Embodiments of the disclosure disclose a transistor with floating gate electrode, a manufacturing method thereof, an application method thereof and a display driving circuit. The transistor with floating gate electrode includes a substrate (1), and a floating gate electrode (3), a source electrode (4), a drain electrode (5) and a control gate electrode (6) disposed on the substrate (1). The transistor with floating gate electrode further comprises a first insulating film (7) and a polysilicon film (8) that are sequentially disposed on the substrate (1), and a channel region (2) is formed in the polysilicon film (8) at a position corresponding to the floating gate electrode (3).

Embodiments of the present disclosure describe multi-threshold voltage devices and associated techniques and configurations. In one embodiment, an apparatus includes a semiconductor substrate, a channel body disposed on the semiconductor substrate, a first gate electrode having a first thickness coupled with the channel body and a second gate electrode having a second thickness coupled with the channel body, wherein the first thickness is greater than the second thickness. Other embodiments may be described and/or claimed.

A variable capacitor is formed from a pair of electrodes and a dielectric interposed between the electrodes over a substrate, and an external input is detected by changing capacitance of the variable capacitor by a physical or electrical force. Specifically, a variable capacitor and a sense amplifier are provided over the same substrate, and the sense amplifier reads the change of capacitance of the variable capacitor and transmits a signal in accordance with the input to a control circuit.

A semiconductor device includes a semiconductor pattern on a substrate along a first direction, a blocking pattern on a top surface of the semiconductor pattern, a first wire pattern on the blocking pattern along a second direction different from the first direction, the first wire including a first part and a second part on opposite sides of the first part, a gate electrode surrounding the first part of the first wire pattern, and a contact surrounding the second part of the first wire pattern, wherein a height of a bottom surface of the contact from a top surface of the substrate is different from a height of a bottom surface of the gate electrode from the top surface of the substrate.

Methods for fabricating semiconductor-metal-on-insulator (SMOI) structures include forming an acceptor wafer including an insulator material on a first semiconductor substrate, forming a donor wafer including a conductive material and an amorphous silicon material on a second semiconductor substrate, and bonding the amorphous silicon material of the donor wafer to the insulator material of the acceptor wafer. SMOI structures formed from such methods are also disclosed, as are semiconductor devices including such SMOI structures.

A graphene-based valley filter includes a bottom gate, a bilayer graphene and two top gates. The bilayer graphene is deposited on the bottom gate and includes scattering defects. The top gates are deposited on the bilayer graphene. The top gates define a channel in the bilayer graphene, and the scattering defects are located in the vicinity of the channel. A vertical electric field is formed to open a band gap and produce electronic energy subbands in the channel. A transverse in-plane electric field is formed to produce pseudospin splitting in the subbands of the bilayer graphene. The scattering defects are for producing scattering between two opposite energy valley states of the bilayer graphene, couples subband states of opposite pseudospins and opens a pseudogap at a crossing point of the two subbands. Electrons are passed through the channel to become valley polarized in the bilayer graphene.)

Solved is a problem of attenuation of output amplitude due to a threshold value of a TFT when manufacturing a circuit with TFTs of a single polarity. In a capacitor (105), a charge equivalent to a threshold value of a TFT (104) is stored. When a signal is inputted thereto, the threshold value stored in the capacitor (105) is added to a potential of the input signal. The thus obtained potential is applied to a gate electrode of a TFT (101). Therefore, it is possible to obtain the output having a normal amplitude from an output terminal (Out) without causing the amplitude attenuation in the TFT (101).

As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

A pixel of an OLED display is disclosed. A gate voltage of a driving transistor can be precisely adjusted using a second gate electrode that can supply DC power easily securing an operation range of an OLED. Further, by only adding one power line that can precisely adjust a gate voltage of a driving transistor to an OLED display, an operation range of the OLED can be easily secured and thus a drain current can be reduced without increasing a channel length of the driving transistor resulting in a narrower pixel area. According to various embodiments, the pixel can secure an operation range of the OLED by reducing a magnitude of a drain current by adjusting a gate voltage of a driving transistor.

An electroluminescent (EL) display apparatus and manufacturing method are provided. A display screen includes gate signal lines which are arranged to intersect source signal lines. A pixel corresponds to each intersection of the gate signal lines and the source signal lines. Each pixel includes: an EL device; a driving transistor to supply a current to the EL device; a first switch transistor through which the current is supplied by the driving transistor to the EL device; a second switch transistor provided to supply, to the driving transistor, an image signal supplied to a corresponding one of the source signal lines; a third switch transistor provided between a gate terminal and a drain terminal of the driving transistor; and a capacitor connected to the gate terminal of the driving transistor for holding the image signal. The third switch transistor has a multi-gate structure.