A process for manufacturing a bifacial photovoltaic cell, comprising the steps: coating a substrate with a boron containing layer; forming a cap layer over the boron containing layer which is on the second surface of the substrate; removing the boron containing layer from the surfaces of the substrate which are not covered with a cap layer; effecting the deposition of a phosphorous containing layer on the surfaces of the substrate which are not covered by the cap layer, and effecting diffusion of the phosphorous and the boron into the substrate; removing the phosphorous containing layer; texturing the substrate where there is no cap layer; effecting the deposition of a phosphorous containing layer on the first surface of the substrate and effecting diffusion of phosphorous into the substrate to form a second n-doped layer; and forming a passivating and/or antireflective coating layer covering the n-doped layer on the substrate's first surface.

The present invention relates to a method for producing solar wafers textured at least on one side, wherein in a first method step, sawn solar wafers with sawing damage are provided, and at the end of the last method step textured solar wafers with different size types of large and small pyramids are provided, and wherein the textured solar wafers can then be further processed to produce solar cells. The problem addressed by the present invention is that of providing an improved texturing method within the framework of the technology for the production of solar cells. This problem is solved by a method for producing textured solar wafers wherein in the first texture etching step the large pyramids are created in a low surface area density such that at the end of the method less than 30% of the textured surface of the solar wafer is occupied by the large pyramids; and in the second texture etching step the small pyramids are produced with a large surface area density.

A solar cell, including: a semiconductor substrate including front and rear surfaces opposite to each other, P-type and N-type conductive regions are arranged in an alternating manner on the rear surface, and gap regions are formed between adjacent P-type and N-type conductive regions, a first notch region is formed by recessing between the P-type conductive region and the gap region, first texture structure is formed within the first notch region, the first direction is parallel to a direction from the gap region to the P-type conductive region, second texture structure is formed within the gap region, and a shape of the second texture structure is different from the first texture structure; a first passivation layer formed over the front surface; and a second passivation layer formed over the rear surface, the second passivation layer covers the first notch regions, the gap regions and the P-type and N-type conductive regions.

This application provides a solar cell, a preparation method therefor, and a photovoltaic module. In one aspect, a solar cell includes a silicon substrate, and a low-absorption coefficient layer arranged on a light-receiving surface of the silicon substrate. The low-absorption coefficient layer and the light-receiving surface of the silicon substrate have a same conductivity type. An absorption coefficient of the low-absorption coefficient layer is less than an absorption coefficient of the silicon substrate in a wavelength band of less than or equal to 400 nm. A thickness of the low-absorption coefficient layer ranges from 15 to 200 nm. The low-absorption coefficient layer is in contact with the silicon substrate.

Some embodiments of the present disclosure provide an N-type TOPCon cell with double-sided aluminum paste electrodes, and a preparation method therefor. The front side of the cell is provided with a front-side silver main grid and a front-side aluminum fine grid, and the back side is provided with a back-side silver main grid and a back-side aluminum fine grid. The method for preparing the cell includes: texturing.fwdarw.B diffusion.fwdarw.BSG removal.fwdarw.alkali polishing.fwdarw.depositing a tunnel oxide layer and a polysilicon layer on a back side of a substrate by means of LPCVD.fwdarw.P diffusion on the back side.fwdarw.PSG removal.fwdarw.plating removal.fwdarw.deposition of an AlO.sub.x preparatory layer and a first SiN.sub.xH.sub.y preparatory layer on the front side.fwdarw.deposition of a second preparatory layer SiN.sub.xH.sub.y on the back side.fwdarw.UV laser ablation on the front side of the substrate and the back side of the substrate.fwdarw.screen printing.

A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.

A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a substrate having a light-receiving surface and a back surface. The solar cell can include a first semiconductor region of a first conductivity type disposed on a first dielectric layer, wherein the first dielectric layer is disposed on the substrate. The solar cell can also include a second semiconductor region of a second, different, conductivity type disposed on a second dielectric layer, where a portion of the second thin dielectric layer is disposed between the first and second semiconductor regions. The solar cell can include a third dielectric layer disposed on the second semiconductor region. The solar cell can include a first conductive contact disposed over the first semiconductor region but not the third dielectric layer. The solar cell can include a second conductive contact disposed over the second semiconductor region, where the second conductive contact is disposed over the third dielectric layer and second semiconductor region. In an embodiment, the third dielectric layer can be a dopant layer.

A method for improving alignment between a selective emitters and metal printing, including: providing silicon wafer including first edge and midline parallel to the first edge; texturing and diffusing surface of the silicon wafer; and illuminating the surface of the silicon wafer by laser spots to form the SE. Multiple laser spots are arranged between the first edge and the midline to form spot rows, extension directions of the spot rows are parallel to the first edge, M spot rows are arranged and M is a positive integer and M>1. The M spot rows include N sub-spot regions, N is a positive integer and 1<NM, the sub-spot regions include at least one spot row, and areas of the laser spots in each sub-spot region are equal. The areas of the laser spots in different sub-spot regions from the midline pointing to the first edge gradually increases.

Provided are a pre-textured silicon wafer and a preparation method thereof, a textured wafer, and a solar cell. The pre-textured silicon wafer includes a substrate layer and a pre-textured layer provided on a surface of at least one side of the substrate layer. The pre-textured layer includes a plurality of protrusions, each protrusion is in a shape of a quadrangular frustum pyramid, and a length of a bottom edge of the protrusion ranges from 2 m to 8 m.

Provided are a pre-textured silicon wafer and a preparation method thereof, a textured wafer, and a solar cell. The pre-textured silicon wafer includes a substrate layer and a pre-textured layer provided on a surface of at least one side of the substrate layer. The pre-textured layer includes a plurality of protrusions, each protrusion is in a shape of a quadrangular frustum pyramid, and a length of a bottom edge of the protrusion ranges from 2 m to 8 m.