A semiconductor device includes a substrate; a first electrode layer disposed over the substrate; an interlayer insulating layer having an opening that exposes the first electrode layer; an oxide semiconductor layer formed along a surface of the opening and connected to the first electrode layer; a gate insulating layer formed along a surface of the oxide semiconductor layer; a stacked structure including a first gate electrode layer, a first insulating layer, a second gate electrode layer, and a second insulating layer stacked in a vertical direction while filling a remaining space of the opening in which the oxide semiconductor layer and the gate insulating layer are formed; and a second electrode layer disposed over the stacked structure and the oxide semiconductor layer and connected to the oxide semiconductor layer.

The disclosure relates to the field of display technologies, and in particular, to a thin film transistor, a display panel, and a display apparatus. The thin film transistor includes: an active layer provided on a substrate. The active layer includes a first semiconductor layer, a first barrier layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is located on a side, away from the substrate, of the second semiconductor layer, and a mobility rate of the first semiconductor layer is less than a mobility rate of the second semiconductor layer. A double channel is formed by providing the first barrier layer provided between the first semiconductor layer and the second semiconductor layer, so as to make a threshold voltage Vth positive and improve the mobility rate of the thin film transistor, so that a greater processing Margin may be accommodated, thereby ensuring stability of a device.

A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

A display device includes a pixel including a thin film transistor, and an under layer below the thin film transistor. The thin film transistor includes a first gate electrode, a semiconductor layer and a second gate electrode. The semiconductor layer includes a channel region that overlaps at least one of the first gate electrode and the second gate electrode in a plan view. The channel region curves in a thickness direction of the semiconductor layer. The first gate electrode includes a first edge located on the side of an edge of the channel region in a direction of a channel length. The second gate electrode includes a second edge located on the side of the edge of the channel region. The position of the first edge is different from the position of the second edge in the direction of the channel length.

By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

An electroluminescent (EL) display apparatus and corresponding method of control are provided. A display screen includes gate signal lines which are arranged to intersect source signal lines. A pixel provided with an EL device corresponds to each intersection of the gate signal lines and the source signal lines. A driving transistor is provided for each pixel to supply a current to the EL device. A first switch transistor is provided for each pixel on a current path through which the current is supplied to the EL device. A gate driver circuit is connected to the gate signal lines. The gate driver circuit is configured to turn the first switch transistor on and off to simultaneously generate band-shaped non-display regions and band-shaped display regions on the display screen and to move the non-display regions and the display regions relative to the display screen.

An array substrate, a fabricating method thereof and a display device, the fabricating method comprises forming a plurality of touch electrodes on a base substrate, a plurality of touch electrode leads for leading out signals of the touch electrodes and an array structure comprising a plurality of conducting structures. At least part of touch electrode leads and at least one of the conducting structures are disposed in a same layer and made from a same material. The fabricating method can reduce the amount of masks used in the fabricating process of the array substrate.

Even when a light shielding film is provided between a transistor and a substrate, a threshold voltage of the transistor can be prevented or suppressed from being shifted. A display device includes light shielding films provided between a substrate and a semiconductor layer of a transistor including a gate electrode and the semiconductor layer. The semiconductor layer includes a source region and a drain region. Both of the light shielding films overlap the semiconductor layer when seen in a plan view, and are spaced apart from each other in a direction.

As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.

According to one embodiment, a semiconductor device includes first and second gate electrodes, a semiconductor layer, an output electrode, and an insulating layer. The semiconductor layer includes first source and drain areas, a first channel area facing the first gate electrode, second source and drain areas, and a second channel area facing the second gate electrode. The output electrode outputs voltage produced in the first and second drain areas. In the semiconductor device, the first drain area is in contact with the second drain area. The insulating layer includes a hole portion communicating with one of the first and second drain areas. The output electrode is in contact with one of the first and second drain areas via the hole portion.