An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20 to approximately 80 from a horizontal plane based on the substrate.

A method for producing an optoelectronic component includes creating a first layer of a polymer material. The method also includes applying crystals to a surface of the first layer. The method also includes creating a second layer of a polymer material on the surface of the first layer. The crystals can be between the first and second layers.

A display may be provided with light sources. The light sources may include light-emitting diodes. The light sources may have packages formed from package bodies to which the light-emitting diodes are mounted. Layers such as quantum dot layers, light-scattering layers, spacer layers, and diffusion barrier layers may be formed over the package bodies and light-emitting diodes. Quantum dots of different colors may be stacked on top of each other. A getter may be incorporated into one or more of the layers to getter oxygen and water. Quantum dots may be formed from semiconductor layers that are doped with n-type and p-type dopant to adjust the locations of their conduction and valance bands and thereby enhanced quantum dot performance.

In various embodiments, lighting systems include an electrically insulating carrier having a plurality of conductive elements disposed thereon and a light-emitting array. The light-emitting array is disposed over the carrier and includes a plurality of light-emitting diodes (LEDs) that each has at least two electrical contacts electrically connected to conductive elements by a conductive adhesive.

A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

An optoelectronic semiconductor device comprising: a semiconductor system comprises an upper surface, an interfacial layer comprises a upper interfacial layer on the upper surface of the semiconductor system, and the upper interfacial layer comprises a first wavelength converting material; and a void region in the upper interfacial layer, and a material different from that of the upper interfacial layer fills in the void region.

A method for manufacturing a light emitting device includes preparing a light emitting element that includes a light transmissive substrate comprising a first main surface, a second main surface, and a side surface having a light transmitting part and a light absorbing part whose optical transmissivity is lower than that of the light transmitting part, and a semiconductor laminate that is provided to the first main surface of the light transmissive substrate, joining the light emitting element to an upper surface of a base body such that the base body is opposite to the side where the semiconductor laminate is provided, providing a support member that covers the side surface of the light emitting element and part of the base body, and removing the light absorbing part by thinning the light transmissive substrate from the second main surface side.

A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.