A light emitting arrangement is provided, comprising:a solid state light source (101) adapted to emit primary light (L1); anda wavelength converting member (102) comprising a plurality of wavelength converting domains (102a, 102b, 102c, etc) for converting primary light into secondary light (L2), each wavelength converting domain thereby providing a sub-range of the total light output spectrum, wherein at least some of said wavelength converting domains are arranged as an array and comprise quantum dots, wherein different wavelength converting domains comprise quantum dots having different secondary light emission ranges providing different sub-ranges of the total light output spectrum, and wherein a sub-range provided by each wavelength converting domain overlaps or is contiguous with at least one other sub-range provided by another wavelength converting domain. By arranging materials having different wavelength conversion properties in different domains, preferably in a plane, re-absorption of secondary emission can be avoided.

An optoelectronic semiconductor device comprising: a semiconductor system comprises an upper surface, an interfacial layer comprises a upper interfacial layer on the upper surface of the semiconductor system, and the upper interfacial layer comprises a first wavelength converting material; and a void region in the upper interfacial layer, and a material different from that of the upper interfacial layer fills in the void region.

A light-emitting device includes a light-emitting element and a wavelength conversion layer. The light-emitting element has a top surface, a bottom surface, a side surface, and a first electrical contact formed on the bottom surface. The distance between the top surface and the bottom surface has a first height (h1). The wavelength conversion layer has a first area (A1) located on the top surface of the light-emitting element and a second area (A2) located on the side surfaces and surrounding the first area. The first area has a second height (h2). The second area has a third height (h3) and a second width (w2). The second height (h2) is greater than the second width (w2). The difference of the third height and the sum of the first height and the second height is less than 15 m.

Light emitting diode (LED) devices, components and systems are provided. LED devices include a submount with a plurality of LEDs disposed thereon. The LEDs mounted on a submount can be spaced apart at predetermined dimensions to control the gaps between each of the plurality of LEDs. By controlling the gaps between LEDs the optical output from the LED device can be optimized, including improving emission and/or color uniformity, minimizing or eliminating deadspots in the light emission, and/or minimizing or eliminating an optical cross. A phosphor layer can be disposed on the plurality of LEDs and between the LEDs in the gaps therebetween.

A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps: providing a plurality of semiconductor bodies (1) which are suitable for emitting electromagnetic radiation from a radiation exit face (3), applying the semiconductor bodies (1) to a carrier (2), applying a first mask layer (4) to regions of the carrier (2) between the semiconductor bodies (1), applying a conversion layer (5) to the entire surface of the semiconductor bodies (1) and the first mask layer (4) using a spray coating method, and removing the first mask layer (4), such that in each case a conversion layer (5) arises on the radiation exit faces (3) of the semiconductor bodies (1).

The present invention provides a light-emitting diode (LED) package including: a substrate on which a set of bonding pads are formed; an LED element configured to provide light of a predetermined wavelength region, having a set of chip pads formed on a top surface thereof and being attached on a top surface of the substrate; a set of gold wires connecting the bonding pads of the substrate with the chip pads of the LED element; a phosphor layer formed in a cap shape having side and top portions of a uniform thickness and being configured to surround sides and a top surface of the LED element while being spaced apart therefrom; and a filler disposed to fill a space formed between the phosphor layer and the LED element, wherein the LED element, the gold wires, and the bonding pads of the substrate are under the phosphor layer cap.

Various embodiments may relate to a wavelength conversion element including at least one sintered wavelength converting material, wherein a grid is formed by channels within the sintered wavelength converting material, the channels are at least partially surrounded by the sintered wavelength converting material, the channels reach at least partially through the sintered wavelength converting material in a direction perpendicular or oblique to a main extension direction of the wavelength conversion element, and the channels contain a non-converting sintered separator material.

A light emitting device includes a light emitting element; a light-transmissive member that has a lower surface positioned inside a peripheral edge of an upper surface of the light emitting element in plan view, a first lateral surface extending from the lower surface and having at least one inclined surface that is inclined with respect to the upper surface of the light emitting element, and a second lateral surface positioned above and outside the first lateral surface; a light-transmissive adhesive member positioned inside the second lateral surface in plan view, wherein the adhesive member adheres the upper surface of the light emitting element and the lower surface of the light-transmissive member to each other and covers the first lateral surface; and a light-reflective member covering the second lateral surface.

A semiconductor light emitting device package may include: a light emitting diode (LED) chip having a first surface on which a first electrode and a second electrode are provided, a second surface opposite the first surface, and a plurality of side surfaces, a lateral wavelength conversion layer disposed on a side surface of the plurality of side surfaces of the LED chip, the lateral wavelength conversion layer comprising a wavelength conversion material, and a reflective layer covering the second surface of the LED chip, the reflective layer being configured to reflect light emitted by the LED chip back towards the LED chip.

A light emitting diode (LED) element includes a first conducting layer, a light emitting layer and a second conducting layer. The light emitting layer and the second conducting layer successively are stacked on the first conducting layer. The first conducting layer includes a plurality of first electrodes spaced apart from each other. The second conducting layer includes a plurality of transparent electrodes spaced apart from each other. The light emitting layer includes a plurality of light emitting structures spaced apart from each other and isolated from each other. The light emitting structures are respectively electrically connected with different first electrodes or different second electrodes.