H10F77/30

Method for preparing solar cell, and solar cell

The method for preparing a solar cell includes providing a substrate having a first surface and a second surface opposite to the first surface; forming a doped layer and a first passivation layer stacked sequentially in a direction away from the substrate on the first surface; forming a second passivation layer on the second surface; forming multiple first grid line electrodes arranged at intervals on the surface of the first passivation layer away from the substrate, and forming multiple second grid line electrodes arranged at intervals on the surface of the second passivation layer away from the substrate; performing a laser processing on the multiple first grid line electrodes and an adjacent region of the multiple first grid line electrodes, and applying a reverse current between the multiple first grid line electrodes and the multiple second grid line electrodes.

Solar panel, electronic instrument, and electronic timepiece
12349471 · 2025-07-01 · ·

A solar panel is provided on a visible side of a display panel and includes a transmissive area, a power generator and an anti-reflector. The transmissive area transmits light. The power generator generates electric power from light. The anti-reflector is provided on a display-panel-facing surface of the power generator to prevent reflection of light on the power generator. The display-panel-facing surface of the power generator faces the display panel. The light, the reflection of which is prevented by the anti-reflector, is among light having passed through the transmissive area and been reflected by the display panel.

Solar cell and method for manufacturing the same

A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

Solar cell and manufacturing method thereof, photovoltaic module, and photovoltaic system

A solar cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The manufacturing method includes: providing a substrate; and dividing a second surface of the substrate into a first region, a second region, and an isolation region; sequentially stacking a first tunnel oxide layer, a first intrinsic amorphous silicon layer, a second tunnel oxide layer, and a second intrinsic amorphous silicon layer on the second surface of the substrate; removing the second intrinsic amorphous silicon layer and the second tunnel oxide layer located in the second region; doping the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer located in the first region with a first element, to obtain a first doped layer and a second doped layer respectively; doping the first intrinsic amorphous silicon layer located in the second region with a second element, to obtain a third doped layer; and forming an isolation structure in the isolation region, to isolate the first tunnel oxide layer located in the first region from the first tunnel oxide layer located in the second region and isolate the first doped layer and the second doped layer located in the first region from the third doped layer located in the second region.

Solar cell and photovoltaic module

A solar cell and a photovoltaic module. The solar cell includes substrate, tunnel oxide layer, doped conductive layer, intrinsic polycrystalline silicon layer, enhanced conductive portion, and first electrodes. The tunnel oxide layer covers the first surface of the substrate. The doped conductive layer covers one side of the tunnel oxide layer away from the substrate. The intrinsic polycrystalline silicon layer is formed on one side of the doped conductive layer away from the tunnel oxide layer. The enhanced conductive portion covers one side of the intrinsic polycrystalline silicon layer away from the doped conductive layer, and is at least partially connected to the doped conductive layer. First electrodes are formed on one side of the enhanced conductive portion away from the intrinsic polycrystalline silicon layer, and at least part of each first electrode is located in the enhanced conductive portion to be electrically connected to the doped conductive layer.

SOLAR CELL, METHOD FOR MANUFACTURING SOLAR CELL, AND PHOTOVOLTAIC MODULE
20250221090 · 2025-07-03 ·

A solar cell, a manufacturing method thereof, and a photovoltaic module are provided. The solar cell includes a substrate having electrode regions and non-electrode regions that are alternatingly arranged in a first direction, where the non-electrode regions include first regions and second regions; a dielectric layer formed over the electrode regions and the second regions and not formed over the first regions; a doped conductive layer formed over the dielectric layer; a passivation layer formed over the first regions and the doped conductive layer; and a plurality of electrodes.

Integrated filter optical package

An integrated filter optical package including an ambient light sensor that incorporates an infrared (IR) filter in an integrated circuit (IC) stacked-die configuration is provided. The integrated filter optical package incorporates an infrared (IR) coated glass layer to filter out or block IR light while allowing visible (ambient) light to pass through to a light sensitive die having a light sensor. The ambient light sensor detects an amount of visible light that passes through the IR coated glass layer and adjusts a brightness or intensity of a display screen on an electronic device accordingly so that the display screen is readable.

Integrated filter optical package

An integrated filter optical package including an ambient light sensor that incorporates an infrared (IR) filter in an integrated circuit (IC) stacked-die configuration is provided. The integrated filter optical package incorporates an infrared (IR) coated glass layer to filter out or block IR light while allowing visible (ambient) light to pass through to a light sensitive die having a light sensor. The ambient light sensor detects an amount of visible light that passes through the IR coated glass layer and adjusts a brightness or intensity of a display screen on an electronic device accordingly so that the display screen is readable.

Local patterning and metallization of semiconductor structures using a laser beam

Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.

Back-contact battery and manufacturing method thereof, and photovoltaic module

Provided are a back-contact battery and a manufacturing method thereof, and a photovoltaic module, which includes a silicon substrate with a front surface and a back surface; a first semiconductor layer with a second semiconductor opening region arranged back surface; and a second semiconductor layer. The back-contact battery further includes multiple insulating layers arranged at intervals along an X-axis direction of the back surface, wherein the insulating layers are arranged on the outer surface of the second semiconductor layer. In the X-axis direction, the insulating layer spans a side-surface edge of the second semiconductor opening region with both ends extending, respectively; the insulating layer has a span length W12 on the second semiconductor opening region, and the insulating layer has a span length W11 on the first semiconductor layer, satisfying a condition: W12:W11=0.1-10:1.