Patent classifications
H10H20/8516
LIGHT EMITTING DIODE PACKAGE WITH IMPROVED LIGHT QUALITY
A light emitting diode package is provided. The light emitting diode package includes molded lead frame package. The molded lead frame package includes a lead frame that defines a cavity. The light emitting diode package includes a reflector on the molded lead frame package in a center of a cavity. The light emitting diode package includes chips mounted on the molded lead frame package. The chips are in a symmetric shape around the reflector and the center of the cavity.
METHOD OF PRODUCING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS AND AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
A method of producing an optoelectronic semiconductor component includes providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light, wherein the semiconductor layer sequence is structured into a plurality of pixels driven independently of each other, the carrier including multiple control units that drive the pixels, providing a conversion unit for converting the primary light into secondary light, wherein the conversion unit is grown continuously from semiconductor material, structuring the conversion unit, removing portions of the semiconductor material in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels, wherein at least two conversion units are grown on a common growth substrate, and wherein at least one of the conversion units is structured while still applied to the common growth substrate.
Display device
A display device includes a first substrate, a plurality of light-emitting elements on the first substrate and spaced from each other, wherein each of the plurality of light-emitting elements extends in a thickness direction of the first substrate, a common electrode on the first substrate and the plurality of light-emitting elements, a first insulating layer on the common electrode and the plurality of light-emitting elements, and a first reflective layer on side surfaces of the plurality of light-emitting elements with the first insulating layer therebetween, wherein the common electrode is in contact with a portion of the side surface of each of the plurality of light-emitting elements.
DISPLAY DEVICE
A display device includes a bank including an opening defining pixels, light emitting elements disposed in the pixels, a color conversion layer disposed on the light emitting elements in the opening, a capping layer overlapping the color conversion layer, and a color filter layer disposed on the capping layer. The color filter layer includes a low refractive material.
RED FLIP CHIP LIGHT EMITTING DIODE, PACKAGE, AND METHOD OF MAKING THE SAME
Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.
OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE
In an embodiment a device includes a carrier substrate with a first contact region and therefrom electrically insulated a second contact region, a light-emitting component arranged on the carrier substrate and electrically coupled to the first and second contact regions, a reflective encapsulation arranged on the carrier substrate, wherein the reflective encapsulation surrounds the light-emitting component and forms a cavity above a light-emitting surface of the light-emitting component, and a light conversion layer arranged directly on the light-emitting component in the cavity, wherein the light-emitting surface is smaller than a top surface of the light-emitting component, wherein the light conversion layer is substantially congruent with the light-emitting surface, wherein the cavity has a bottom lying in the same plane as the light-emitting surface, and wherein the cavity has side surfaces which are arranged at least partially at a distance from the light conversion layer so that a gap exists between the light conversion layer and the reflective encapsulation.
WAVELENGTH CONVERTER AND LED DIE FOR CORRECTING EDGE COLOR SHIFT AND METHODS
An LED die, a wafer of LED dies, and methods of manufacture are described. A shaped surface luminance wavelength converter platelet includes a first wavelength converting layer, which has a first concentration of scattering pores. A second wavelength converting layer is disposed over the first wavelength converting layer and has a second concentration of scattering pores with the second concentration of scattering pores being larger than the first concentration of scattering pores.
LED structure and manufacturing method thereof, and LED device
Disclosed are an LED structure, an LED device and a manufacturing method for the LED structure. The LED structure includes a substrate structure including a substrate and a plurality of first stress modulation layers located on the substrate periodically and separately; and a light-emitting unit located on the substrate structure; wherein the substrate structure includes a first region of which upper surface is the first stress modulation layer and a second region of which upper surface is the substrate, and a light-emitting unit located on the first region and a light-emitting unit located on the second region have different light-emitting wavelengths, which realizes a light-emitting unit with two kinds of main light-emitting wavelengths on the same substrate.
Display device with light output patterns adjacent to the active layers for improved output efficiency
A display device comprises a first substrate including a plurality of pixel circuit units, a plurality of light emitting elements in a display area on the first substrate and electrically connected to a corresponding one of the plurality of pixel circuit units, respectively, a plurality of grooves corresponding to partially recessed top surfaces of the plurality of light emitting elements, respectively, and a plurality of light output patterns corresponding to the plurality of light emitting elements, the light output pattern being partially in a corresponding groove of the plurality of grooves, wherein the light output pattern includes a first surface in contact with the light emitting element in the groove, a second surface opposite to the first surface, and a third surface that is a side surface connecting the first surface and the second surface, and the second surface is a curved outer surface.