Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

There is provided an imprint material that allows a resin film to be readily released from a mold at the time of mold release after curing, that is, an imprint material that forms a film having a low mold release property as well as high transparency, high scratch resistance, and a high fingerprint wiping-off property; and a film which is formed from the material and to which a pattern is transferred. An imprint material including: a (A) component: a compound having a propylene oxide unit and two polymerizable groups or a compound having a propylene oxide unit, an ethylene oxide unit, and two polymerizable groups; a (B) component: a silicone compound; and a (C) component: a photopolymerization initiator.

There is provided a method of producing a photovoltaic device comprising a photoactive region comprising a layer of perovskite material, wherein the layer of perovskite material is disposed on a surface that has a roughness average (R.sub.a) or root mean square roughness (R.sub.ms) of greater than or equal to 50 nm. The method comprises using vapour deposition to deposit a substantially continuous and conformal solid layer comprising one or more initial precursor compounds of the perovskite material, and subsequently treating the solid layer with one or more further precursor compounds to form a substantially continuous and conformal solid layer of the perovskite material on the rough surface. There is also provided a photovoltaic device comprising a photoactive region comprising a layer of perovskite material disposed using the method.

A solar cell, a preparation method thereof, a photovoltaic module, and a photovoltaic system, wherein the solar cell includes a substrate and a first tunnel oxide layer and a passivation medium layer sequentially stacked on a first surface of the substrate. The first tunnel oxide layer is at least partially in contact with the first surface. The passivation medium layer includes at least a transparent conductive oxide layer.

A cell assembly includes a silicon substrate; a first doped region and a second doped region, having opposite polarities. The first doped region is an N-type doped region; the first doped region includes a first doped layer, a passivation layer, and a second doped layer; the passivation layer of the first doped region is provided on the first doped layer of the first doped region; and a conductive channel is formed in the passivation layer of the first doped region.

A manufacturing method for a solar cell includes: providing a P-type silicon wafer, the P-type silicon wafer being provided with a first surface and a second surface opposite to the first surface; sequentially depositing an oxide layer, a doped amorphous silicon film layer, and a silicon oxide mask layer on the first surface of the P-type silicon wafer; and removing the oxide layer, the doped amorphous silicon film layer, and the silicon oxide mask layer coated on the second surface. According to the manufacturing method, the surface texture uniformity of the front surface of a cell piece is can be further effectively improved, and the appearance of the front surface of the cell is improved, and thus, the cell efficiency and the product yield of the solar cell are improved. The present application also relates to a corresponding solar cell.

A solar cell and a photovoltaic module is disclosed. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

A solar cell according to an embodiment includes a first electrode being transparent, a first semiconductor layer on the first electrode, a second semiconductor layer on the first semiconductor layer, and a second electrode being transparent on the second semiconductor layer, wherein grooves exist regularly on a surface of the first semiconductor layer facing a side of the second semiconductor layer.

Photoelectric conversion efficiency is to be increased. A solid-state imaging device includes: a semiconductor substrate including a first surface as a light receiving surface, and an uneven structure unit provided in the first surface; a photoelectric conversion unit that is provided in the semiconductor substrate, and performs photoelectric conversion to generate electric charge corresponding to an amount of received light; and a reflective portion that is provided in the semiconductor substrate so as to extend substantially parallel to the first surface, and reflects light that has passed through the first surface.

The present application relates to a solar cell, a photovoltaic module, and a photovoltaic system. The solar cell includes an n-type semiconductor substrate, a first tunneling passivation structure, a second tunneling passivation structure, a third tunnel layer, and a third passivation layer. The n-type semiconductor substrate includes a first surface and a second surface opposite to each other. The second surface includes a passivation contact region and a passivation region adjacent to each other. The first tunneling passivation structure includes a first tunnel layer and a first passivation contact layer stacked in a direction away from the semiconductor substrate. The second tunneling passivation structure includes a second tunnel layer and a second passivation contact layer stacked on the passivation contact region. The third tunnel layer and the third passivation layer are stacked on the passivation region of the second surface.