A solar cell and a photovoltaic module are disclosed, including: a substrate; a tunneling dielectric layer and a doped conductive layer disposed on the substrate, the tunneling dielectric layer being disposed between the doped conductive layer and a surface of the substrate, the doped conductive layer having a N-type or P-type doping element and having a plurality of first heavily doped regions spaced apart from each other and extending in a first direction, a doping concentration in the first heavily doped regions being greater than that in other regions of the doped conductive layer; a passivation layer disposed on a surface of the doped conductive layer facing away from the substrate; and a plurality of electrodes spaced apart from each other, extending in a second direction and penetrating the passivation layer to contact the doped conductive layer, at least two first heavily doped regions contacting a same electrode.

A solar cell and a photovoltaic module including the same are provided. The solar cell includes a substrate having a first surface and a second surface opposite to each other; a first passivation stack disposed on the first surface and including a first oxygen-rich dielectric layer, a first silicon-rich dielectric layer, a second oxygen-rich dielectric layer, and a second silicon-rich dielectric layer that are sequentially disposed in a direction away from the first surface, wherein an atomic fraction of oxygen in the first oxygen-rich dielectric layer is less than an atomic fraction of oxygen in the second oxygen-rich dielectric layer; a tunneling oxide layer disposed on the second surface; a doped conductive layer disposed on a surface of the tunneling oxide layer; and a second passivation layer disposed on a surface of the doped conductive layer.

A solar cell for achieving an increase in performance. The solar cell is a back junction solar cell comprising a semiconductor substrate, first semiconductor layers stacked in a first region which is a part of the back side of the semiconductor substrate, and second semiconductor layers stacked in a second region which is another part of the back side of the semiconductor substrate. In the second region, the first semiconductor layers are present in some parts between the semiconductor substrate and the second semiconductor layers, wherein the first semiconductor layers comprise sea shapes in a sea-island structure.

A solar cell for achieving an increase in performance. The solar cell is a back junction solar cell comprising a semiconductor substrate, first semiconductor layers stacked in a first region which is a part of the back side of the semiconductor substrate, and second semiconductor layers stacked in a second region which is another part of the back side of the semiconductor substrate. In the second region, the first semiconductor layers are present in some parts between the semiconductor substrate and the second semiconductor layers, wherein the first semiconductor layers comprise sea shapes in a sea-island structure.

A tandem photovoltaic device includes a silicon photovoltaic cell having a silicon layer, a perovskite photovoltaic cell having a perovskite layer, and an intermediate layer between a rear side of the perovskite photovoltaic cell and a front (sunward) side of the silicon photovoltaic cell. The front side of the silicon layer has a textured surface, with a peak-to-valley height of structures in the textured surface of less than 1 m or less than 2 m. The textured surface is planarized by the intermediate layer or a layer of the perovskite photovoltaic cell. Forming the tandem photovoltaic device includes texturing a silicon containing layer of a silicon photovoltaic cell and operatively coupling a perovskite photovoltaic cell comprising a perovskite layer to the silicon photovoltaic cell, thereby forming a tandem photovoltaic device and planarizing the textured surface of the silicon containing layer of the silicon photovoltaic cell.

The present disclosure discloses a solar cell and a manufacturing method therefor. An example method includes providing a semiconductor substrate having a first region and a second region, forming a tunneling passivation layer on at least the first region, and perform wet chemical processing on the first region and the second region to form a first surface structure in the first region and a second surface structure in the second region. An etching rate of etching the first region that is covered by the tunneling passivation layer is different from an etching rate of etching the second region. The first surface structure is different from the second surface structure.

An apparatus and method for a detector are disclosed. The apparatus disclosed contains a non-absorbing layer shaped as one or more pyramids, one or more collector regions, an absorber layer disposed between the one or more collector regions and the non-absorbing layer, a first electrical contact, and a second electrical contact, wherein the absorber layer is configured to absorb photons of incident light and generate minority electrical carriers and majority electrical carriers, wherein the one or more collector regions are electrically connected with the absorber layer and with the first electrical contact for extracting the minority electrical carriers, and the absorber layer is electrically connected with the one or more collector regions and with the second electrical contact to extract the majority electrical carriers.

The present disclosure relates to a solar cell and a solar cell panel including the same, and more particularly, to a solar cell with an improved structure and an improved manufacturing process and a solar cell panel including the same.

An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.