A photovoltaic device including a single junction solar cell provided by an absorption layer of a type IV semiconductor material having a first conductivity, and an emitter layer of a type III-V semiconductor material having a second conductivity, wherein the type III-V semiconductor material has a thickness that is no greater than 50 nm.

A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

A preparation method for an N-type TOPCon cell comprising 1) texturing an N-type silicon wafer with an alkaline solution; 2) performing boron diffusion and laser lightly-doping on a front face of the wafer to form a lightly-doped region, and performing re-diffusion to form a front mask; 3) polishing a back face of the wafer; 4) performing three-in-one multi-layer thin film deposition on the back face of the wafer, to grow a tunneling silicon oxide thin film layer, a doped amorphous silicon thin film layer, and a back mask; 5) performing high-temperature annealing under a preset high-temperature condition to form a doped polysilicon layer and activate doped phosphorus; 6) cleaning the front mask on the front face and back mask on the back face of the wafer; 7) depositing passivation films on the front face and back face of the N wafer; and 8) printing and sintering.

A solar cell and a method for preparation the solar cell are provided. The solar cell includes a semiconductor substrate, a hole transport layer and an electronic transport layer, a first passivation layer and a second passivation layer. The semiconductor substrate includes a first surface and a second surface opposite to each other. The hole transport layer and the electronic transport layer are disposed on the first surface at interval. A material of the hole transport layer includes vanadium oxide, and a material of the electronic transport layer includes titanium oxide. The first passivation layer is located on a surface of the hole transport layer away from the semiconductor substrate. A surface of the first passivation layer away from the semiconductor substrate, a surface of the electronic transport layer away from the semiconductor substrate, and the first surface are all covered by the second passivation layer.

A jettable etchant composition includes 1 to 90 wt % active ingredient, and a remainder containing any combination of the following: 10 to 90 wt % solvent, 0 to 10 wt % reducing agents, <1 to 20 wt % pickling agent, 0 to 5 wt % surfactant, and 0 to 5 wt % antifoam agent. The composition can also include a soluble compound containing at least one element which when dissolved has a higher standard electrode potential than a metal to be etched or a soluble compound containing a group IA element, and a soluble platinum group metal. An ink composition can include a group VA compound or a group IIIA compound in a solvent system formulated to be jettable on a surface at a drop volume of about 5 to about 10 picoliters and to achieve a final sheet resistance of less than about 20 / of the surface upon activation.

Discussed is a solar cell including a single crystalline semiconductor substrate having a first transparent conductive oxide layer positioned on a non-single crystalline emitter layer; a second transparent conductive oxide layer positioned over a rear surface of the single crystalline semiconductor substrate; a first electrode part including a first seed layer directly positioned on the first transparent conductive oxide layer; and a second electrode part including a second seed layer directly positioned on the second transparent conductive oxide layer, wherein the first transparent conductive oxide layer and the first seed layer have different conductivities, and wherein the second transparent conductive oxide layer and the second seed layer have different conductivities.

A sample transfer system includes a sample-mounting member mounting a sample thereonto; and a sample-moving device lifting the sample to move the sample between the sample-mounting member and another location, wherein the sample-mounting member comprises: a first predetermined sample-mounting region mounting the sample; and a recessed part on or around a side of the first predetermined sample-mounting region, wherein the sample-moving device comprises a first sample-holding device, the first sample-holding device comprising: a sample-holding surface facing the sample to be lifted; a first contact member contacting with part of the sample; and a movement mechanism moving the first contact member in a direction along the sample-holding surface, and wherein part of the contact member enters the recessed part when the first sample-holding device is brought in proximity to the first predetermined sample-mounting region, the part of the contact member moving within the recessed part by operating the movement mechanism.

A manufacturing method includes steps of forming a texture on a surface of a single-crystalline silicon substrate, cleaning the surface of the single-crystalline silicon substrate using ozone, depositing an intrinsic silicon-based layer on the texture on the single-crystalline silicon substrate, and depositing a conductive silicon-based layer on the intrinsic silicon-based layer, in this order. The single-crystalline silicon substrate before deposition of the intrinsic silicon-based layer has a texture size of less than 5 m. A recess portion of the texture has a curvature radius of less than 5 nm. After deposition of at least a part of the intrinsic silicon-based layer and before deposition of the conductive silicon-based layer, the intrinsic silicon-based layer is subjected to a plasma treatment in an atmosphere of a gas mainly composed of hydrogen.

The present invention relates to a plasma texturing method for silicon based solar cells and the nanostructured silicon solar cells produced thereof. The silicon based solar cell comprises a silicon substrate having in at least part of its surface conical shaped nanostructures having an average height between 200 and 450 nm and a pitch between 100 and 200 nm, thereby achieving low reflectance and minimizing surface charge recombination.

A solar cell element comprises a silicon substrate, a passivation layer, a first conductive portion, an electrode, and a second conductive portion. The silicon substrate has a plurality of recessed portions in one main surface. The passivation layer is located on the one main surface and has holes in positions corresponding to the recessed portions. The first conductive portion is located in each of the holes. The electrode is connected to the first conductive portion while being located on the passivation layer, and contains aluminum. The second conductive portion is connected to each of the silicon substrate and the first conductive portion while being located in a region in each of the recessed portions, and contains aluminum and silicon. A void in which the second conductive portion is not located is present in the region in each of the recessed portions.