With an image sensor in which the amplifier circuit is disposed at each pixel, there is such an issue that the threshold voltage of the transistor fluctuates so that the signal voltage fluctuates because a voltage is continuously applied between the source and the gate of the transistor at all times when using the amorphous thin film semiconductor as the transistor that constitutes an amplifier circuit. The gate-source potential of the TFT that constitutes the amplifier circuit is controlled so that the gate terminal voltage becomes smaller than the source terminal voltage in an integrating period where the pixels accumulate the signals, and controlled so that the gate terminal voltage becomes larger than the source terminal voltage in a readout period where the pixels output the signals.

An imaging array with integrated circuitry for supporting automatic exposure control and a method for using such an imaging array are provided. One or more electrodes are disposed substantially parallel with at least a portion of the array of pixels forming the imaging array and provide capacitively coupling to at least one photodiode electrode.

A radiation detection apparatus includes a plurality of unit structures each having a semiconductor layer that converts radiation into a charge, the unit structures being arranged to form an array, and a coupling member that couples two of the unit structures adjacent to each other in the array. The coupling member is formed from a material capable of being used as a vapor deposition material. Each of the plurality of unit structures further includes a mounting board on which is mounted an integrated circuit that processes a signal based on the charge obtained by the semiconductor layer

An X-ray detector according to an embodiment includes a scintillator array and a photodiode array. In the scintillator array, a plurality of scintillators are arranged in a first direction and a second direction intersecting the first direction. The photodiode array includes photodiodes each of which is installed for a different one of the scintillators and each of which has an active area configured to convert visible light emitted by the scintillator into an electrical signal. The photodiodes are arranged in such a manner that the widths of the active areas are equal to one another in the first direction.

Curved, flexible arrays of radiation detectors are formed by using standard silicon semiconductor processing materials and techniques and additional functionalization through integration of conversion and shielding materials. The resulting flexible arrays can be handled, integrated, further functionalized and deployed for a wide variety of applications where conventional sensors do not provide the desired functionality, form factors and/or reliability. The arrays can be stacked and include multiple types and thicknesses of conversion layers, enabling the detector to simultaneously detect multiple radiation types, and perform complex, simultaneous functions such as energy discrimination, spectroscopy, directionality detection, and particle trajectory tracking of incident radiation.

The present disclosure provides a semiconductor device including: a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer.

The present application discloses a photodetector substrate comprising an array of a plurality of first electrodes; an array of a plurality of second electrodes, and an insulating block. The plurality of first electrodes and the plurality of second electrode are alternately arranged along a first direction, the plurality of first electrodes are disposed spaced apart from the plurality of second electrodes on a same layer; and the insulating block spaces apart at least a pair of adjacent first electrode and second electrode.

The present disclosure relates to an array substrate for an X-ray detector and an X-ray detector including the same. The array substrate is defined as an active area and a pad area, wherein the pad area includes a substrate including a first area and a second area extending from the first area, and a plurality of data lines contacting an upper surface of the substrate and extending toward the second area from the first area, adjacent data lines of the plurality of data lines are spaced apart from each other, the upper surface of the substrate is exposed in a area between the adjacent data lines in the first area of the substrate, and a first insulation film is disposed between the substrate and the data lines in the second area of the substrate, thereby preventing a short-circuit between adjacent data lines due to agglomeration between data lines and an organic layer during cutting.

With an image sensor in which the amplifier circuit is disposed at each pixel, there is such an issue that the threshold voltage of the transistor fluctuates so that the signal voltage fluctuates because a voltage is continuously applied between the source and the gate of the transistor at all times when using the amorphous thin film semiconductor as the transistor that constitutes an amplifier circuit. The gate-source potential of the TFT that constitutes the amplifier circuit is controlled so that the gate terminal voltage becomes smaller than the source terminal voltage in an integrating period where the pixels accumulate the signals, and controlled so that the gate terminal voltage becomes larger than the source terminal voltage in a readout period where the pixels output the signals.

A detector module for detecting photons includes a detector formed from a semiconductive material, the detector having a first surface, an opposing second surface, and a plurality of sidewalls extending between the first and second surfaces, and a guard band coupled to the sidewalls, the guard band having a length that extends about a circumference of the detector, the guard band having a width that is greater than a thickness of the detector such that an upper rim segment of the guard band projects beyond the first surface of the detector, the upper rim segment being folded over a peripheral region of the first surface along the circumference of the detector, the guard band configured to reduce recombinations proximate to the edges of the detector.