The present invention relates to a light-emitting diode (LED) structure, which comprises an LED unit. The LED unit is doped with a plurality of fluorescent powders in at least an arbitrary layer on one side of a light-emitting layer. Alternatively, the LED unit includes a plurality of fluorescent powder particles arranged on at least a light-emitting surface of the LED unit. No gel is adopted for disposing or packaging fluorescent powders. Thereby, gel yellowing caused by long-term high-temperature heating of the LED structure will not occur. The yellowing phenomenon will affect the light-emitting efficiency of LED and induce color deviation.

Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

A method of manufacturing a light emitting device including: forming a supporting body on a mounting surface of each of semiconductor light emitting elements; arranging the semiconductor light emitting elements to be spaced apart from each other by a predetermined distance; and forming a wavelength conversion layer to continuously cover an upper surface and side surfaces of at least one of the semiconductor light emitting elements. The forming the wavelength conversion layer includes spraying a slurry provided by mixing particles of a wavelength conversion member and a thermosetting resin in a solvent onto the upper surface and the side surfaces of the semiconductor light emitting element, so that a thickness of the wavelength conversion layer at a lower portion of the side surfaces of the supporting body is smaller than the thickness on the upper surface and the side surfaces of the semiconductor light emitting element.

An optoelectronic device including an array of light-emitting diodes and photoluminescent blocks opposite at least part of the light-emitting diodes, each light-emitting diode having a lateral dimension smaller than 30 m, each photoluminescent block including semiconductor crystals having an average size smaller than 1 m, dispersed in a binding matrix.

An illumination device includes a supporting base, at least two supports and at least two semiconductor light emitting elements. The supports are disposed on the supporting base and coupled to each other. The semiconductor light emitting elements are respectively coupled to the supports. The semiconductor light emitting element includes a transparent substrate and a light emitting diode (LED) structure. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface. At least a part of the light emitted from the LED structure may pass through the transparent substrate and emerge from the second main surface.

Provided is an LED package which is unlikely to cause the attenuation of emitted light from an LED element by bonding wires for electrical connection of the LED element. The LED package includes a board including a pair of connection electrodes formed thereon, an LED element mounted on the board, a bonding wire electrically connecting the LED element to the pair of connection electrodes, and a covering layer containing a phosphor and covering the bonding wire, wherein the phosphor is excited by emitted light from the LED element to emit light having an absorbance in the bonding wire lower than that of the emitted light and a wavelength longer than that of the emitted light.

A method for manufacturing a light-emitting device includes providing a soluble member to cover at least one lateral surface of a light-emitting element. The soluble member includes a material soluble in a first solvent. A light-shielding member is provided to cover at least one lateral surface of the soluble member. The light-shielding member includes a light-shielding resin less soluble in the first solvent than the soluble member. The soluble member is removed with the first solvent. A first light-transmissive member is provided in a space formed by removing the soluble member.

The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 m to 50 m), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.

Packaged LEDs with phosphor films, and associated systems and methods are disclosed. A system in accordance with a particular embodiment of the disclosure includes a support member having a support member bond site, an LED carried by the support member and having an LED bond site, and a wire bond electrically connected between the support member bond site and the LED bond site. The system can further include a phosphor film carried by the LED and the support member, the phosphor film being positioned to receive light from the LED at a first wavelength and emit light at a second wavelength different than the first. The phosphor film can be positioned in direct contact with the wire bond at the LED bond site.

A light emitting device includes a substrate, a conductive electrode connection layer, at least one epitaxial structure and an insulating layer. The substrate had an upper surface and a lower surface opposite to each other. The conductive electrode connection layer is disposed on the upper surface of the substrate and electrically connected with the substrate. The epitaxial structure is disposed on the conductive electrode connection layer and electrically connected with the conductive electrode connection layer, wherein the epitaxial structure has a first peripheral surface. The insulating layer is disposed between the conductive electrode connection layer and the least one epitaxial structure, wherein the insulating layer has a second peripheral surface, and the second peripheral surface is aligned with the first peripheral surface.