure are provided. During fabrication, a patterned mask is formed on a first surface of a multilayer body of the photovoltaic structure, with openings of the mask corresponding to grid line locations of a first grid. Subsequently, a core layer of the first grid is deposited in the openings of the patterned mask, and a protective layer is deposited on an exposed surface of the core layer. The patterned mask is then removed to expose the sidewalls of the core layer. Heat is applied to the protective layer such that the protective layer reflows to cover both the exposed surface and sidewalls of the core layer.

Provided is a solar cell that can suppress loss of power generation performance of a solar cell module when shaded and a solar cell module having the solar cell. An n-type low-doped region and a first main-surface side highly doped region, which has an n-type dopant concentration higher than that in the n-type low-doped region, are provided in an n-type crystalline silicon substrate. The first main-surface side highly doped region is arranged between the n-type low-doped region and a p-type amorphous silicon layer.

Back side connection layer for a photo-voltaic module with a plurality of PV-cells (1, 2). The PV-cells (1, 2) are of a type having a plurality of back side contacts (11, 12). A by-pass diode connection path (6) is formed in the back side connection layer (3) along an edge direction of two adjacent cells (1, 2) with a straight or meandering pattern around outer contacts (4, 5) of the plurality of back side contacts (11, 12) of the two adjacent cells (1, 2).

A solar cell includes: first and second conductivity type diffusion layers which are formed on a backside of a light-receiving surface of a substrate, first and second electrode portions, first and second electrode line portions, and first and a second electrode bus bar portions; a first insulator film which is formed to cover a side portion and a top of the second electrode portion in an intersection region of the second electrode portion and the first electrode bus bar portion, a second insulator film which is formed to cover a side portion and a top of the first electrode portion in an intersection region of the first electrode portion and the second electrode bus bar portion, wherein the second electrode portion is formed continuously in a line shape under the first insulator film, and the first electrode portion is formed continuously in a line shape under the second insulator film.

Monolithic tandem chalcopyrite-perovskite photovoltaic devices and techniques for formation thereof are provided. In one aspect, a tandem photovoltaic device is provided. The tandem photovoltaic device includes a substrate; a bottom solar cell on the substrate, the bottom solar cell having a first absorber layer that includes a chalcopyrite material; and a top solar cell monolithically integrated with the bottom solar cell, the top solar cell having a second absorber layer that includes a perovskite material. A monolithic tandem photovoltaic device and method of formation thereof are also provided.

Solar cells having a plurality of sub-cells coupled by metallization structures having a metal bridge, and singulation approaches to forming solar cells having a plurality of sub-cells coupled by metallization structures, are described. In an example, the metal bridge can provide structural support and provide for an electrical connection between a first contact pad and a first busbar. Adjacent ones of the singulated and physically separated semiconductor substrate portions have a groove there between and where the metal bridge can be perpendicular to the groove. The solar cell can include a first contact pad adjacent to a second contact pad.

A photovoltaic device (e.g., solar cell) includes: a front substrate (e.g., glass substrate); a semiconductor absorber film; a back contact including a first conductive layer of or including copper (Cu) and a second conductive layer of or including molybdenum (Mo); and a rear substrate (e.g., glass substrate). A selenium blocking layer is provided between at least the Cu inclusive layer and the Mo inclusive layer.

Provided is a solar battery cell with low price, high reliability, and high conversion efficiency. A manufacturing method for the solar battery cell including the following processes. That is: forming and laminating a second conductive-type layer and an antireflection film on a first conductive-type semiconductor substrate; applying a conductive paste containing a conductive particle and a glass frit to a predetermined position of the antireflection film; firing the semiconductor substrate with the conductive paste applied thereto; and forming an electrode penetrating the antireflection film and electrically connected to the second conductive-type layer. The semiconductor substrate with the conductive paste applied thereto is consecutively subjected to heat treatment just after the firing instead of being returned to room temperature.