An epitaxy base adapted to form a light-emitting device on is provided. The epitaxy base includes a substrate and a patterned wavelength conversion structure disposed on a part of the substrate and protruding out from the substrate. A light-emitting device including the epitaxy base, a first type semiconductor layer, an emitting layer and a second type semiconductor layer is provided. The first type semiconductor layer is disposed on the substrate and the patterned wavelength conversion structure. The emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the emitting layer.

A light-emitting apparatus includes a base, a first semiconductor radiation emitting diode, having a top surface and a side wall, disposed on the base, a transparent structure disposed on the base and surrounding the side wall and covering the top surface, and a phosphor structure placed within the transparent structure surrounding the side wall and covering the top surface. The first semiconductor radiation emitting diode has a width smaller than that of the base and is configured to emit a light which can be converted into a forward transferred down-converted radiation light and a back transferred down-converted radiation light by the phosphor structure. At least a portion of the forward transferred down-converted radiation light and the back transferred down-converted radiation light are emitted toward the base.

A light emitting diode package structure includes: a first reflecting material layer with through holes; a flip chip on the first reflecting material layer, with the electrodes inlaid in the through holes of the first reflecting material layer; a first transparent material layer surrounding the side surface of the flip chip except the electrodes; a second reflecting material layer surrounding the first transparent material layer, the interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip; and a wavelength conversion material layer covered over the above structure.

A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

An optoelectronic component contains a semiconductor chip (1) and a carrier body (10), which are provided with a transparent, electrically insulating encapsulation layer (3), the encapsulation layer (3) having two cutouts (11, 12) for uncovering a contact area (6) and a connection region (8) of the carrier body, and an electrically conductive layer (14) being led from the contact area (6) over a partial region of the encapsulation layer (3) to the electrical connection region (8) of the carrier body (10) in order to electrically connect the contact area (6) and the electrical connection region (8) to one another. The radiation emitted in a main radiation direction (13) by the semiconductor chip (1) is coupled out through the encapsulation layer (3), which advantageously contains luminescence conversion substances for the wavelength conversion of the emitted radiation.

Disclosed is a method for producing a wavelength conversion element (10) wherein a wavelength conversion layer (100) is provided, the surface thereof is treated with a plasma (50), and the wavelength conversion layer is punched. Also disclosed are a wavelength conversion layer and an optoelectronic component comprising a wavelength conversion layer.

The present invention discloses an embedded white light LED package structure based on a solid-state fluorescence material. In the present invention, the high power blue light chip is directly embedded into and bonded with a groove of the solid-state fluorescence material, and blue light emitted by the chip and yellow and green light obtained by conversion and emitted by the solid-state fluorescence material are blended by using the principle of lenses, to obtain white light. The embedded white light LED package structure based on a solid-state fluorescence material has a simple process, low cost, and high fluorescence efficiency; and blue light does not leak. Heat dissipation can be directly performed by using the solid-state fluorescence material, and heat dissipation performance is desirable. Energy conservation and environmental protection is achieved, and a service life of an LED lighting device is greatly improved.

Light-emitting sub-pixels and pixels for micro-light-emitting diode-based displays are provided. Also provided are methods of fabricating individual sub-pixels, pixels, and arrays of the pixels. The sub-pixels include a double-layered film that includes a coupling layer disposed over a light-emitting diode and a light-emission layer disposed over the coupling layer.

A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2-150.

The invention provides a light generating system (1000) configured to generate system light (1001), wherein the light generating system (1000) comprises a first light generating device (110), wherein: (A) the first light generating device (110) comprises a first light source (10) and a first luminescent converter (210); (B) the first light source (10) comprises a solid state light source, wherein the first light source (10) is configured to generate first light source light (11) having a first light source centroid wavelength (.sub.s,1) selected from the range of 380-420 inn; (C) the first luminescent converter (210) is configured to convert at least part of the first light source light (11) into first converter light (211) having a first converter centroid wavelength (.sub.c, 1) selected from the green-yellow wavelength range; (D) the first light generating device (110) is configured to generate first device light (111) having a spectral power distribution in the wavelength range of 380-780 nm with at least 60% of the spectral power provided by the first light source light (11) and at maximum 40% of the spectral power provided by the first converter light (211).