An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaO.sub.X). The oxide target includes GaO.sub.X, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.

A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.

Displays can be fabricated using driver transistors formed with high quality semiconductor channel materials, and switching transistors formed with low quality semiconductor channel materials. The driver transistors can require high forward current to drive emission of the OLED pixels, but might not require very low leakage current. The switching transistors can require low leakage current to allow the pixel capacitor to retain the signal level for accurate OLED device emission, preventing abnormal displays or cross talks.

The present invention provides a display panel and a display device. In the display panel, edges of multiple rows of pixel units are arranged in a step-like manner, each row of pixel units include a central pixel unit and a marginal pixel unit, each central pixel unit includes first thin film transistors each corresponding to a sub-pixel and having a first semiconductor region; each marginal pixel unit includes second thin film transistors each corresponding to a sub-pixel and having a second semiconductor region; length and width of the first semiconductor region are respectively set to be a first set length and a first set width, length and width of the second semiconductor region are respectively set to be a second set length and a second set width such that brightness of the marginal pixel unit is smaller than brightness of the central pixel unit during display.

A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs,and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing thereof are disclosed. The thin film transistor includes a gate electrode, an insulating layer, an active layer and a source/drain electrode layer, and further includes a light shielding layer, and the light shielding layer is configured to block light from entering the active layer via the insulating layer, and the light shielding layer and the gate electrode are arranged in a same layer and electrically unconnected with each other. The thin film transistor can reduce the light irradiated to the active layer and thus reduce the adverse impact thus incurred.

A display includes a pixel circuit. The pixel circuit includes a light emitting diode, a first transistor, a second transistor and a third transistor. The first transistor includes a first semiconductor layer. The first transistor has a first control terminal, a second terminal, and a third terminal electrically connected to the light emitting diode. The second transistor includes a second semiconductor layer, and is electrically connected to the third terminal. The third transistor is electrically connected to the first control terminal. A material of the first semiconductor layer is different from a material of the second semiconductor layer.

The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same. A display includes a first thin film transistor including a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer.