A flip-chip image-sensor package includes a substrate, a coverglass, a conductive layer, and an image sensor. The substrate has an aperture therethrough and a first region and a second region each at least partially surrounding the aperture. The aperture has a first width defined by a boundary of the first region, and a second width defined by a boundary of the second region, wherein the second width exceeds the first width. The coverglass spans the aperture and is located on a top surface of the first region. The conductive layer adjoins the substrate. The image sensor is located beneath the coverglass and is electrically connected to the conductive layer.

A backside illumination image sensor that includes a semiconductor substrate with a plurality of photoelectric conversion elements and a read circuit formed on a front surface side of the semiconductor substrate, and captures an image by outputting, via the read circuit, electrical signals generated as incident light having reached a back surface side of the semiconductor substrate is received at the photoelectric conversion elements includes: a light shielding film formed on a side where incident light enters the photoelectric conversion elements, with an opening formed therein in correspondence to each photoelectric conversion element; and an on-chip lens formed at a position set apart from the light shielding film by a predetermined distance in correspondence to each photoelectric conversion element. The light shielding film and an exit pupil plane of the image forming optical system achieve a conjugate relation to each other with regard to the on-chip lens.

A front-side image sensor may include a substrate in a semiconductor material and an active layer in the semiconductor material. The front side image sensor may also include an array of photodiodes formed in the active layer and an insulating layer between the substrate and the active layer.

Provided are an ultrathin digital camera inspired by an eye of an insect, that includes a prism array including a plurality of transmission channels refracting incident light and a micro lens array including micro lenses focusing the light and is implemented so that the respective transmission channels receive visual information on partial regions of an entire field of view (FOV) like a visual organ of the eye of the insect, and a method of manufacturing the same.

A gate electrode of a field effect transistor is formed. Next, an offset spacer film with a double-layer structure including a silicon oxide film as a lower-layer film and a silicon nitride film as an upper-layer film is formed on a sidewall surface of the gate electrode. The silicon nitride film serves as a supply source of an element for terminating dangling bonds of silicon in a device formation region. Next, treatment for leaving the offset spacer film intact or treatment for removing the silicon nitride film of the offset spacer film is performed. Thereafter, a sidewall insulating film is formed on the sidewall surface of the gate electrode.

A method for fabricating a signal-separating CFA includes forming a multi-height CFA on a substrate. The multi-height CFA includes a plurality of tall spectral filters and a plurality of short spectral filters. Each of the tall spectral filters is taller than each of the short spectral filters. The method also includes disposing a spectral-blocking layer on the multi-height CFA, and planarizing the spectral-blocking layer to expose a top surface of each of the plurality of tall spectral filters.

Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.

An image sensor includes a substrate including a first surface and a second surface, a first device isolation layer disposed in the substrate and defining a plurality of pixels in the substrate, and having a lower surface adjacent the first surface of the substrate and an upper surface adjacent the second surface of the substrate. Each of the pixels includes a photoelectric conversion element, a floating diffusion region adjacent the first surface of the substrate, and a grid pattern on the second surface of the substrate. At least one of the grid patterns is not vertically aligned with the first device isolation layer.

A device may include a multispectral filter array disposed on the substrate. The multi spectral filter array may include a first metal mirror disposed on the substrate. The multi spectral filter may include a spacer disposed on the first metal mirror. The spacer may include a set of layers. The spacer may include a second metal mirror disposed on the spacer. The second metal mirror may be aligned with two or more sensor elements of a set of sensor elements.

The present disclosure relates to a stacked SPAD image sensor with a CMOS Chip and an imaging chip bonded together, to improve the fill factor of the SPAD image sensor, and an associated method of formation. In some embodiments, the imaging chip has a plurality of SPAD cells disposed within a second substrate. The CMOS Chip has a first interconnect structure disposed over a first substrate. The imaging chip has a second interconnect structure disposed between the second substrate and the first interconnect structure. The CMOS Chip and the imaging chip are bonded together through along an interface disposed between the first interconnect structure and the second interconnect structure.