A PIN diode detector includes a substrate. The PIN diode detector further includes a plurality of PIN diode wells in a pixel region, wherein each of the plurality of PIN diode wells has a first dopant type. The PIN diode detector further includes a connecting ring well and a plurality of floating ring wells in a peripheral region, wherein the connecting ring well and plurality of floating ring wells have the first dopant type. The PIN diode detector further includes a field stop ring well surrounding the plurality of floating ring wells, wherein the field stop ring well has a second dopant type opposite the first dopant type. The PIN diode detector further includes a blanket doped region. The blanket doped region extends continuously through an entirety of the pixel region and an entirety of the peripheral region, and the blanket doped region has the second dopant type.

Image sensors may include a base substrate including a substrate layer, a buried insulation layer on the substrate layer, and a semiconductor layer on the buried insulation layer, a photo sensing device in the substrate layer, a buried impurity region spaced apart from the photo sensing device in an upper portion of the substrate layer, a transfer gate including a vertical gate extending through the semiconductor layer and the buried insulation layer and extending into an inner portion of the substrate layer, which is between the photo sensing device and the buried impurity region, a planar gate on the semiconductor layer, and a gate insulation layer between the substrate layer and the planar gate.

A first substrate having a plurality of photoelectric transducers formed on the first substrate, a second substrate having a pixel transistor for each of sets of two or more of the photoelectric transducers as a constituent unit, the pixel transistor being shared by the set and formed on the second substrate, and a second wiring which is connected to a first wiring formed on the second substrate via one contact, and is connected to a plurality of first elements, the first wiring leading to a second element shared by a plurality of first elements among a plurality of elements formed on the first substrate, each of the plurality of first elements being formed for each of the photoelectric transducers are included.

While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor by adjacent cells in sharing pixel units. Further, an efficient pixel layout is provided by reducing the number of routing wires.

An image sensor includes a plurality of photoelectric detectors, a plurality of color filters, and at least one pixel isolation region between adjacent ones of the photoelectric detectors. The color filters include a white color filter, and the color filters correspond to respective ones of the photoelectric detectors. The at least one pixel isolation region serves to physically and at least partially optically separate the photoelectric detectors from one another.

A sensor includes a plurality of image sensors, wherein each image sensor of the plurality of image sensors is configured to detect a first spectrum of light. The sensor further includes a depth sensing pixel bonded to each image sensor of the plurality of image sensors, wherein the depth sensing pixel is configured to detect a second spectrum of light different from the first spectrum.

Provided is an image sensor having improved performance. An image sensor in accordance with an embodiment of the present invention including a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each of the plurality of pixels may include: a photoelectric conversion element formed in a substrate; a transfer gate overlapping with a portion of the photoelectric conversion element and formed on the substrate; and a color filter over the photoelectric conversion element, wherein the plurality of pixels include two adjacent pixels which have the same color filter, and wherein one of the two adjacent pixels comprises an incident light control pattern.

A method of manufacturing a photoelectric conversion apparatus includes forming a first semiconductor region of a first conductivity type in a trench provided in a semiconductor substrate, forming an insulating member on the semiconductor substrate, and forming a second semiconductor region of a second conductivity type that forms a photoelectric conversion portion. The first semiconductor region is present between the second semiconductor region and the insulating member in a direction perpendicular to a depth direction of the semiconductor substrate.

A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.

An image sensor includes a semiconductor substrate having first and second faces. The sensor includes a plurality of pixel groups each including pixels, each pixel having a photoelectric converter and a wiring pattern, the converter including a region whose major carriers are the same with charges to be accumulated in the photoelectric converter. The sensor also includes a microlenses which are located so that one microlens is arranged for each pixel group. The wiring patterns are located at a side of the first face, and the plurality of microlenses are located at a side of the second face. Light-incidence faces of the regions of the photoelectric converters of each pixel group are arranged along the second face such that the light-incidence faces are apart from each other in a direction along the second face.