Provided is a display device including a display panel divided into a plurality of light emitting regions in which a plurality of light emitting elements are disposed and a non-light emitting region adjacent to the light emitting regions, and a color filter layer disposed on the display panel. The color filter layer includes a plurality of filter parts which overlap the light emitting regions, respectively, and in which a single type of color filters is disposed, respectively, and a blocking part which overlaps the non-light emitting region and in which at least two color filters overlap. The blocking part has a thickness of about 3.0 m to about 10.0 m, and an optical density of about 3.0 or more.

In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.

A display device includes a bank including an opening defining pixels, light emitting elements disposed in the pixels, a color conversion layer disposed on the light emitting elements in the opening, a capping layer overlapping the color conversion layer, and a color filter layer disposed on the capping layer. The color filter layer includes a low refractive material.

The present invention relates to a micro-lens array having a color-conversion function and provided in a micro-LED display module, a micro-LED display module including the micro-lens array, and a method for manufacturing the micro-lens array, An micro-lens array according to an embodiment of the present invention is provided in a micro-LED display module in which micro-LEDs themselves are used as light-emitting materials. The micro-lens array may comprise: a body; bank parts formed to be recessed inward from one surface of the body so as to be in one-to-one correspondence with the micro-LEDs, respectively; lens parts formed to protrude from the opposite surface of the body so as to be in one-to-one correspondence with the bank parts, respectively; a partition wall part formed between the bank parts; and a color-conversion part provided in each of the bank parts so as to convert the color of light emitted from each of the micro-LEDs.

A wavelength converter may include a phosphor layer and a filter layer where the filter layer may be directly attached to the phosphor layer. The wavelength converter may have an overall thickness ranging from 20 m to 80 m. A light emitting device assembly and methods for preparing a wavelength converter and methods for preparing a light emitting device assembly are also disclosed.

An optoelectronic semiconductor component includes a primary light source including a carrier and a semiconductor layer sequence mounted thereon and configured to generate primary light, and at least one conversion unit of at least one semiconductor material adapted to convert the primary light into at least one secondary light, wherein the semiconductor layer sequence and the converter unit are separate elements, the semiconductor layer sequence includes a plurality of pixels, the pixels are configured to be controlled electrically independently of each other, the carrier includes a plurality of control units configured to drive the pixels, all pixels of a first group are free of a conversion unit and are configured to emit the primary light, all pixels of a second group of pixels include exactly one conversion unit each and are configured to emit the at least one secondary light.

A semiconductor device structure with overlay marks is provided. The semiconductor device structure includes a substrate, a first light-emitting feature, a first pattern and a second pattern. The first light-emitting feature is disposed on the substrate. The first pattern is disposed on the first light-emitting feature. The second pattern is disposed on the first pattern. The first light-emitting feature is configured to emit a light of a first wavelength. The first pattern has a first transmittance to the light of the first wavelength. The second pattern has a second transmittance to the light of the first wavelength. The first transmittance is different from the second transmittance.

A light emitting device has a substrate, a plurality of light emitting elements mounted on the substrate, a first wavelength conversion members disposed so as to cover at least a portion of the upper surface of at least two light emitting elements of the plurality of light emitting elements, a sealing material sealing the plurality of light emitting elements and the first wavelength conversion members, and a transparent layer formed of a material different from the sealing material and is disposed between the substrate, the plurality of light emitting elements and the first wavelength conversion members, and the sealing material, wherein at least one side of each of the plurality of light emitting elements is disposed so as to face a side surface of the other light emitting element of the at least two light emitting elements, and not cover at least a portion of the non-facing side surfaces thereof.

Light sources including pluralities of light emitting diodes (LEDs) comprise primary and laser-modified device materials in order to achieve tuned color point distributions. The device materials may be down converter materials and/or functional materials. Tuned color point distributions include improved color yields by modifying sections of the device material of the LEDs that skew a baseline color point distribution. Other tuned color point distributions provide a centroid of a tuned color distribution relative to a centroid of a baseline color distribution by modifications to sections of the device material. Modifications to the device material may be conducted by femtosecond laser irradiation. Modifications to down converter materials may include ablation for thickness reduction and/or roughening for a surface topography change and/or three-dimensional shaping for light emission tunability. Modifications to functional materials may include ablation for thickness reduction.

A display device includes: a substrate including a display region and a non-display region; a plurality of pixels provided in the display region, the plurality of pixels including first to third sub-pixels each having a light emitting region configured to light; a first light emitting element that is provided in each of the first and second sub-pixels and emits first color light, and a second light emitting element that is provided in the third sub-pixel and emits second color light; and a color conversion layer corresponding to each of the first and second sub-pixels, the color conversion layer converting the first color light into light of a set color for each corresponding sub-pixel.