Provided is a flexible display apparatus having an improved light extracting efficiency and a method of manufacturing the flexible display apparatus. The flexible display apparatus includes a flexible substrate having a rippled surface, a pixel electrode on the flexible substrate and having a rippled surface, an intermediate layer on the pixel electrode and including a light emission layer, and an opposing electrode facing the pixel electrode. A method of manufacturing the flexible display apparatus includes applying a tensile force to a flexible substrate, forming a pixel electrode on the flexible substrate, removing the tensile force applied to the flexible substrate to form a rippled surface in the pixel electrode, forming an intermediate layer including an light emission layer on the pixel electrode, and forming an opposing electrode facing the pixel electrode.

An electronic device includes a vertical-support-element with first and second edges having first and second reentrant profiles, respectively. The first reentrant profile includes first conformal semiconductor and dielectric layers, and a conformal conductive top-gate. A first electrode contacts a first portion of the first conformal semiconductor layer over the top of the vertical-support-element. A second electrode, adjacent to the first edge, contacts a second portion of the first conformal semiconductor layer not over the vertical-support-element. The second reentrant profile includes a conformal conductive bottom-gate, and second conformal dielectric and semiconductor layers. A third electrode, adjacent to the second edge, contacts the second semiconductor layer not over the vertical-support-element. A fourth electrode, over the vertical-support-element, contacts the second semiconductor layer. The first and second electrodes define a first semiconductor channel of a top-gate transistor, the third and fourth electrodes define a second semiconductor channel of a bottom-gate transistor.

An array substrate, a manufacture method thereof, and a display device with the array substrate are provided. The array substrate includes a substrate; a first gate scanning line; a first gate insulating layer; an active layer; a date scanning line; a pixel electrode formed in a pixel unit defined by the first gate scanning line and the data scanning line and over the data scanning line; and a second gate scanning line formed over or below the first gate scanning line. The second gate scanning line is substantially overlapped with the first gate scanning line in a stacking direction of the array substrate, and is arranged to be insulated from the first gate scanning line, the active layer, the data scanning line, and the pixel electrode, respectively.

Disclosed herein is a thin film transistor array panel, including: an insulating substrate; a gate electrode formed on the insulating substrate; a gate insulating layer formed on the gate electrode; a semiconductor layer formed on the gate insulating layer; a source electrode and a drain electrode formed on the semiconductor layer and the gate insulating layer and facing each other; and a pixel electrode connected to the drain electrode and applied with a voltage from the drain electrode, wherein a thickness of the gate insulating layer which overlaps the drain electrode but does not overlap the semiconductor layer is formed to be thinner than that which overlaps the semiconductor.

There is provided a display device including: a light emitting element; and a drive transistor (DRTr) that includes a coupling section (W1) and a plurality of channel sections (CH) coupled in series through the coupling section (W1), wherein the drive transistor (DRTr) is configured to supply a drive current to the light emitting element.

A field-effect transistor includes a gate electrode to apply a gate voltage, a source electrode and a drain electrode to take electric current out, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements.

There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).

A display apparatus includes a substrate including at least one hole disposed in a hole area of the substrate, a thin film transistor disposed on the substrate, a light-emitting component disposed on the substrate and electrically connected to the thin film transistor, an insulating layer disposed on the substrate, a thin film encapsulation layer disposed on the substrate, and a laser blocking layer. The substrate includes a display area and a non-display area that is disposed between the display area and the hole area. The laser blocking layer is disposed on the insulating layer in the non-display area.

The invention provides a high-precision display device having a reliable top- and single-gate TFT causing less current leakage. Part of a gate line 10 that crosses a semiconductor layer 103 acts as a gate electrode to form a TFT. The semiconductor layer 103 is connected to a data line 20 via a through-hole 140 on one side of the TFT and also connected to a contact electrode 107 via a through-hole 120 on the other side of the TFT. A floating electrode 30 is formed between the TFT and the through-hole 140 or between the TFT and the through-hole 120. The floating electrode 30 is formed on a layer above the semiconductor layer 103 with the use of the same material and at the same time as the gate electrode.

A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.