Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly reflective structures for LED chips and related methods are disclosed. Reflective structures include arrangements of a first metal and a second metal within a metal reflective layer. The second metal may have a nonuniform distribution throughout a thickness of the metal reflective layer relative to the first metal. The first metal may promote increased reflectivity relative to the second metal, and the second metal may promote increased mechanical stability, increased adhesion, and reduced electromigration. An exemplary metal reflective layer includes increased concentrations of the second metal near interfaces between the metal reflective layer and other layers of the LED chip. The second metal may also form concentration gradients in directions away from the interfaces. Related methods include sequentially forming discrete layers of the first and second metals, followed by annealing to form the metal reflective layer.

An optoelectronic semiconductor component includes a semiconductor layer stack including a first semiconductor region, a second semiconductor region, and an active zone arranged between the first and second semiconductor regions. The second semiconductor region includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is arranged on a side of the first semiconductor layer facing away from the active zone. At least one depression extends from a first main surface of the semiconductor layer stack through the first semiconductor region and the active zone and ends at the second semiconductor layer. The first semiconductor layer includes a first compound semiconductor material and the second semiconductor layer includes a second compound semiconductor material. The first compound semiconductor material has a higher aluminum content than the second compound semiconductor material.

In one embodiment, the invention relates to an optoelectronic semiconductor chip comprising a semiconductor layer sequence. The semiconductor layer sequence has an n-conducting first layer region, a p-conducting second layer region and an active zone lying therebetween for generating radiation. The second layer region comprises a first subregion directly adjacent to the active zone, the first subregion being composed of p-conducting InvAl1-vP. The second layer region also comprises a second subregion directly adjacent to the first subregion, the second subregion having p-conducting Iny(GaxAl1-x)1-yP. The second layer region also comprises a third subregion as a p-contact layer directly adjacent to the second subregion.

A light-emitting diode and a manufacturing method thereof are provided. The light-emitting diode includes a substrate, a reflective mirror layer, an epitaxial composite layer and a plurality of conductive plugs. The reflective mirror layer is disposed on the substrate, and the epitaxial composite layer has a light-emitting layer and a quaternary compound semiconductor layer. The quaternary compound semiconductor layer directly contacts and electrically connects the reflective mirror layer. There is no dielectric material arranged between the quaternary compound semiconductor layer and the reflective mirror layer. The plurality of conductive plugs are alloyed and diffused within the quaternary compound semiconductor layer and do not protrude above the upper surface of the quaternary compound semiconductor layer, and form ohmic contact with the reflective mirror layer.

Described herein are optoelectronic devices and methods incorporating strain balanced direct bandgap Al.sub.xIn.sub.1-xP multiple quantum wells. The described devices are strain balanced in that the net strain between the ordered quantum wells and barriers is low, or in some cases zero. Advantageously, the described devices may be specifically designed for higher efficiency than existing Al.sub.xIn.sub.1-xP and may be grown on commercially available GaAs substrates.

A micro light-emitting diode structure includes a first-type semiconductor layer, a light-emitting layer, a second-type semiconductor layer, and a base layer stacked with each other. A width of the light-emitting layer is greater than that of the first-type semiconductor layer and that of the second-type semiconductor layer. A width of the base layer is at least greater than that of the second-type semiconductor layer. A manufacturing method of the micro light-emitting diode structure by mixing dry etching and wet etching. The manufacturing method not only reduces the time that the semiconductor layers are in contact with the etching solution in the wet etching process to increase the etching stability, but avoids the dangling bond effect on the sidewall caused by the dry etching. Therefore, a combination of the advantages of the two etchings further increases the external quantum efficiency.

A light emitting assembly includes a micro-LED, and a supporting substrate. The micro-LED includes a semiconductor structure and a first insulating dielectric layer. The semiconductor structure includes a first-type semiconductor laver; second-type semiconductor layer, and has a first mesa surface defined by the first-type semiconductor layer, and a second mesa surface defined by the second-type semiconductor layer. The first insulating dielectric layer covers the first and second mesa surfaces and has a first mesa covering portion that covers the first mesa surface, and two bridging arms projecting from the first mesa covering portion. The two bridging arms are located on two opposite sides of the semiconductor structure and connect with the supporting substrate so that the micro-LED is supported by the supporting substrate. The two bridging arms have a thickness which is less than a thickness of the first mesa covering portion on the first mesa surface.

In at least on embodiment, the optoelectronic semiconductor device comprises a semiconductor layer sequence which has an n-side stack, a p-side stack and an active region between the n-side stack and the p-side stack of a pn-junction, wherein the n-side stack comprises a second layer being doped with two different n-type dopants, a first one of the n-type dopants has an atomic number of at most 14 and a second one of the n-type dopants is S, Se or Te, the n-side stack further comprises a first layer being doped with the second one of the n-type dopants, and the second layer is located between the active region and the first layer.

A light emitting device according to an embodiment of the present disclosure includes a first conductivity type semiconductor region; a second conductivity type semiconductor region; and a light emitting region disposed between the first conductivity type semiconductor region and the second conductivity type semiconductor region, in which the second conductivity type semiconductor region includes a plurality of regions including Mg balls.