Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

The light-emitting device (100) includes a substrate (101) and a plurality of light-emitting sections. A first light-emitting section is made up of LED chips (102) and a first fluorescent-substance-containing resin layer (107), and a second light-emitting section is made up of LED chips (102) and a second fluorescent-substance-containing resin layer (108). The first fluorescent-substance-containing resin layer (107) and the second fluorescent-substance-containing resin layer (108) are provided in a plurality of locations such that the fluorescent-substance-containing resin layers for the different light-emitting sections are adjacently arranged.

A light emitting device package includes substrate; first and second conduction members on the substrate; a light emitting diode on the substrate, the light emitting diode being electrically connected with the first and second conduction members; and a phosphor layer on the light emitting diode.

An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

A substrate for a light emitting element including a resin substrate exhibiting flexibility and a metal wiring portion being formed on at least one surface side of the resin substrate via an adhesive layer, in which a reflective layer composed of a thermosetting resin is disposed between the resin substrate and the adhesive layer, in which the reflective layer contains a light reflective filler at 10% by mass or more and 85% by mass or less and has a reflectance to light at a wavelength of 450 nm of 80% or more.

A light emitting device comprises a package having a recess; a light emitting element mounted in the recess of the package; a light transmissive member provided above the light emitting element; a sealing resin that seals the recess of the package; and a fluorescent material contained in the sealing resin. The fluorescent material is distributed to a side of the light emitting element in a greater amount than to above the light emitting element, a side surface of the light emitting element is exposed to the sealing resin, and a portion of the light transmissive member protrudes from the sealing resin.

There is provided an illumination device (100) comprising: a substrate (104); an optically transmissive first layer (106) arranged on the substrate; a photon emitting layer (108), arranged on the optically transmissive first layer and comprising a photon emitting material configured to receive energy from an energy source and to emit light having a predetermined wavelength; a periodic plasmonic antenna array, arranged on the substrate and embedded within the first layer, and comprising a plurality of individual antenna elements (114) arranged in an antenna array plane, the plasmonic antenna array being configured to support a first lattice resonance at the predetermined wavelength, arising from coupling of localized surface plasmon resonances in the individual antenna elements to photonic modes supported by the system comprising the plasmonic antenna array and the photon emitting layer, wherein the plasmonic antenna array is configured to comprise plasmon resonance modes such that light emitted from the plasmonic antenna array has an anisotropic angle distribution; and wherein the photon emitting layer is arranged at a distance from the antenna array plane corresponding to a location of maximum field enhancement for light out-coupling resulting from the plasmonic-photonic lattice resonances.

A light-emitting device includes a substrate, a light-emitting component, a wavelength conversion component, an adhesive and a reflective layer. The light-emitting component is disposed on the substrate. The wavelength conversion component includes a high-density phosphor layer and a lower-density phosphor layer. The adhesive is formed between the light-emitting device and the high-density phosphor layer. The reflective layer is formed above the substrate and covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion component.

A method and apparatus for measuring color coordinates of a light emitting device. The color coordinate measuring apparatus includes a rail on which a substrate is mounted, the substrate having a plurality of light emitting devices (LEDs) formed thereon, a transfer device disposed under the rail and configured to move toward or away from a target region of the substrate, a plurality of electrode pins disposed on the transfer device and configured to respectively contact electrodes of the plurality of light emitting devices in the target region at the same time when the transfer device approaches the target region, a controller configured to sequentially supply electric power to the plurality of electrode pins, and a measurement unit disposed above the rail and configured to be placed above the target region in which the plurality of electrode pins is brought into contact with the electrodes of the plurality of light emitting devices.

A light emitting device package structure includes at least one light emitting device, a wavelength conversion adhesive layer, and a protection element. The light emitting device has an upper surface, a lower surface opposite to the upper surface, and a side surface connecting the upper surface and the lower surface. The wavelength conversion adhesive layer is disposed on the upper surface of the light emitting device and has a first edge and a second edge opposite to each other. The protection element encapsulates the side surface of the light emitting device and the second edge of the wavelength conversion adhesive layer and exposes the lower surface of the light emitting device. A third edge of the protection element is aligned with the first edge of the wavelength conversion adhesive layer.