The invention relates to a light emitting diode, which comprises a substrate and a semiconductor epitaxy structure. The semiconductor epitaxial structure is disposed on the substrate. The semiconductor epitaxial structure comprises semiconductor composite layers and a plurality of current spreading layers which are disposed among the semiconductor composite layers. The doping concentrations of the upper and lower adjacent current spreading layers are alternately high and low.

A light-emitting diode and a white light-emitting device are provided. The light-emitting diode includes a p-type semiconductor layer, an n-type semiconductor layer, and a light-emitting stacked layer disposed therebetween. The light-emitting stacked layer includes alternately-stacked well layers and barrier layers. The light-emitting stacked layer includes one or more second, third, fourth, and fifth well layers that have different indium concentrations, such that a C2 indium concentration, a C3 indium concentration, a C4 indium concentration, and a C5 indium concentration are respectively defined, and a relationship of the indium concentrations is C5>C4>C3>C2. The light-emitting stacked layer includes an n-side proximate section, a middle section, and a p-side proximate section along a thickness direction. The third well layer is disposed in the middle section, and the third well layer is disposed between the two second well layers.

In an embodiment a method for manufacturing a semiconductor device include providing a growth substrate, depositing an n-doped first layer, depositing an active region on the n-doped first layer, depositing a second layer onto the active region, depositing magnesium (Mg) in the second layer and subsequently to depositing Mg, depositing zinc (Zn) in the second layer such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.

A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitride semiconductor layer.

A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.

A high-brightness light-emitting diode with surface microstructure and preparation and screening methods thereof are provided. The ratio of total roughened surface area of light transmission surface of a light emitting diode to vertically projected area is greater than 1.5, and the peak density of light transmission surface is not less than 0.3/um.sup.2. The higher the ratio of total roughened surface area of an epitaxial wafer to vertically projected area and the higher the number of peak over the critical height within a unit area, the more beneficial to improve light extraction efficiency of the epitaxial wafer. As a result, light extraction efficiency of the epitaxial wafer is greatly improved.

Disclosed are a light emitting device, a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer comprising a barrier layer which is disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and which has an un-doped area and a doped area with dopants.

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

A semiconductor light-emitting element is provided, including: a substrate, a first distributed Bragg reflector (DBR), an active layer, a second DBR, a first contact layer, a second contact layer, a first metal layer and a second metal layer. The first contact layer, the first DBR, the active layer, the second DBR and the second contact layer are stacked layer by layer in a thickness direction to form a columnar structure. The semiconductor light-emitting element further includes an insulating layer at least partially covered on an outer surface of the columnar structure, and the insulating layer defines an embedding groove open in the thickness direction. A connecting portion of the second metal layer is embedded within the embedding groove and connected with the second contact layer.

In an embodiment a growth structure for a radiation-emitting semiconductor component includes a semiconductor substrate containing a material based on arsenide compound semiconductors and a buffer structure arranged on the semiconductor substrate, wherein the buffer structure includes a buffer layer having at least one n-doped layer and wherein the n-doped layer contains oxygen, and a molar fraction of oxygen in the n-doped layer is between 10.sup.15 cm.sup.3 and 10.sup.19 cm.sup.3, inclusive.