The present disclosure relates to the technical field of photovoltaics, and in particular, to a segmented solar cell, a method for forming the same, and a photovoltaic module. The segmented solar cell is formed by cutting a solar cell, and the segmented solar cell includes a substrate and a cutting surface formed by cutting a solar cell to form the segmented solar cell. The cutting surface exposes a cross section of the substrate. At least part of the cutting surface includes a first texture structure, the first texture structure includes polygonal portions, and at least one polygonal portion of the polygonal portions partially overlaps with at least one neighboring polygonal portion of the polygonal portions. According to the present disclosure, it is conducive to at least improving performance of the segmented solar cell and the photovoltaic module.

The present disclosure relates to the technical field of photovoltaics, and in particular, to a segmented solar cell, a method for forming the same, and a photovoltaic module. The segmented solar cell is formed by cutting a solar cell, and the segmented solar cell includes a substrate and a cutting surface formed by cutting a solar cell to form the segmented solar cell. The cutting surface exposes a cross section of the substrate. At least part of the cutting surface includes a first texture structure, the first texture structure includes polygonal portions, and at least one polygonal portion of the polygonal portions partially overlaps with at least one neighboring polygonal portion of the polygonal portions. According to the present disclosure, it is conducive to at least improving performance of the segmented solar cell and the photovoltaic module.

The present disclosure relates to a device that includes a silicon layer, a dielectric layer having a thickness, a self-assembled monolayer (SAM) having a thickness, and a layer constructed of a semiconductor, where the dielectric layer is positioned between the SAM and the silicon layer and the SAM is positioned between the layer comprising the semiconductor and the silicon layer. The SAM includes a plurality of imperfections that pass through the thickness of the SAM, the dielectric layer includes a plurality of holes that pass through at least a portion of the thickness of the dielectric layer, and the imperfections and the holes are substantially aligned to form a plurality of continuous channels and at least a portion of the channels are at least partially filled with the semiconductor, such that the channels are capable of charge transport between the silicon layer and the layer comprising the semiconductor.

A bonded semiconductor light-receiving device including an epitaxial layer to serve as a device-functional layer, and a support substrate made of a material different from that of the device-functional layer and bonded to the epitaxial layer via a bonding material layer. The device-functional layer has a bonding surface with an uneven pattern formed thereon.

The disclosure discloses a solar cell and a preparation method for a solar cell. The preparation method for a solar cell comprises: sequentially forming a tunnel silicon oxide layer, an N-type doped polysilicon layer, and a front metal layer in an entire fashion on a front surface of a P-type silicon substrate; subjecting the entire front metal layer to a photoetching process to form a patterned front fine gate electrode; subjecting the tunnel silicon oxide layer and the N-type doped polysilicon layer in a region not covered by the front fine gate electrode to chemical etching to form a local tunnel silicon oxide layer and a local N-type doped polysilicon layer, wherein the widths of the local tunnel silicon oxide layer and the local N-type doped polysilicon layer are the same as the width of the front fine gate electrode. The preparation method may achieve an automatic and precise alignment of the front fine gate electrode with a local tunnel oxide passivated layer and a local polysilicon layer, thereby effectively reducing a difficulty in a preparation process of a local passivated contact emitter while ensuring the efficiency of the solar cell.

The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

A single-photon detection element includes a substrate including a first surface and a second surface located opposite to each other, and a plurality of plasmonic nanopatterns provided on the second surface, wherein the substrate includes a high-concentration doping region provided adjacent to the first surface, a substrate region provided between the high-concentration doping region and the plurality of plasmonic nanopatterns, and a first well provided between the substrate region and the high-concentration doping region.

A single-photon detection element includes a substrate including a first surface and a second surface located opposite to each other, and a plurality of plasmonic nanopatterns provided on the second surface, wherein the substrate includes a high-concentration doping region provided adjacent to the first surface, a substrate region provided between the high-concentration doping region and the plurality of plasmonic nanopatterns, and a first well provided between the substrate region and the high-concentration doping region.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A P-type emitter region is disposed on the back surface of the substrate. An N-type emitter region is disposed in a trench formed in the back surface of the substrate. An N-type passivation layer is disposed on the N-type emitter region. A first conductive contact structure is electrically connected to the P-type emitter region. A second conductive contact structure is electrically connected to the N-type emitter region and is in direct contact with the N-type passivation layer.

Solar cell and photovoltaic module. Solar cell includes: semiconductor substrate, first passivation layer, and second passivation layer. Semiconductor substrate includes front surface and back surface opposite to each other. Back surface of semiconductor substrate has alternated N-type conductive regions and P-type conductive regions. First passivation layer is disposed on side of P-type conductive region facing away from semiconductor substrate. Length of first passivation layer along first direction is greater than length of P-type conductive region along first direction. Second passivation layer is disposed on side of N-type conductive region facing away from semiconductor substrate. Length of second passivation layer along first direction is smaller than length of N-type conductive region along first direction, first direction is parallel to plane of semiconductor substrate. Solar cell improves light utilization rate on backlight side of solar cell while reducing parasitic absorption of solar cell, thereby improving photoelectric conversion efficiency of solar cell.