A semiconductor device includes a first transistor including a first electrode, a first insulating layer above the first electrode, the first insulating layer having a first side wall, a first oxide semiconductor layer on the first side wall, the first oxide semiconductor layer being connected with the first electrode, a first gate electrode, a first gate insulating layer, and a second electrode above the first insulating layer, the second electrode being connected with the first oxide semiconductor layer; and a second transistor including a third electrode, a fourth electrode separated from the third electrode, a second oxide semiconductor layer between the third electrode and the fourth electrode, the second oxide semiconductor layer being connected with each of the third electrode and the fourth electrode, a second gate electrode, and a second gate insulating layer.

The present invention provides an OLED array substrate, a manufacturing method of the same, a display panel, and a display device, and relates to the field of active matrix organic light-emitting diode (AMOLED) display technology. The present invention can solve the problem that turn-on and turn-off of a switching thin film transistor and grayscale control cannot be performed effectively because the switching thin film transistor and a driving thin film transistor are manufactured as thin film transistors having same performance parameters in an existing OLED array substrate. The OLED array substrate according to the present invention includes a switching thin film transistor and a driving thin film transistor, wherein, an S factor of the switching thin film transistor is less than that of the driving thin film transistor.

A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.

A display device includes a pixel circuit disposed on a substrate, and a display element on the pixel circuit. The pixel circuit includes a first thin-film transistor comprising a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, a second thin-film transistor comprising a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer being connected to the first semiconductor layer and the first gate electrode, a first shielding layer overlapping the second semiconductor layer, and a second shielding layer overlapping the second semiconductor layer and stacked on the first shielding layer.

An electronic device is provided. The electronic device includes a substrate, a first active layer, a second active layer, a first gate electrode, a first insulator, a second gate electrode, a second insulator, a first electrode electrically connected to the second active layer, and a second electrode. The first active layer is different from the second active layer in material. The first insulator is disposed between the first active layer and the first gate electrode. The second insulator is disposed between the second active layer and the second gate electrode. The second gate electrode is disposed between the first electrode and the second active layer. The second electrode is overlapped with at least part of the second active layer. The second electrode and the first gate electrode are the same in material.

An electronic device is disclosed, which includes: a substrate, a first active layer, a first gate electrode, a second active layer, a first insulating layer and a second insulating layer. The first active layer is disposed on the substrate. The first gate electrode is disposed on the substrate and overlaps with the first active layer in a normal direction of the substrate. The second active layer is disposed on the substrate, wherein a material of the first active layer is different from a material of the second active layer. The first insulating layer is disposed between the first active layer and the second active layer. The second insulating layer is disposed between the insulating layer and the second active layer.

A substrate assembly includes: a substrate; a first transistor disposed on the substrate, wherein the first transistor includes a first semiconductor layer; and a second transistor disposed on the substrate, wherein the second transistor includes a second semiconductor layer and a drain electrode electrically connected to the second semiconductor layer, and a material of the first semiconductor layer is different from a material of the second semiconductor layer, wherein the first semiconductor layer of the first transistor is electrically insulated from the drain electrode of the second transistor.

A light-emitting device includes a plurality of pixels arranged in a substrate. Each pixel includes a light-emitting element, a driving transistor configured to supply a current to the light-emitting element, and a write transistor configured to supply a signal voltage to a gate of the driving transistor. The driving transistor has an offset structure that includes an insulator between the gate and a semiconductor region forming one of a source and a drain of the driving transistor in an orthogonal projection to a main surface of the substrate.

Provided is a display device. The display device includes a substrate including a display area in which emission areas are arranged, and a non-display area, a circuit layer, and an element layer, and including light-emitting elements respectively located in the emission areas. The circuit layer includes data lines, a first bypass auxiliary line extending in a first direction, and electrically connected to a first data line adjacent to the non-display area in the first direction, a second bypass auxiliary line extending in a second direction, paired with a second data line spaced further apart from the non-display area than the first data line in the first direction, and electrically connected to the first bypass auxiliary line, and a gate initialization voltage line extending in the first direction. Two first bypass auxiliary lines adjacent to each other in the second direction are located adjacent to the gate initialization voltage line.

An array substrate includes: a substrate having a pixel area and a capacitor area; a first thin film transistor disposed in the pixel area on the substrate and including a first active layer, a first gate layer and a first source-drain layer; and a first capacitor including a first plate, a second plate and a first dielectric layer disposed therebetween. The first plate and the second plate are disposed respectively in different layers in the capacitor area. The first dielectric layer includes a first dielectric sub-layer having a greater dielectric constant, and a second dielectric sub-layer that has a less dielectric constant and is disposed on a side of the first dielectric sub-layer close to the first active layer and in the pixel area and the capacitor area.