A solar cell, including: a substrate having a front side, rear side and plurality of edges extending between the front and rear sides; a conductive front-side layer on a front-side surface; an electrode on the front side electrically connected to the conductive front-side layer; a highly-doped rear-side layer on a surface of the rear side; a tunnel layer on the highly-doped rear-side layer; a conductive rear-side layer on the highly-doped rear-side layer and the tunnel layer; an electrode on the rear side electrically connected to the conductive rear-side layer; an insulation portion formed adjacent to the front-side surface and on the edges adjacent to the front-side surface. A rear-side layer assembly, including the rear-side layer, the tunnel layer and the conductive rear-side layer, is recessed in the insulation portion so that electrical contact between the highly-doped rear-side layer and the conductive front-side layer is structurally prevented.

In examples, a method comprises covering at least part of a semiconductor die having a light sensor with a mold compound, the mold compound including a cavity over the light sensor. The method further comprises depositing a solution into the cavity to form a light filter, and curing the solution to form a light filter in the cavity.

A bifacial solar cell includes a silicon substrate; an emitter layer; a plurality of first electrodes locally on the emitter layer; a first aluminum oxide layer on the emitter layer; a first silicon oxide layer between the first aluminum oxide layer and the emitter layer; a first anti-reflection layer on the first aluminum oxide layer; a back surface field layer on the silicon substrate; a second aluminum oxide layer on the silicon substrate; a second silicon oxide layer between the second aluminum oxide layer and the silicon substrate; a second anti-reflection layer on the second aluminum oxide layer; and a plurality of second electrodes respectively on the back surface field layers through the second anti-reflection layer, the second aluminum oxide layer and the second silicon oxide layer.

A solar cell having a P-type silicon substrate where one main surface is a light-receiving surface and another is a backside, a plurality of back surface electrodes formed on a part of the backside, an N-type layer in at least a part of the light-receiving surface, and contact areas in which the substrate contacts the electrodes. The P-type silicon substrate is a silicon substrate doped with gallium and has a resistivity of 2.5 .Math.cm or less; and a back surface electrode pitch P.sub.rm [mm] of contact areas in which the P-type silicon substrate is in contact with the back surface electrodes and the resistivity R.sub.sub [.Math.cm] of the substrate satisfy the relation represented by the following formula (1).
log(R.sub.sub)log(P.sub.rm)+1.0(1)

A semiconductor device with an image sensor and a method of fabricating the same are disclosed. The method includes depositing a dielectric layer on a substrate, forming a trench within the dielectric layer and the substrate, forming an epitaxial structure within the trench, and forming a barrier layer with first and second layer portions. The first layer portion is formed on a sidewall portion of the trench that is not covered by the epitaxial structure. The method further includes forming a capping layer on the epitaxial structure and adjacent to the barrier layer, selectively doping regions of the epitaxial structure and the capping layer, selectively forming a silicide layer on the doped regions, depositing an etch stop layer on the silicide layer, and forming conductive plugs on the silicide layer through the etch stop layer.

A method of coating an optical substrate with a transparent, electrically conductive coating includes depositing a semiconductor coating over a surface of an optical substrate, wherein the semiconductor coating has broadband optical transmittance. A doped semiconductor is applied in a pattern over the semiconductor coating. The doped semiconductor in the pattern is activated for electrical conductivity in the doped semiconductor.

A method of coating an optical substrate with a transparent, electrically conductive coating includes depositing a semiconductor coating over a surface of an optical substrate, wherein the semiconductor coating has broadband optical transmittance. A doped semiconductor is applied in a pattern over the semiconductor coating. The doped semiconductor in the pattern is activated for electrical conductivity in the doped semiconductor.

A surface composite film structure with longitudinal transmission cutoff and transverse transmission conduction, and a preparation method and application thereof are provided. The surface composite film structure includes a nano dielectric layer arranged on a surface of a silicon substrate, a silicide layer arranged on the nano dielectric layer and a polycrystalline silicon layer arranged on the silicide layer. A material of the nano dielectric layer is a hydrogenated silicon oxide film, a material of the silicide layer is a hydrogenated carbon nitride silicon film including phosphorus or boron, and a material of the polycrystalline silicon layer is a phosphorus-doped or boron-doped polycrystalline silicon film. The surface composite film structure can achieve an excellent passivation effect and has the characteristics of longitudinal non-conduction and transverse conduction, and the transverse sheet resistance is flexibly adjustable, meeting the performance requirements of new silicon-based semiconductor physical devices.

A modified tunnel oxide layer and a preparation method, a TOPCon structure and a preparation method, and a solar cell are provided. The modified tunnel oxide layer is SiO.sub.x subjected to plasma surface treatment, and a Si.sup.4+ content in the SiO.sub.x is greater than or equal to above 18%. The density of the interface state subjected to plasma surface treatment decreases, and compared with the silicon oxide layer prepared in the prior arts, boron has a low diffusion rate in the modified silicon oxide layer and hence the damaging effect of the boron on the tunnel oxide layer is reduced effectively, thereby improving the integrity of the silicon oxide layer and maintaining chemical passivation effect. The modified tunnel oxide layer significantly increases the performance indexes of the TOPCon structure.

A solar cell and a photovoltaic module. The solar cell includes a substrate having a first surface and a second surface arranged oppositely, the second surface including a first region, a second region, and an isolation region located between the first region and the second region; a first tunnel oxide layer, a first doped layer, a second tunnel oxide layer, and a second doped layer located in the first region and sequentially stacked in a direction away from the substrate; the first tunnel oxide layer and a third doped layer located in the second region and sequentially stacked in a direction away from the substrate; and an isolation structure located in the isolation region and configured to isolate the first tunnel oxide layer located in the first region from the first tunnel oxide layer located in the second region, the isolation structure further configured to isolate the first doped layer and the second doped layer located in the first region from the third doped layer located in the second region.